ANPEC APM7313KC-TU

APM7313K
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
30V/6A,
RDS(ON) =21mΩ(typ.) @ VGS = 10V
RDS(ON) =27mΩ(typ.) @ VGS = 4.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Top View of SOP − 8
Lead Free Available (RoHS Compliant)
(8)
D1
Applications
•
(7)
D1
(6)
D2
(5)
D2
Power Management in Notebook Computer,
(2)
G1
Portable Equipment and Battery Powered
(4)
G2
Systems
S1
(1)
S2
(3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM7313
Lead Free Code
Handling Code
Temp. Range
Package Code
APM7313 K :
APM7313
XXXXX
XXXXX - Date Code
No te : ANPEC le ad -free produ cts con tai n m ol din g com pou nd s/d ie attach material s and 10 0% ma tte i n p la te
te rmin atio n fi nish ; wh ich are full y compl iant with Ro HS and compa tibl e wi th both SnPb an d le ad-free sold ieri ng
op era tio ns. AN PEC le ad-free produ cts me et or exceed th e l ead -free req uireme nts of IPC /JEDEC J STD -02 0C
fo r MSL classi ficati on at lea d-fre e p eak re flo w temp era ture.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
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Rev. B.3 - Nov., 2005
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APM7313K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Continuous Drain Current
IDM*
I S*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Unit
V
6
VGS=10V
A
24
3
A
150
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Thermal Resistance-Junction to Ambient
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
W
62.5
°C/W
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM7313K
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
R DS(ON)
VSD
a
a
VGS=0V, I DS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
1
T A=25°C
VDS=VGS, IDS=250µA
Diode Forward Voltage
V
VDS=20V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
30
30
1
1.5
µA
2
V
±100
nA
VGS=10V, ID S=6A
21
28
VGS=4.5V, I DS=2A
27
42
ISD=2A, VGS=0V
0.7
1.3
19
25
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
C opyright  ANPEC Electronics C orp.
Rev. B.3 - Nov., 2005
VDS=15V, VGS=10V,
IDS=6A
1.6
nC
3.6
2
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APM7313K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM7313K
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VD S=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD =15V, RL=15Ω,
IDS=1A, VGEN=10V,
R G=6Ω
Turn-off Fall Time
Ω
2.1
835
pF
150
105
7
13
8
15
28
40
6
9
ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
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APM7313K
Typical Characteristics
Power Dissipation
Drain Curre nt
2.5
8
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
6
4
2
0.5
o
0.0
o
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Lim
it
10
1ms
Rd
s(o
n)
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10ms
1
100ms
1s
0.1
DC
o
T A=25 C
0.01
0.01
TA=25 C,VG=10V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
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Rev. B.3 - Nov., 2005
2
Mounted on 1in pad
o
Rθ JA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM7313K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
30
40
VGS= 4, 5, 6, 7, 8, 9, 10V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
36
3.5V
25
20
15
3V
10
5
2.5V
VGS= 4.5V
32
28
24
VGS= 10V
20
16
12
0
0
1
2
3
4
5
0
4
VDS - Drain-Sourc e Voltage (V)
1.75
Normalized Threshold Voltage
25
20
15
o
Tj =125 C
10
o
Tj=-55 C
o
Tj =25 C
16
20
24
Gate Threshold Voltage
30
ID - Drain Current (A)
12
ID - Drain Current (A)
Transfer Characteristics
5
0
8
IDS= 250µΑ
1.50
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
0.00
-50 -25
5
VGS - Gate - Source Voltage (V)
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Rev. B.3 - Nov., 2005
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM7313K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
1.6
IDS = 6A
1.4
10
IS - Source Current (A)
Normalized On Resistance
V GS = 10V
1.2
1.0
0.8
o
Tj=125 C
o
Tj=25 C
1
0.6
o
0.4
-50
[email protected] =25 C: 21m Ω
-25
0
25
50
75
0.1
0.0
100 125 150
Tj - Junction Temperature (°C)
0.2
0.4
0.8
1.0
1.2
1.4
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1400
10
Frequency=1MHz
VDS= 15V
ID= 6A
VGS - Gate - source Voltage (V)
1200
C - Capacitance (pF)
0.6
1000
Ciss
800
600
400
Coss
200
8
6
4
2
Crss
0
0
0
5
10
15
20
25
30
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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APM7313K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JE DEC Registrat ion MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
A1
1.35
0.10
1.75
0.25
0.053
0.004
0.069
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
φ1
8°
8°
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APM7313K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Ramp-up
Temperature
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
3°C/second max.
3°C/second max.
(TL to T P)
Preheat
100°C
150°C
- Temperature Min (Tsmin)
°C
150
200°C
- Temperature Max (Tsmax)
60-120
seconds
60-180
seconds
- Time (min to max) (ts)
Time maintained above:
183°C
217°C
- Temperature (TL)
60-150 seconds
60-150 seconds
- Time (t L)
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.3 - Nov., 2005
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APM7313K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volume mm
Volume mm
<350
≥ 350
<2.5 mm
240 +0/-5 °C
225 +0/- 5 ° C
≥ 2.5 mm
225 +0/-5 °C
225 +0/- 5 ° C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350 -2000
>2000
<1.6 mm
260 +0 ° C *
260 +0° C*
260 +0 ° C *
1.6 mm – 2.5 mm
260 +0 ° C *
250 +0° C*
245 +0 ° C *
≥ 2.5 mm
250 +0 ° C *
245 +0° C*
245 +0 ° C *
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0 °C.
For example 260 ° C+0 °C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
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Rev. B.3 - Nov., 2005
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Ko
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APM7313K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55+
0.25
1.55±0.1
4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
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