ANPEC APM4435KC-TU

APM4435K
P-Channel Enhancement Mode MOSFET
Pin Description
Features
•
-30V/-8A ,
RDS(ON)=16mΩ(typ.) @ VGS=-10V
RDS(ON)=24mΩ(typ.) @ VGS=-4.5V
•
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Top View of SOP − 8
SOP-8 Package
(1, 2, 3)
S S S
Lead Free Available (RoHS Compliant)
Applications
(4) G
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
DD DD
(5, 6, 7, 8)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4435
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4435 K :
APM4435
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
1
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APM4435K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
ID*
Continuous Drain Current
IDM*
IS*
Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Unit
V
-8
VGS=-10V
A
-30
A
-3
150
°C
-55 to 150
TA=25°C
TA=100°C
Thermal Resistance-Junction to Ambient
2
0.8
W
62.5
°C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=-250µA
Typ.
Gate Leakage Current
VGS=±25V, VDS=0V
Max.
-30
-1
-30
-1
-1.5
µA
-2
V
±100
nA
VGS=-10V, IDS=-8A
16
20
VGS=-4.5V, IDS=-5A
24
30
-0.8
-1.3
ISD=-3A, VGS=0V
Unit
V
TA=25°C
VDS=VGS, IDS=-250µA
Diode Forward Voltage
Min.
VDS=-24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM4435K
mΩ
V
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω,
Turn-off Fall Time
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
2
Ω
10
3200
pF
560
250
16
30
17
32
75
136
31
57
ns
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APM4435K
Electrical Characteristics (Cont.)
Symbol
Parameter
Gate Charge Characteristics
Qg
Total Gate Charge
(TA = 25°C unless otherwise noted)
Test Condition
APM4435K
Min.
Typ.
Max.
48
60
Unit
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-8A
10
nC
9
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
3
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APM4435K
Typical Characteristics
Drain Current
2.5
10
2.0
8
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
6
4
2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
1ms
10ms
1
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=-10V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4435K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
40
30
VGS= -4, -5, -6, -7, -8, -9, -10V
35
RDS(ON) - On - Resistance (mΩ)
-ID - Drain Current (A)
25
20
VGS= -3V
15
10
5
0
0
2
4
6
8
30
VGS= -4.5V
25
20
VGS= -10V
15
10
5
0
10
0
5
10
15
20
25
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
2.0
30
30
IDS = -250µA
1.8
Normalized Threshold Voltage
-ID - Drain Current (A)
25
20
15
o
Tj=125 C
10
o
Tj=-55 C
o
Tj=25 C
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
0.0
-50 -25
5
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM4435K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
2.00
VGS = -10V
IDS = -8A
10
o
Tj=150 C
1.50
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
Tj=25 C
1
0.25
o
0.00
-50 -25
[email protected]=25 C: 16mΩ
0
25
50
0.3
1.2
1.5
Capacitance
Gate Charge
10
Frequency=1MHz
4000
8
3500
-VGS - Gate-source Voltage (V)
VD= -15V
9 I = -8A
D
Ciss
3000
2500
2000
1500
1000
Coss
500
Crss
0
0.9
-VSD - Source - Drain Voltage (V)
4500
0
0.6
Tj - Junction Temperature (°C)
5000
C - Capacitance (pF)
0.1
0.0
75 100 125 150
7
6
5
4
3
2
1
0
5
10
15
20
25
30
5
10 15 20 25 30 35 40 45 50
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
0
6
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APM4435K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Millimeters
Inches
A
Min.
1.35
Max.
1.75
Min.
0.053
Max.
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
φ 1
8°
8°
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
7
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APM4435K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
8
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APM4435K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volum e m m
Volume mm
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
D1
9
Ko
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APM4435K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Jun., 2006
10
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