ANPEC APM9932CKC-TU

APM9932CK
Dual Enhancement Mode MOSFET (N-and P-Channel)
Pin Description
Features
•
N-Channel
D
D
20V/9A,
RDS(ON) =12mΩ(typ.) @ VGS = 4.5V
RDS(ON) =18mΩ(typ.) @ VGS = 2.5V
•
D
S1
G1
S2
G2
P-Channel
Top View of SOP − 8
-20V/-6A,
RDS(ON) =30mΩ(typ.) @ VGS =-4.5V
RDS(ON) =50mΩ(typ.) @ VGS =-2.5V
•
•
•
D
(8)
D1
(7)
D1
(6)
D2
(5)
D2
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(4)
G2
(2)
G1
Applications
•
S1
(1)
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
S2
(3)
N-P Channel MOSFET
Systems
Ordering and Marking Information
P ackage C ode
K : S O P -8
O perating Junction T em p. R ange
C : -55 to 150°C
H andling C ode
T U : T ube
T R : T ape & R eel
Lead F ree C ode
L : Lead F ree D evice B lank : O riginal D evice
A PM 9932C
Lead F ree C ode
H andling C ode
T em p. R ange
P ackage C ode
A PM 9932C K :
A PM 9932C
XXXXX
X X X X X - D ate C ode
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1
www.anpec.com.tw
APM9932CK
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
20
-20
VGSS
Gate-Source Voltage
±16
±12
9
-6
30
-20
1.5
-1.2
ID*
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
9
30
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM9932CK
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th)
Gate Threshold Voltage
IGSS
RDS(ON)
VSD
a
Gate Leakage Current
a
Drain-Source On-State
Resistance
Diode Forward Voltage
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
VGS=0V, IDS=250µA
N-Ch
20
VGS=0V, IDS=-250µA
P-Ch
-20
VDS=16V, VGS=0V
N-Ch
1
VDS=-16V, VGS=0V
P-Ch
-1
VDS=VGS, IDS=250µA
N-Ch
0.55
0.7
1.5
VDS=VGS, IDS=-250µA
P-Ch
-0.45
-0.6
-1
VGS=±16V, VDS=0V
N-Ch
±100
VGS=±12V, VDS=0V
P-Ch
±100
VGS=4.5V, IDS=9A
N-Ch
12
18
VGS=-4.5V, IDS=-6A
P-Ch
30
45
VGS=2.5V, IDS=6A
N-Ch
18
27
VGS=-2.5V, IDS=-4A
P-Ch
50
65
ISD=1.5A, VGS=0V
N-Ch
0.75
1.3
ISD=-1.2A, VGS=0V
P-Ch
-0.8
-1.3
2
V
µA
V
nA
mΩ
V
www.anpec.com.tw
APM9932CK
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Tf
APM9932CK
Test Condition
Min.
Typ.
Max.
Unit
b
Ciss
td(OFF)
(TA = 25°C unless otherwise noted)
N-Ch
1205
P-Ch
1210
N-Ch
310
P-Channel
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
P-Ch
310
N-Ch
210
P-Ch
205
N-Ch
8
15
P-Ch
7
13
N-Ch
10
17
P-Ch
9
16
N-Ch
29
43
P-Ch
27
42
N-Ch
7
11
P-Ch
6
9
N-Channel
VDS=10V, VGS=4.5V,
IDS=6A
N-Ch
14
22
P-Ch
17
25
N-Ch
5
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-5A
P-Ch
5.2
N-Ch
2.8
P-Ch
3.6
N-Channel
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Turn-off Delay Time
P-Channel
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
N-Channel
VGS=0V,
VDS=20V,
Frequency=1.0MHz
pF
ns
b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
3
www.anpec.com.tw
APM9932CK
Typical Characteristics
N-Channel
Drain Current
2.5
10
2.0
8
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
0.5
0.0
0
20
40
60
0
80 100 120 140 160
0
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
it
im
on
)L
s(
1ms
Rd
ID - Drain Current (A)
4
2
100
10
6
10ms
1
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
www.anpec.com.tw
APM9932CK
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
30
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
25
RDS(ON) - On - Resistance (Ω)
16
ID - Drain Current (A)
2.5V
12
8
2V
4
0
0
2
4
6
8
10
5
0
5
10
15
20
25
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
Normalized Threshold Voltage
1.6
16
ID - Drain Current (A)
VGS=4.5V
VDS - Drain-Source Voltage (V)
20
12
o
8
Tj=125 C
o
Tj=-55 C
4
0
0.0
15
0
10
VGS=2.5V
20
o
Tj=25 C
0.5
1.0
1.5
2.0 2.5
3.0 3.5
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
IDS=250µΑ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
4.0
30
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
www.anpec.com.tw
APM9932CK
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
20
VGS = 4.5V
IDS = 9A
10
o
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
o
Tj=25 C
1
0.6
o
[email protected]=25 C: 12mΩ
0.4
-50 -25
0
25
50
75
0.1
0.0
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.4
10
2000
Frequency=1MHz
VDS=10 V
VGS - Gate - source Voltage (V)
ID = 6 A
C - Capacitance (pF)
1600
Ciss
1200
800
0
Coss
Crss
400
0
4
8
12
16
6
4
2
0
20
0
5
10
15
20
25
30
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
8
6
www.anpec.com.tw
APM9932CK
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
2.5
8
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
6
4
2
0.5
0.0
0
20
40
60
0
80 100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
im
it
Normalized Transient Thermal Resistance
50
on
)L
10
s(
1ms
Rd
-ID - Drain Current (A)
0
10ms
1
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
www.anpec.com.tw
APM9932CK
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
80
VGS= -2.5, -3, -4, -5, -6, -7, -8, -9, -10V
70
RDS(ON) - On - Resistance (Ω)
-ID - Drain Current (A)
8
6
-2V
4
2
60
VGS= -2.5V
50
40
VGS= -4.5V
30
20
0
0
2
4
6
10
8
0
2
4
6
8
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
10
10
1.50
Normalized Threshold Voltage
IDS= -250µΑ
-ID - Drain Current (A)
8
6
o
Tj=125 C
4
o
0
0.0
Tj=-55 C
o
2
Tj=25 C
0.5
1.0
1.5
2.0
2.5
1.00
0.75
0.50
0.25
0.00
-50 -25
3.0
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1.25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
8
www.anpec.com.tw
APM9932CK
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
1.8
VGS = -4.5V
IDS = -6A
o
Tj=150 C
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
1
o
Tj=25 C
0.1
0.6
o
[email protected]=25 C: 30mΩ
0.4
-50 -25
0
25
50
75
100 125 150
0.0
0.6
0.8
1.0
1.2
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.4
10
Frequency=1MHz
-VGS - Gate - source Voltage (V)
VDS= -10V
1600
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
2000
Ciss
1200
800
Coss
400
Crss
0
0.2
0
4
8
12
16
6
4
2
0
20
0
5
10
15
20
25
30
35
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
ID= -5A
8
9
www.anpec.com.tw
APM9932CK
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
1
L
0.004max.
Dim
A
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1. 27B S C
0. 50B S C
8°
8°
10
www.anpec.com.tw
APM9932CK
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Large Body
Small Body
Average ramp-up rate
3°C/second max.
(TL to TP)
Preheat
- Temperature Min (Tsmin)
100°C
- Temperature Mix (Tsmax)
150°C
- Time (min to max)(ts)
60-120 seconds
Tsmax to TL
- Ramp-up Rate
Tsmax to TL
- Temperature(TL)
183°C
- Time (tL)
60-150 seconds
Peak Temperature(Tp)
225 +0/-5°C
240 +0/-5°C
Time within 5°C of actual Peak
10-30 seconds
10-30 seconds
Temperature(tp)
Ramp-down Rate
6°C/second max.
6 minutes max.
Time 25°C to Peak Temperature
Pb-Free Assembly
Large Body
Small Body
3°C/second max.
150°C
200°C
60-180 seconds
3°C/second max
217°C
60-150 seconds
245 +0/-5°C
250 +0/-5°C
10-30 seconds
20-40 seconds
6°C/second max.
8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
11
www.anpec.com.tw
APM9932CK
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP-8
A
330±1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
T1
12.4 +0.2
T2
2± 0.2
F
D
D1
Po
P1
Ao
5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1
W
12 + 0.3
- 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
12
www.anpec.com.tw
APM9932CK
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
13
www.anpec.com.tw