ANPEC APM2512NUC-TUL

APM2512NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
25V/40A,
RDS(ON)=9mΩ (typ.) @ VGS=10V
RDS(ON)=13mΩ (typ.) @ VGS=4.5V
•
•
•
•
Super High Dense Cell Design
Avalanche Rated
Top View of TO-252
Reliable and Rugged
D
Lead Free Available (RoHS Compliant)
Applications
•
G
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2512N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2512N U :
APM2512N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
1
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APM2512NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
14
A
TC=25°C
100
TC=100°C
65
TC=25°C
40
TC=100°C
25
TC=25°C
50
TC=100°C
20
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
100
TA=100°C
65
TA=25°C
10
TA=100°C
6
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
2
TA=25°C
100
TA=100°C
65
TA=25°C
7
TA=100°C
4
TA=25°C
1.6
TA=100°C
0.6
75
A
A
W
°C/W
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APM2512NU
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2512NU
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
ID=15A, VDD=20V
50
mJ
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
VGS=0V, IDS=250µA
V
VDS=20V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance
25
30
1.3
1.8
µA
2.5
V
±100
nA
VGS=10V, IDS=20A
9
12
VGS=4.5V, IDS=10A
13
20
ISD=10A, VGS=0V
0.9
1.3
VGS=0V,VDS=0V,F=1MHz
1.1
mΩ
Diode Characteristics
VSD
a
Diode Forward Voltage
V
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
1560
pF
345
245
10
18
6
11
33
47
10
14
33
43
ns
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Ω
VDS=15V, VGS=10V,
IDS=20A
4.6
nC
10
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
3
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APM2512NU
Typical Characteristics
Drain Current
Power Dissipation
60
50
40
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
30
20
10
10
o
o
0
TC=25 C,VG=10V
TC=25 C
0
20 40
0
60 80 100 120 140 160 180
60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
ID - Drain Current (A)
20 40
Tj - Junction Temperature (°C)
300
100
0
10ms
100ms
10
1s
DC
1
o
T =25 C
0.1 c
0.1
1
10
Copyright  ANPEC Electronics Corp.
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
70
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Rev. B.2 - Oct., 2005
2
4
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APM2512NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
100
22
VGS=6,7,8,9,10V
90
5V
RDS(ON) - On - Resistance (mΩ)
20
ID - Drain Current (A)
80
70
4.5V
60
50
4V
40
30
3.5V
20
3V
10
0
VGS=4.5V
16
14
12
VGS=10V
10
8
6
4
2.5V
0
1
2
3
4
2
5
0
20
40
60
80
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
100
1.6
100
IDS =250µA
90
Normalized Threshold Voltage
1.4
80
ID - Drain Current (A)
18
o
Tj=125 C
70
60
50
o
Tj=25 C
o
Tj=-55 C
40
30
20
1.2
1.0
0.8
0.6
0.4
10
0
0
1
2
3
4
5
0.2
-50 -25
6
Copyright  ANPEC Electronics Corp.
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Rev. B.2 - Oct., 2005
0
5
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APM2512NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
40
1.8
VGS = 10V
IDS = 20A
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 9mΩ
0.4
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.8
1.0
1.2
Capacitance
Gate Charge
VDS=15V
VGS - Gate-source Voltage (V)
2500
2000
Ciss
1500
1000
Coss
500
1.4
10
9
C - Capacitance (pF)
0.6
VSD - Source-Drain Voltage (V)
Frequency=1MHz
Crss
0
0.4
Tj - Junction Temperature (°C)
3000
0
0.2
ID = 20A
8
7
6
5
4
3
2
1
5
10
15
20
0
25
Copyright  ANPEC Electronics Corp.
5
10
15
20
25
30
35
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Rev. B.2 - Oct., 2005
0
6
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APM2512NU
Avalanche Test Circuit and Waveforms
V DS
tp
L
V DSX(SUS)
V DS
DUT
IA S
RG
V DD
V DD
IL
tp
EA S
0.01 Ω
tA V
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
90%
V GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
7
t d (off) t f
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APM2512NU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
D1
A1
E1
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
6.73
0.250
D1
E
5.2 REF
6.35
E1
0.205 REF
5.3 REF
0.265
0.209 REF
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
0.020
8
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APM2512NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
9
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APM2512NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
D1
10
Ko
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APM2512NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
1.5± 0.25 4.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
11
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