ANPEC APM2522NUC-TUL

APM2522NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
25V/30A,
RDS(ON)=15mΩ (typ.) @ VGS=10V
3
RDS(ON)=22mΩ (typ.) @ VGS=4.5V
•
•
•
•
Super High Dense Cell Design
1
2
Avalanche Rated
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Pin 3
D
Applications
•
Pin 1
G
Power Management in Desktop Computer or
DC/DC Converters
S
Pin 2
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2522N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2522N U :
APM2522N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
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APM2522NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
25
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
20
A
TC=25°C
100
TC=100°C
70
TC=25°C
30
TC=100°C
20
TC=25°C
50
TC=100°C
20
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
V
A
Mounted on Large Heat Sink
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
*
2.5
Thermal Resistance-Junction to Case
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
9
TA=100°C
6
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
W
°C/W
Mounted on PCB of Minimum Footprint
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
7
TA=100°C
4
TA=25°C
1.5
TA=100°C
0.5
75
A
°C/W
°C/W
Notes:
* Current limited by bond wire.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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APM2522NU
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
(TA = 25°C)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max.
25
1
30
1
1.5
µA
2.5
V
±100
nA
VGS=10V, IDS=20A
15
20
VGS=4.5V, IDS=10A
22
28
ISD=10A, VGS=0V
0.7
1.1
ISD=10A, dISD/dt =100A/µs
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Characteristics
a
VSD
Diode Forward Voltage
Typ.
VDS=20V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
Min.
mΩ
V
50
ns
3
nC
2
Ω
b
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
825
pF
125
85
13
24
19
35
31
57
5
10
17
24
ns
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=20A
2
nC
5
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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APM2522NU
Typical Characteristics
Drain Current
60
35
50
30
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
40
30
20
10
25
20
15
10
5
o
o
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
TC=25 C,VG=10V
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
2
100
1
n)
s(o
Rd
Normalized Effective Transient
ID - Drain Current (A)
0
it
Lim
1ms
10ms
10
100ms
1s
DC
1
Duty = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
Mounted on 1in pad
o
RθJA :50 C/W
o
TC=25 C
0.1
0.1
1
10
0.01
1E-4
70
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1E-3
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APM2522NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
35
60
VGS= 5,6,7,8,9,10V
4V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
50
3.5V
40
30
3V
20
10
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
25
VGS= 4.5V
20
VGS=10V
15
10
5
0
3.0
5
10
15
20
25
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
30
1.6
30
IDS =250µA
ID=20A
Normalized Threshold Vlotage
28
RDS(ON) - On - Resistance (mΩ)
30
26
24
22
20
18
16
14
1.4
1.2
1.0
0.8
0.6
0.4
12
10
1
2
3
4
5
6
7
8
9
0.2
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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APM2522NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
100
2.0
VGS = 10V
IDS = 20A
1.6
o
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
10
o
Tj=25 C
1
0.2
o
0.0
-50 -25
[email protected]=25 C: 15mΩ
0
25
50
75
0.3
0.0
100 125 150
0.8
1.2
1.6
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
2.0
10
1200
Frequency=1MHz
VDS=15V
9
VGS - Gate-source Voltage (V)
1000
C - Capacitance (pF)
0.4
Ciss
800
600
400
200
Coss
ID = 20A
8
7
6
5
4
3
2
1
Crss
0
0
0
5
10
15
20
25
30
3
6
9
12
15
18
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
6
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APM2522NU
Avalanche Test Circuit and Waveforms
VDS
L
tp
VDSX(SUS)
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Avalanche Test Circuit and Waveforms
VDS
RD
VDS
DUT
90%
VGS
RG
VDD
10%
tp
VGS
td(on) tr
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
7
td(off) tf
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APM2522NU
Packaging Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A1
Millimeters
Inches
Min.
Max.
Min.
Max.
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
A
E
6.35
6.73
0.250
0.265
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0.020
8
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APM2522NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate (183°C to Peak)
3°C/ second max.
Preheat temperature (125 ±25°C)
10°C /second max.
120 seconds max.
Temperature maintained above 183°C
60~150 seconds
Time within 5°C of actual peak temperature
10~20 seconds
Peak temperature range
220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C
Ramp-down rate
6°C /second max.
Time 25°C to peak temperature
6 minutes max.
60 seconds
10°C /second max.
Classification Reflow Profiles
pkg. thickness ≥ 2.5mm
and all bags
Convection 220 +5/-0°
C
pkg. thickness < 2.5mm and
3
pkg. volume ≥ 350mm
pkg. thickness < 2.5mm and pkg. volume
3
< 350mm
Convection 235 +5/-0°
C
VPR 215-219°
C
VPR 235 +5/-0°
C
IR/Convection 220 +5/-0°
C
IR/Convection 220 +5/-0°
C
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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APM2522NU
Reliability test program
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245°C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @125°C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
TST
MIL-STD 883D-1011.9
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
T2
W
P
E
330±3
100±2
13±0.5
2±0.5
16.4+0.3
-0.2
2.5±0.5
16+0.3
16-0.1
8±0.1
1.75±0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5±0.1
1.5±0.1
1.5±0.25
4.0±0.1
2.0±0.1
6.8±0.1
10.4±0.1
2.5±0.1
0.3±0.05
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
10
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APM2522NU
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
11
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