ANPEC APM4538KC-TU

APM4538K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Pin Description
Features
•
N-Channel
D1
D1
36V/5A,
RDS(ON) =50mΩ(typ.) @ VGS = 10V
RDS(ON) =60mΩ(typ.) @ VGS = 4.5V
•
S1
G1
S2
G2
P-Channel
-36V/-4A,
RDS(ON) =60mΩ(typ.) @ VGS =-10V
RDS(ON) =80mΩ(typ.) @ VGS =-4.5V
•
•
•
Top View of SOP − 8
(8)
D1
Super High Dense Cell Design
(3)
S2
(7)
D1
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(4)
G2
(2)
G1
Applications
•
D2
D2
Power Management in Notebook Computer,
S1
(1)
Portable Equipment and Battery Powered
N-Channel MOSFET
Systems
D2
(5)
D2
(6)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4538
Lead Free Code
Handling Code
Tem p. Range
Package Code
APM4538 K :
APM4538
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
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APM4538K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
36
-36
VGSS
Gate-Source Voltage
±16
±16
5
-4
20
-16
1.7
-1.7
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
VGS=±10V
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4538K
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250µA
N-Ch
36
VGS=0V, IDS=-250µA
P-Ch
-36
VDS=30V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
V
1
N-Ch
30
TJ=85°C
VDS=-30V, VGS=0V
-1
P-Ch
-30
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
VDS=VGS, IDS=250µA
N-Ch
0.7
1.1
1.5
VDS=VGS, IDS=-250µA
P-Ch
-1
-1.5
-2
VGS=±16V, VDS=0V
N-Ch
±100
P-Ch
±100
VGS=10V, IDS=5A
N-Ch
50
65
VGS=-10V, IDS=-4A
P-Ch
60
80
VGS=4.5V, IDS=4A
N-Ch
60
80
VGS=-4.5V, IDS=-3A
P-Ch
80
100
2
µA
V
nA
mΩ
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APM4538K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4538K
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD
a
Diode Forward Voltage
Dynamic Characteristics
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Tf
N-Ch
0.8
1.3
ISD=-1.7A, VGS=0V
P-Ch
-0.8
-1.3
N-Ch
2.8
P-Ch
11
N-Channel
VGS=0V,
VDS=25V,
Frequency=1.0MHz
N-Ch
450
P-Ch
770
N-Ch
65
P-Channel
VGS=0V,
VDS=-25V,
P-Ch
120
N-Ch
25
P-Ch
80
N-Ch
10
15
P-Ch
10
20
N-Ch
8
20
P-Ch
15
30
N-Ch
20
28
P-Ch
25
50
N-Ch
5
15
P-Ch
15
30
N-Channel
VDS=15V, VGS=10V,
IDS=5A
N-Ch
15
21
P-Ch
26
35
N-Ch
4.5
P-Channel
VDS=-15V, VGS=-10V,
IDS=-4A
P-Ch
5.1
N-Ch
2.1
P-Ch
3.3
V
b
RG
td(OFF)
ISD=1.7A, VGS=0V
VGS=0V,VDS=0V,F=1MHz
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Delay Time
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Ω
pF
ns
b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
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APM4538K
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
2.5
6
5
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
60
10
n)
L
im
it
300µs
Rd
s(
o
ID - Drain Current (A)
TA=25 C,VG=10V
1ms
1
10ms
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4538K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
80
20
VGS= 4, 5, 6, 7, 8, 9, 10V
75
RDS(ON) - On - Resistance (mΩ)
18
ID - Drain Current (A)
16
14
12
3V
10
8
6
4
VGS=4.5V
65
60
55
VGS=10V
50
45
40
35
2
2V
0
70
0
2
4
6
8
30
10
0
4
8
12
16
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.6
20
IDS=250µΑ
Normalized Threshold Voltage
18
ID - Drain Current (A)
16
14
12
10
o
Tj=125 C
8
6
o
o
Tj=25 C
4
Tj=-55 C
1.4
1.2
1.0
0.8
0.6
0.4
2
0
0
1
2
3
4
0.2
-50 -25
5
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM4538K
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
20
VGS = 10V
IDS = 5A
10
1.6
IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
o
Tj=150 C
o
Tj=25 C
1
0.4
o
0.2
-50 -25
[email protected]=25 C: 50mΩ
0
25
50
75
0.1
0.0
100 125 150
0.8 1.0
1.2
1.4
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.6
10
VDS=15V
Frequency=1MHz
9
IDS=5A
500
VGS - Gate - source Voltage (V)
600
C - Capacitance (pF)
0.6
Tj - Junction Temperature (°C)
700
Ciss
400
300
200
100
Coss
Crss
0
0.2 0.4
0
5
10
15
20
25
7
6
5
4
3
2
1
0
30
0
3
6
9
12
15
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
8
6
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APM4538K
Typical Characteristics (Cont.)
P-Channel
Drain Current
2.5
5
2.0
4
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
3
2
1
o
0.0
o
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
im
it
10
s(
on
)L
1ms
Rd
-ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
50
10ms
1
100ms
1s
0.1
DC
o
0.01
TA=25 C,VG=-10V
TA=25 C
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM4538K
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
16
120
VGS= -4,-5,-6,-7,-8,-9,-10V
110
RDS(ON) - On - Resistance (mΩ)
14
-ID - Drain Current (A)
12
10
8
-3V
6
4
-2V
2
0
100
90
VGS= -4.5V
80
70
VGS= -10V
60
50
40
30
0
1
2
3
4
5
6
7
20
8
0
2
4
6
8
10
12
14
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
16
16
1.6
IDS= -250µΑ
14
Normalized Threshold Voltage
1.4
-ID - Drain Current (A)
12
10
8
o
Tj=125 C
6
o
Tj=-55 C
o
Tj=25 C
4
2
0
0
1
2
3
4
1.0
0.8
0.6
0.4
0.2
-50 -25
5
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1.2
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
8
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APM4538K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
20
VGS = -10V
IDS = -4A
10
o
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=150 C
o
Tj=25 C
1
0.6
o
0.4
-50 -25
[email protected]=25 C: 60mΩ
0
25
50
75
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
1200
Frequency=1MHz
VDS= -15V
-VGS - Gate - source Voltage (V)
C - Capacitance (pF)
1000
Ciss
800
600
400
200
Coss
IDS= -4A
8
6
4
2
Crss
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0
9
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APM4538K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1. 27B S C
0. 50B S C
8°
8°
10
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APM4538K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
11
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APM4538K
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
D1
12
Ko
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APM4538K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
Carrier Width
12
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
P
8± 0.1
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
13
www.anpec.com.tw