ANPEC APM3195PDC-TUL

APM3195PD
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-30V/-2A,
RDS(ON)=230mΩ(Typ.) @ VGS=-10V
RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V
•
•
•
G
D
Super High Dense Cell Design
S
Top View of SOT-89
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(3)
S
Applications
•
•
(1)
G
Switching Regulators
Switching Converters
D
(2)
P-Channel MOSFET
Ordering and Marking Information
P ackage C ode
D : S O T -8 9
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : T ape & R eel
L e a d F re e C o d e
L : L e a d F r e e D e v ic e B la n k : O rig in a l D e v ic e
A PM 3195P
L e a d F re e C o d e
H a n d lin g C o d e
Tem p. Range
P ackage C ode
A PM 3195P D :
A PM 3195
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1
www.anpec.com.tw
APM3195PD
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
V
-2
ID*
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
VGS=-10V
A
-10
A
-1
150
TSTG
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA*
Unit
°C
-55 to 150
TA=25°C
1.47
TA=100°C
0.58
Thermal Resistance-Junction to Ambient
W
°C/W
85
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
Test Condition
VGS=0V, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
Max.
-30
-1
-30
-1
Unit
V
TJ=85°C
VDS=VGS, IDS=-250µA
Diode Forward Voltage
Min.
VDS=-24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM3195PD
-1.5
µA
-2
V
±100
nA
VGS=10V, IDS=-2A
230
300
VGS=4.5V, IDS=-1.4A
385
500
ISD=-0.5A, VGS=0V
-0.8
-1.3
8
10
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
VDS=-15V, VGS=-10V,
IDS=-2A
2
nC
1
2
www.anpec.com.tw
APM3195PD
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM3195PD
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Notes:
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-off Fall Time
Ω
11
510
pF
70
40
10
20
8
20
25
50
5
15
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
3
www.anpec.com.tw
APM3195PD
Typical Characteristics
Power Dissipation
Drain Current
1.6
2.5
1.4
2.0
-ID - Drain Current (A)
Ptot - Power (W)
1.2
1.0
0.8
0.6
0.4
1.5
1.0
0.5
0.2
o
0.0
o
TA=25 C
0
20
40
60
0.0
80 100 120 140 160
TA=25 C,VG=-10V
0
20
Tj - Junction Temperature (°C)
Normalized Transient Thermal Resistance
n)
L
(o
ds
R
-ID - Drain Current (A)
im
it
10
300µs
1ms
10ms
100ms
1s
DC
o
TA=25 C
0.01
0.1
1
10
2
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
2
0.01
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
80 100 120 140 160 180
Thermal Transient Impedance
30
0.1
60
Tj - Junction Temperature
Safe Operation Area
1
40
Mounted on 1in pad
o
RθJA :85 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
www.anpec.com.tw
APM3195PD
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
800
10
VGS= -6,-7,-8,-9,-10V
9
700
-ID - Drain Current (A)
8
RDS(ON) - On - Resistance (mΩ)
-5V
7
6
-4V
5
4
3
2
-3V
1
0
0
2
4
6
8
400
300
VGS=-10V
200
100
0
2
4
6
8
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
10
1.8
9
1.6
10
Normalized Threshold Voltage
IDS= -250µA
o
7
Tj=-55 C
6
o
Tj=125 C
o
Tj=25 C
5
4
3
2
1
0
VGS=-4.5V
500
0
10
8
-ID - Drain Current (A)
600
0
1
2
3
4
5
6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
7
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1.4
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
www.anpec.com.tw
APM3195PD
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
1.8
VGS = -10V
IDS = -2A
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=25 C
1
0.6
o
0.4
-50 -25
[email protected]=25 C: 230mΩ
0
25
50
75
0.1
-1.0 -0.5 0.0
100 125 150
Tj - Junction Temperature (°C)
0.5
1.5
2.0 2.5
3.0
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1000
10
Frequency=1MHz
900
VDS=-10V
-VGS - Gate-source Voltage (V)
9
800
C - Capacitance (pF)
1.0
700
600
Ciss
500
400
300
200
100
IDS= -2A
8
7
6
5
4
3
2
1
Coss
Crss
0
0
5
10
15
20
25
0
30
1
2
3
4
5
6
7
8
9
QG - Gate Charge (nC)
-VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
0
6
www.anpec.com.tw
APM3195PD
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
a
E
H
1
2
3
L
C
B1
B
e
e1
A
a
D im
A
B
B1
C
D
D1
e
e1
E
H
L
α
M illim eters
M in.
1.40
0.40
0.35
0.35
4.40
1.35
Inches
M ax.
1.60
0.56
0.48
0.44
4.60
1.83
M in.
0.055
0.016
0.014
0.014
0.173
0.053
1.50 B SC
3.00 B SC
2.29
3.75
0.80
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
M ax.
0.063
0.022
0.019
0.017
0.181
0.072
0.059 BSC
0.118 B SC
2.60
4.25
1.20
10°
7
0.090
0.148
0.031
0.102
0.167
0.047
10°
www.anpec.com.tw
APM3195PD
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
8
www.anpec.com.tw
APM3195PD
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
D1
9
Ko
www.anpec.com.tw
APM3195PD
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
B
178 ±1
70 ± 2
F
D
D1
5.5 ± 0.05
1.5± 0.1
1.5± 0.1
SOT-89
C
J
T1
T2
14 ± 2
1.3 ± 0.3
Po
P1
Ao
W
12 + 0.3
12 - 0.1
Bo
4.0 ± 0.1
2.0 ± 0.1
4.8 ± 0.1
4.5± 0.1
13.5 ± 0.15 3 ± 0.15
P
E
8 ± 0.1
1.75± 0.1
Ko
t
1.80± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOT-89
12
9.3
1000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
10
www.anpec.com.tw