ANPEC APM4804KC-TR

APM4804K
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/8A,
D
RDS(ON) = 17mΩ(typ.) @ VGS = 10V
RDS(ON) = 22mΩ(typ.) @ VGS = 4.5V
•
•
•
•
D
D
D
S
S
Super High Density Cell Design
S
G
Reliable and Rugged
SOP − 8
SOP-8 Package
DD D D
Lead Free Available (RoHS Compliant)
Applications
G
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S S S
N-Channel MOSFET
Ordering and Marking Information
Package Code
K : SO P-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4804
Lead Free Code
Handling Code
Tem p. Range
Package Code
APM4804 K :
APM4804
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
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APM4804K
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±16
ID*
Continue Drain Current
IDM*
IS*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Unit
V
8
VGS=10V
A
30
A
4
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±16V, VDS=0V
Dynamic Characteristics
Typ.
Max.
30
1
30
0.6
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Forward Voltage
Min.
VDS=24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM4804K
1
µA
1.5
V
±100
nA
VGS=10V, IDS=8A
17
22
VGS=4.5V, IDS=5.6A
22
28
ISD=4A, VGS=0V
0.8
1.3
mΩ
V
b
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
713
VGS=0V,
VDS=15V,
Frequency=1.0MHz
142
VGS=0V, VDS=0V, f=1MHz
1.5
2
pF
120
Ω
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APM4804K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
Dynamic Characteristics b
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
Min.
Typ.
Max.
3
6
17
32
24
44
16
30
15.7
20
Unit
ns
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
APM4804K
VDS=15V, VGS=10V,
IDS=8A
1.9
nC
2.2
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
3
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APM4804K
Typical Characteristics
Power Dissipation
o
TA=25 C
Drain Current
10
2.5
8
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
6
4
2
0.5
o
TA=25 C, VG=10V
o
0.0
TA=25 C
0
20
0
40
60
80
100 120 140 160
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
it
im
)L
on
Rd
s(
10
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
300µs
1ms
1
10ms
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4804K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
30
30
VGS= 3,4,5,6,7,8,9,10V
27
RDS(ON) - On - Resistance (mΩ)
28
ID - Drain Current (A)
24
21
2.5V
18
15
12
9
2V
6
3
26
24
VGS=4.5V
22
20
18
VGS=10V
16
14
1.5V
0
0
2
4
6
8
12
10
0
4
8
12
16
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.4
30
Normalized Threshold Voltage
IDS=250µA
ID - Drain Current (A)
25
20
15
10
o
Tj=125 C
5
o
0.5
1.0
1.0
0.8
0.6
o
Tj=25 C
0
0.0
1.2
Tj=-55 C
1.5
2.0
2.5
3.0
0.4
-50 -25
3.5
25
50
75
100 125 150
Tj - Junction Temperature (°C)
VGS - Gate-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
0
5
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APM4804K
Typical Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
30
1.8
VGS = 10V
IDS = 8A
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
0.6
o
0.4
-50 -25
[email protected]=25 C: 17mΩ
0
25
50
75
0.1
0.0
100 125 150
0.2
0.4
1.0
1.2
1.4
Gate Charge
Capacitance
1400
10
Frequency=1MHz
VDS=15V
VGS - Gate - source Voltage (V)
1200
C - Capacitance (pF)
0.8
VSD - Source-Drain Voltage (V)
Tj - Junction Temperature (°C)
1000
800
Ciss
600
400
Coss
200
0.6
IDS=8A
8
6
4
2
Crss
0
0
5
10
15
20
25
0
30
VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
0
2
4
6
8
10
12
14
16
QG - Gate Charge (nC)
6
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APM4804K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
1. 27B S C
0. 50B S C
8°
8°
φ 1
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
7
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APM4804K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
8
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APM4804K
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
D1
9
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APM4804K
Carrier Tape(Cont.)
T2
J
C
A
B
T1
Application
SOP-8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
2.1± 0.1
.3±0.013
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
10
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