ANPEC APM2509NUBC-PB

APM2509NUB
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
25V/50A ,
RDS(ON)=7.5mΩ(typ.) @ VGS=10V
RDS(ON)=13mΩ(typ.) @ VGS=4.5V
•
•
•
•
2
3
G
D
S
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of TO-251
Applications
•
1
D
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
UB : TO-251
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
PB : Plastic Bag
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2509N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2509N UB :
APM2509N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
1
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APM2509NUB
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
30
A
TC=25°C
100
TC=100°C
65
TC=25°C
50*
TC=100°C
38
TC=25°C
50
TC=100°C
20
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
100
TA=100°C
65
TA=25°C
9.5
TA=100°C
4
TA=25°C
1.25
TA=100°C
0.25
100
A
A
W
°C/W
Note:
* Current limited by bond wire.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
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APM2509NUB
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2509NUB
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
b
Qrr
50
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Reverse Recovery Time
Reverse Recovery Charge
1
30
1.3
1.8
µA
2.5
V
±100
nA
VGS=10V, IDS=30A
7.5
9
VGS=4.5V, IDS=15A
13
18
ISD=10A, VGS=0V
0.9
1.1
ISD=10A, dISD/dt =100A/µs
mJ
V
TJ=85°C
VDS=VGS, IDS=250µA
Drain-Source On-state Resistance
25
VDS=20V, VGS=0V
Gate Threshold Voltage
Diode Characteristics
a
VSD
Diode Forward Voltage
b
trr
ID=15A, L=0.5mH
mΩ
V
17
ns
6
nC
1.8
Ω
b
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
345
245
17
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
1560
18
ns
41
16
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
17.5
VDS=15V, VGS=4.5V,
IDS=30A
5
26
nC
11
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
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APM2509NUB
Typical Characteristics
Drain Current
60
60
50
50
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
40
30
20
40
30
20
10
10
o
0
o
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
ID - Drain Current (A)
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
10ms
100ms
10
1s
DC
1
o
Tc=25 C
0.1
0.1
0
Tj - Junction Temperature (°C)
300
100
TC=25 C,VG=10V
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1E-3
1E-4
70
Mounted on minimum pad
o
RθJA :100 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
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APM2509NUB
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
22
100
VGS=4,5,6,7,8,9,10V
20
RDS(ON) - On - Resistance (mΩ)
90
ID - Drain Current (A)
80
70
3.5V
60
50
40
3V
30
20
2.5V
10
0.4
0.8
1.2
1.6
14
12
10
VGS=10V
8
6
2
2.0
0
20
40
60
80
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
100
1.6
18
IDS =250µA
ID= 30A
16
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
VGS=4.5V
16
4
0
0.0
14
12
10
8
6
4
18
0
1
2
3
4
5
6
7
8
9
1.0
0.8
0.6
0.4
0.2
-50 -25
10
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
1.2
5
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APM2509NUB
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
40
VGS = 10V
IDS = 30A
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 7.5mΩ
0.4
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.8
1.0
1.2
Capacitance
Gate Charge
VGS - Gate-source Voltage (V)
2500
2000
Ciss
1500
1000
Coss
500
1.4
10
VDS=15V
9
C - Capacitance (pF)
0.6
VSD - Source-Drain Voltage (V)
Frequency=1MHz
Crss
0
0.4
Tj - Junction Temperature (°C)
3000
0
0.2
ID = 30A
8
7
6
5
4
3
2
1
5
10
15
20
0
25
5
10
15
20
25
30
35
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
0
6
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APM2509NUB
Avalanche Test Circuit and Waveforms
V DS
tp
L
V DSX(SUS)
V DS
DUT
IAS
RG
V DD
V DD
IL
tp
EAS
0.01 Ω
t AV
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
90%
V GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
7
t d (off) t f
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APM2509NUB
Packaging Information
TO-251
A
b2
E1
E1
H
D
D1
C1
D1
E
C
b
A1
e1
Millimeters
Dim
A
A1
b
b2
C
C1
D
D1
E
E1
e1
H
Min.
2.20
1.02
0.50
5.20
0.40
0.40
5.40
5.30
6.35
4.40
4.50
12.90
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
Inches
Max.
2.40
1.27
0.88
5.46
0.60
0.60
6.20
-6.70
5.40
4.70
15.25
8
Min.
0.087
0.040
0.020
0.205
0.016
0.016
0.213
0.209
0.250
0.173
0.177
0.508
Max.
0.094
0.050
0.035
0.215
0.024
0.024
0.244
-0.264
0.213
0.185
0.600
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APM2509NUB
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
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APM2509NUB
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volum e m m
Volume mm
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2006
10
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