ANPEC APM3005NUC-TU

APM3005NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/50A,
RDS(ON)=4.5mΩ (typ.) @ VGS=10V
RDS(ON)=7mΩ (typ.) @ VGS=4.5V
•
•
•
•
G
Super High Dense Cell Design
D
S
Avalanche Rated
Top View of TO-252
Reliable and Rugged
D
Lead Free Available (RoHS Compliant)
Applications
G
•
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM3005N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM3005N U :
APM3005N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
1
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APM3005NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
16
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
TC=25°C
100
TC=100°C
75
TC=25°C
50*
TC=100°C
30
TC=25°C
50
TC=100°C
20
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
100
TA=100°C
75
TA=25°C
17
TA=100°C
10
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
100
TA=100°C
75
TA=25°C
14
TA=100°C
9
TA=25°C
1.6
TA=100°C
0.6
75
A
A
W
°C/W
Note:
* Current limited by bond wire.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
2
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APM3005NU
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM3005NU
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=11A, VDD=20V
30
mJ
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
30
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
V
VDS=24V, VGS=0V
1
30
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, V DS=0V
RDS(ON) a Drain-Source On-state Resistance
1
1.5
µA
2
V
±100
nA
VGS=10V, IDS=40A
4.5
5.5
VGS=4.5V, IDS=20A
7
8.5
ISD=20A, VGS=0V
0.7
1.3
Frequency=1.0MHz
1.5
mΩ
Diode Characteristics
VSD
a
Diode Forward Voltage
V
Dynamic Characteristicsb
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Ω
3300
pF
1180
790
13
20
9
15
43
66
14
28
34.2
45
ns
Gate Charge Characteristicsb
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=30A
nC
7
14.8
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
3
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APM3005NU
Typical Characteristics
Drain Current
60
60
50
50
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
40
30
20
10
40
30
20
10
o
TC=25 C,VG=10V
o
0
TC=25 C
0
20 40
0
60 80 100 120 140 160 180
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
300
100
ID - Drain Current (A)
0
it
im
)L
n
s(o
Rd
10ms
100ms
10
1s
DC
1
o
T =25 C
0.1 c
0.1
1
10
Copyright  ANPEC Electronics Corp.
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
2
1E-3
1E-4
80
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Rev. B.3 - Oct., 2005
2
4
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APM3005NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
100
12
VGS=3.5,4,5,6,7,8,9,10V
60
3V
40
2.5V
20
10
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
80
8
VGS=4.5V
6
VGS=10V
4
2
2V
0
0
2
4
6
8
0
10
40
60
Transfer Characteristics
Gate Threshold Voltage
Normalized Threshold Vlotage
1.5
60
o
Tj=125 C
40
o
Tj=-55 C
o
Tj=25 C
20
0
80
ID - Drain Current (A)
80
ID - Drain Current (A)
20
VDS - Drain-Source Voltage (V)
100
0
0
1
2
3
4
Copyright  ANPEC Electronics Corp.
1.2
0.9
0.6
0.3
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Rev. B.3 - Oct., 2005
IDS =250µA
0.0
-50 -25
5
100
5
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APM3005NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
100
VGS = 10V
IDS = 40A
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
Tj=150 C
10
o
Tj=25 C
1
0.25
o
[email protected]=25 C: 4.5mΩ
0.00
-50 -25
0
25
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
5000
Frequency=1MHz
VDS=15V
VGS - Gate-source Voltage (V)
9
C - Capacitance (pF)
4000
Ciss
3000
2000
Coss
1000
Crss
ID = 30A
8
7
6
5
4
3
2
1
0
0
5
10
15
20
0
25
Copyright  ANPEC Electronics Corp.
10
20
30
40
50
60
70
80
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Rev. B.3 - Oct., 2005
0
6
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APM3005NU
Avalanche Test Circuit and Waveforms
V DS
tp
L
V DSX(SUS)
V DS
DUT
IA S
RG
V DD
V DD
IL
tp
EA S
0.01 Ω
tA V
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
90%
V GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
7
t d (off) t f
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APM3005NU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
D1
A1
E1
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
6.73
0.250
D1
E
5.2 REF
6.35
E1
0.205 REF
5.3 REF
0.265
0.209 REF
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
0.020
8
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APM3005NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classificatin Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Large Body
Small Body
Average ramp-up rate
3°C/second max.
(TL to TP)
Preheat
- Temperature Min (Tsmin)
100°C
- Temperature Mix (Tsmax)
150°C
- Time (min to max)(ts)
60-120 seconds
Tsmax to TL
- Ramp-up Rate
Tsmax to TL
- Temperature(TL)
183°C
- Time (tL)
60-150 seconds
Peak Temperature(Tp)
225 +0/-5°C
240 +0/-5°C
Time within 5°C of actual Peak
10-30 seconds
10-30 seconds
Temperature(tp)
Ramp-down Rate
6°C/second max.
6 minutes max.
Time 25°C to Peak Temperature
Pb-Free Assembly
Large Body
Small Body
3°C/second max.
150°C
200°C
60-180 seconds
3°C/second max
217°C
60-150 seconds
245 +0/-5°C
250 +0/-5°C
10-30 seconds
20-40 seconds
6°C/second max.
8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
9
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APM3005NU
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
1.5± 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
10
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
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APM3005NU
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
11
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