ANPEC APM2701CGC-TR

APM2701CG
Dual Enhancement Mode MOSFET (N and P-Channel)
Pin Description
Features
•
Top View
N-Channel
20V/3A,
•
G1
1
6
D1
RDS(ON)=50mΩ(typ.) @ VGS=4.5V
S2
2
5
S1
RDS(ON)=90mΩ(typ.) @ VGS=2.5V
G2
3
4
D2
P-Channel
-20V/-1.5A,
JSOT-6
Top View of JSOT-6
RDS(ON)=145mΩ(typ.) @ VGS=-4.5V
RDS(ON)=180mΩ(typ.) @ VGS=-2.5V
•
•
•
(6)D1
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(1)G1
Applications
•
(2)S2
Super High Dense Cell Design
(3)G2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
(5)S1
Systems
N-Channel MOSFET
(4)D2
P-Channel MOSFET
Ordering and Marking Information
Package Code
CG : JSOT-6
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2701
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2701CG :
M71X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
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APM2701CG
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
20
-20
VGSS
Gate-Source Voltage
±10
±10
3
-1.5
10
-6
1
-1
ID*
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
VGS=±4.5V
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
Thermal Resistance-Junction to Ambient
W
°C/W
150
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM2701CG
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250µA
N-Ch
20
VGS=0V, IDS=-250µA
P-Ch
-20
VDS=16V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
TJ=85°C
VDS=-16V, VGS=0V
TJ=85°C
VGS(th)
Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
V
1
N-Ch
30
-1
P-Ch
-30
VDS=VGS, IDS=250µA
N-Ch
0.45
0.6
1
VDS=VGS, IDS=-250µA
P-Ch
-0.45
-0.6
-1
VGS=±10V, VDS=0V
N-Ch
±100
P-Ch
±100
VGS=4.5V, IDS=3A
N-Ch
50
70
VGS=-4.5V, IDS=-1.5A
P-Ch
145
190
VGS=2.5V, IDS=1.7A
N-Ch
90
110
VGS=-2.5V, IDS=-1A
P-Ch
180
235
2
µA
V
nA
mΩ
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APM2701CG
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM2701CG
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics (Cont.)
VSD
a
Diode Forward Voltage
Dynamic Characteristics
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Tf
Turn-off Delay Time
Turn-off Fall Time
Gate Charge Characteristics
0.7
1.3
ISD=-0.5A, V GS =0V
P-Ch
-0.7
-1.3
N-Channel
VGS =0V,
VDS =10V,
Frequency=1.0MHz
N-Ch
270
P-Ch
300
N-Ch
70
P-Channel
VGS =0V,
VDS =-10V,
Frequency=1.0MHz
P-Ch
50
N-Ch
50
P-Ch
30
N-Ch
6
12
P-Ch
6
10
N-Ch
5
10
P-Ch
8
12
N-Ch
12
23
P-Ch
10
15
N-Ch
6
12
P-Ch
5
10
N-Ch
5
6.5
P-Ch
4
6
N-Ch
0.5
P-Ch
0.6
N-Ch
1.6
P-Ch
1
V
N-Channel
VDD=10V, R L=10Ω,
IDS=1A, VGEN =4.5V,
R G=6Ω
P-Channel
VDD=-10V, R L=10Ω,
IDS=-1A, VGEN =-4.5V,
R G=6Ω
pF
ns
b
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
N-Ch
b
C iss
td(OFF)
ISD=0.5A, V GS=0V
Gate-Drain Charge
N-Channel
VDS =10V, VGS =4.5V,
IDS=3A
P-Channel
VDS =-10V, V GS=-4.5V,
IDS=-1.5A
nC
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
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APM2701CG
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
3.5
1.0
3.0
ID - Drain Current (A)
Ptot - Power (W)
0.8
0.6
0.4
2.5
2.0
1.5
1.0
0.2
0.5
0.0
0
20
40
60
0.0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
50
10
0
it
im
)L
n
s(o
Rd
300µs
1
1ms
10ms
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
2
Single Pulse
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
1E-3
Mounted on 1in pad
o
RθJA : 150 C/W
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM2701CG
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
0.14
12
VGS= 3,4,5,6,7,8,9,10V
2.5V
VGS=2.5V
0.12
RDS(ON) - On - Resistance (Ω)
ID - Drain Current (A)
10
8
6
2V
4
2
0.10
0.08
0.06
VGS=4.5V
0.04
0.02
1.5V
0
0
1
2
3
4
0.00
5
6
8
Transfer Characteristics
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
9
8
ID - Drain Current (A)
4
ID - Drain Current (A)
1.8
7
6
5
4
o
2
2
VDS - Drain - Source Voltage (V)
10
3
0
Tj=125 C
o
Tj=25 C
o
Tj=-55 C
IDS =250µA
1.4
1.2
1.0
0.8
0.6
0.4
1
0.2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
-50 -25
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
10
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2701CG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
2.0
VGS = 4.5V
IDS = 3A
1.6
o
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
o
Tj=25 C
1
0.2
o
[email protected]=25 C: 50mΩ
0.0
-50 -25
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
Frequency=1MHz
VGS - Gate - source Voltage (V)
VDS= 10V
C - Capacitance (pF)
400
300
Ciss
200
100
Coss
Crss
0
0
4
8
12
16
3
2
1
0
20
0
1
2
3
4
5
6
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
IDS = 3A
4
6
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APM2701CG
Typical Characteristics
P-Channel
Drain Current
Power Dissipation
1.8
1.0
1.5
-ID - Drain Current (A)
Ptot - Power (W)
0.8
0.6
0.4
0.2
0.6
0.0
0
20
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
10
it
Lim
n)
o
(
s
Rd
300µs
1
1ms
10ms
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.1
0
Tj - Junction Temperature (°C)
50
-ID - Drain Current (A)
0.9
0.3
Normalized Transient Thermal Resistance
0.0
1.2
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
2
Single Pulse
0.01
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
1E-3
0.01
Mounted on 1in pad
o
RθJA : 150 C/W
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM2701CG
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
0.30
6
VGS= -3,-4,-5,-6,-7,-8,-9,-10V
RDS(ON) - On - Resistance (Ω)
5
-ID - Drain Current (A)
-2V
4
3
2
1
0
0.25
0.20
VGS= -2.5V
0.15
VGS= -4.5V
0.10
0.05
0.00
0
1
2
3
4
5
0
1
2
3
4
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.8
6
Tj=25 C
1.6
Normalized Threshold Voltage
5
o
Tj=-55 C
4
6
IDS = -250µA
o
-ID - Drain Current (A)
5
o
Tj=125 C
3
2
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.0
-50 -25
3.2
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
8
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APM2701CG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
6
1.8
VGS = -4.5V
IDS = -1.5A
o
1.4
Tj=150 C
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
1
o
Tj=25 C
0.2
o
[email protected]=25 C: 145mΩ
0.0
-50 -25
0
25
50
75
0.1
0.0
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
500
5
Frequency=1MHz
-VGS - Gate - source Voltage (V)
VDS= -10V
400
C - Capacitance (pF)
0.2
Ciss
300
200
100
Coss
IDS= -1.5A
4
3
2
1
Crss
0
0
0
4
8
12
16
20
1
2
3
4
5
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
0
9
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APM2701CG
Packaging Information
JSOT-6
b
C
Θ
L
e
E
E1
E2
Θ1
e
A1
A2
A
D
Dim
A
A1
A2
b
c
D
E
E1
E2
e
L
?
?1
Millimeters
Min.
Max.
0.935
1.10
0.01
0.10
0.925
1.00
0.25
0.40
0.10
0.20
2.95
3.10
2.50
3.00
2.30
2.50
2.65
3.05
0.95 BSC
0.30
0.60
0
8°
7° N0M.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
10
Inches
Min.
Max.
0.037
0.043
0.0004
0.004
0.036
0.039
0.010
0.016
0.004
0.008
0.116
0.122
0.098
0.118
0.091
0.098
0.104
0.120
0.037 BSC
0.012
0.024
0
8°
7° N0M.
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APM2701CG
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
11
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APM2701CG
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volum e m m
Volume mm
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
D1
12
Ko
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APM2701CG
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
178±1
SOT-23-6
B
C
J
72 ± 1.0 13.0 + 0.2 2.5 ± 0.15
F
D
3.5 ± 0.05 1.5 +0.1
D1
Po
1.5 +0.1
4.0 ± 0.1
T1
T2
P
E
1.5± 0.3
W
8.0+ 0.3
- 0.3
8.4 ± 2
4 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
1.4± 0.1
0.2±0.03
2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1
(mm)
Cover Tape Dimensions
Application
SOT-23-6
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
13
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