ANPEC APM3011NUC-TUL

APM3011NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/40A ,
RDS(ON)=9mΩ(typ.) @ VGS=10V
RDS(ON)=13mΩ(typ.) @ VGS=4.5V
•
•
•
Avalanche Rated
•
Lead Free Available (RoHS Compliant)
G
Super High Dense Cell Design
D
S
Top View of TO-252
Reliable and Rugged
(2)
D1
Applications
•
(1)
G1
Power Management in Desktop Computer or
DC/DC Converters
S1
(3)
N-Channel MOSFET
Ordering and Marking Information
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
T R : T ape & R eel
L e a d F re e C o d e
L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e
A PM 3011N
L e a d F re e C o d e
H a n d lin g C o d e
Tem p. Range
P ackage C ode
A PM 3011N U :
A PM 3011N
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
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APM3011NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TJ
TSTG
Storage Temperature Range
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJC
Maximum Power Dissipation
TC=25°C
100
TC=100°C
65
TC=25°C
40
TC=100°C
22
TC=25°C
50
TC=100°C
20
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in pad area
IDP
ID
PD
RθJA
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
TA=25°C
100
TA=100°C
65
TA=25°C
10
TA=100°C
6
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
2
TA=25°C
100
TA=100°C
65
TA=25°C
7
TA=100°C
4
TA=25°C
1.5
TA=100°C
0.5
75
A
A
W
°C/W
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APM3011NU
Electrical Characteristics
Symbol
Parameter
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
(TA = 25°C unless otherwise noted)
Test Condition
Zero Gate Voltage Drain Current
IGSS
a
30
1
30
Gate Leakage Current
VGS=±20V, VDS=0V
1
Unit
mJ
V
VDS=24V, VGS=0V
VDS=VGS, IDS=250µA
Drain-Source On-state Resistance
Max.
100
Gate Threshold Voltage
Diode Characteristics
a
VSD
Diode Forward Voltage
b
IS
Typ.
TJ=85°C
VGS(th)
RDS(ON)
Min.
ID=20A, VDD=20V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
IDSS
APM3011NU
1.5
µA
2
V
±100
nA
VGS=10V, IDS=20A
9
11
VGS=4.5V, IDS=10A
13
17
ISD=10A , VGS=0V
0.9
1.3
V
20
A
Diode continuous forward current TC=25°C
mΩ
b
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1560
pF
345
245
10
20
15
25
35
50
15
20
17.8
24
ns
b
VDS=15V, VGS=4.5V,
IDS=20A
4.6
nC
10
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
3
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APM3011NU
Typical Characteristics
Drain Current
Power Dissipation
50
60
40
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
30
20
10
10
0
0
20
40
60
0
80 100 120 140 160 180
40
60
80 100 120 140 160 180
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
100
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
300
it
Lim
n)
o
(
s
Rd
10ms
100ms
10
1s
DC
1
o
Tc=25 C
0.1
0.1
0
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
70
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
2
4
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APM3011NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
40
24
VGS=5,6,7,8,9,10V
35
4V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
30
25
20
3.5V
15
10
3V
5
0
20
16
VGS=4.5V
12
VGS=10V
8
4
2.5V
0
2
4
6
8
0
10
0
5
10
15
20
25
35
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
40
1.6
40
IDS =250µA
Normalized Threshold Vlotage
36
32
ID - Drain Current (A)
30
28
o
Tj=125 C
24
o
20
Tj=-55 C
o
Tj=25 C
16
12
8
1.4
1.2
1.0
0.8
0.6
0.4
4
0
0
1
2
3
4
0.2
-50 -25
5
25
50
75
100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
0
5
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APM3011NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
40
1.8
VGS = 10V
IDS = 20A
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 9mΩ
0.4
-50 -25
0
25
50
75
0.1
0.0
100 125 150
0.8
1.0
1.2
Capacitance
Gate Charge
V
VGS - Gate-source Voltage (V)
2000
Ciss
1500
1000
500
Coss
Crss
5
1.4
10
9
C - Capacitance (pF)
0.6
VSD - Source-Drain Voltage (V)
Frequency=1MHz
0
0.4
Tj - Junction Temperature (°C)
2500
0
0.2
DS
=15 V
ID = 2 0 A
8
7
6
5
4
3
2
1
10
15
20
0
25
5
10
15
20
25
30
35
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
0
6
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APM3011NU
Avalanche Test Circuit and Waveforms
V DS
tp
L
V D SX( SU S)
V DS
DUT
IA S
RG
V DD
V DD
IL
tp
EA S
0.0 1 Ω
tAV
Switching Time Test Circuit and Waveforms
V DS
RD
V DS
DUT
V
90%
GS
RG
V DD
10%
V GS
tp
t d (on) t r
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
7
t d (off) t f
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APM3011NU
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
0. 0 20
8
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APM3011NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
9
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APM3011NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
D1
10
Ko
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APM3011NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
P1
1.5± 0.25 4.0 ± 0.1
2.0 ± 0.1
Ao
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
Bo
Ko
t
2.5± 0.1
0.3±0.05
6.8 ± 0.1 10.4± 0.1
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
11
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