ANPEC APM9922KC-TUL

APM9922K
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
20V/6A,
RDS(ON) =28mΩ(typ.) @ VGS =4.5V
RDS(ON) =34mΩ(typ.) @ VGS =2.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Top View of SOP − 8
Lead Free Available (RoHS Compliant)
(8) (7)
D1 D1
Applications
•
(6)
D2
(5)
D2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(4)
G2
(2)
G1
S1
(1)
S2
(3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9922
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9922 K :
APM9922
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
1
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APM9922K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±10
Continuous Drain Current
IDM*
IS*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
6
ID*
TSTG
Unit
VGS=4.5V
A
20
A
1.7
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
62.5
°C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±10V, VDS=0V
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
Typ.
Max.
20
1
30
0.5
0.7
V
±100
nA
32
VGS=2.5V, IDS=5.2A
34
45
ISD=1.7A, VGS=0V
0.7
1.3
10
13
3.6
µA
1.5
28
VDS=10V, VGS=4.5V,
IDS=6A
Unit
V
VGS=4.5V, IDS=6A
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Min.
TJ=85°C
VDS=VGS, IDS=250µA
Diode Forward Voltage
APM9922K
VDS=16V, VGS=0V
Gate Threshold Voltage
RDS(ON) a Drain-Source On-state Resistance
VSDa
(TA = 25°C unless otherwise noted)
mΩ
V
nC
2
2
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APM9922K
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristicsb
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
(T A = 25°C unless otherwise noted)
Test Condition
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Turn-off Fall Time
APM9922K
Min.
Typ.
Max.
Unit
Ω
9
520
pF
110
70
17
32
15
28
45
82
25
46
ns
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
3
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APM9922K
Typical Characteristics
Drain Current
Power Dissipation
7
2.5
6
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
5
4
3
2
0.5
1
o
TA=25 C,VG=4.5V
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Lim
it
300µs
Rd
s(o
n)
10
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
50
1ms
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
Rev. B.1 - Jun., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM9922K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
60
20
VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V
1V
16
ID - Drain Current (A)
55
RDS(ON) - On - Resistance (mΩ)
18
14
12
10
0.5V
8
6
4
2
0
45
VGS= 4.5V
40
35
VGS=10V
30
25
20
15
10
0
1
2
3
4
0
5
4
8
12
16
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
20
16
ID - Drain Current (A)
50
12
8
o
Tj=25 C
o
Tj=-55 C
4
o
Tj=125 C
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
IDS =250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
VGS - Gate - Source Voltage (V)
20
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM9922K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.0
VGS= 4.5V
ID = 6A
1.6
10
1.4
o
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
0.2
Tj=150 C
o
Tj=25 C
o
[email protected]=25 C: 28mΩ
0.0
-50 -25
0
25
50
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
800
Frequency=1MHz
VGS - Gate - source Voltage (V)
C - Capacitance (pF)
600
Ciss
500
400
300
200
Coss
Crss
100
0
VDS= 10V
9
700
0
4
8
12
16
Rev. B.1 - Jun., 2005
7
6
5
4
3
2
1
0
4
8
12
16
20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
8
0
20
ID = 6A
6
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APM9922K
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
φ 1
8°
8°
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
7
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APM9922K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
8
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APM9922K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
D1
9
Ko
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APM9922K
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
A
330±1
SOP-8
F
5.5 ± 0.1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
Carrier Width
12
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
P
8± 0.1
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Jun., 2005
10
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