ANPEC APM4953KC-TRL

APM4953K
Dual P-Channel Enhancement Mode MOSFET
Pin Description
Features
•
-30V/-4.9A ,
D1
D1
RDS(ON)=53mΩ(typ.) @ VGS=-10V
RDS(ON)=80mΩ(typ.) @ VGS=-4.5V
•
•
•
•
D2
D2
S1
G1
S2
G2
Super High Dense Cell Design
Reliable and Rugged
Top View of SOP − 8
SOP-8 Package
Lead Free Available (RoHS Compliant)
(1)
S1
(3)
S2
Applications
•
(2)
G1
(4)
G2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D1
(7)
D1
(8)
D2
(5)
D2
(6)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4953
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4953 K :
APM4953
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
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APM4953K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
V
-4.9
VGS=-10V
A
-20
A
-2
150
TSTG
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA*
Unit
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
Max.
-30
-1
-30
-1
-1.5
µA
-2
V
±100
nA
VGS=-10V, IDS=-4.9A
53
60
VGS=-4.5V, IDS=-3.6A
80
95
-0.7
-1.3
22.6
30
ISD=-1.7A, VGS=0V
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Forward Voltage
Min.
VDS=-24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM4953K
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
VDS=-15V, VGS=-10V,
IDS=-4.9A
4.7
nC
2
2
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APM4953K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM4953K
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-off Fall Time
Ω
11
1260
pF
400
220
10
18
15
20
22
38
15
25
ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
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APM4953K
Typical Characteristics
Drain Current
Power Dissipation
2.5
6.0
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
4.5
3.0
1.5
0.5
o
TA=25 C,VG=-10V
o
0.0
TA=25 C
0
20
40
60
0.0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
it
im
300µs
s(
on
)L
10
Rd
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
1ms
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4953K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
120
VGS= -5, -6, -7, -8, -9, -10V
18
RDS(ON) - On - Resistance (mΩ)
-4V
16
-ID - Drain Current (A)
110
14
12
10
8
-3V
6
4
-2V
1
2
3
4
5
6
7
80
70
60
VGS= -10V
50
40
8
0
2
4
6
8
10 12 14 16 18 20
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.8
18
IDS = -250µA
Normalized Threshold Vlotage
1.6
16
-ID - Drain Current (A)
90
20
0
20
14
12
10
o
Tj=125 C
8
6
o
Tj=-55 C
o
Tj=25 C
4
1.4
1.2
1.0
0.8
0.6
0.4
2
0
VGS= -4.5V
30
2
0
100
0
1
2
3
4
5
0.2
-50 -25
6
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM4953K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.00
VGS = -10V
IDS = -4.9A
10
o
Tj=150 C
1.50
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
Tj=25 C
1
0.25
o
0.00
-50 -25
[email protected]=25 C: 53mΩ
0
25
50
75
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
100 125 150
Tj - Junction Temperature (°C)
-VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
3000
Frequency=1MHz
VD= -15V
ID= -4.9A
-VGS - Gate-source Voltage (V)
C - Capacitance (pF)
2500
2000
1500
Ciss
1000
Coss
500
0
Crss
0
5
10
15
20
25
6
4
2
0
30
0
5
10
15
20
25
QG - Gate Charge (nC)
-VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
8
6
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APM4953K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1. 27B S C
0. 50B S C
8°
8°
7
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APM4953K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
8
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APM4953K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
D1
9
Ko
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APM4953K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
Carrier Width
12
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
P
8± 0.1
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
10
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