AO3404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and AO3404L are electrically identical. VDS (V) = 30V ID = 5.8A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 43mΩ (VGS = 4.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain A Current Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range A Alpha & Omega Semiconductor, Ltd. V 1.4 W 1 TJ, TSTG t ≤ 10s Steady-State Steady-State A 20 -55 to 150 Symbol A ±20 4.9 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 5.8 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 65 85 43 °C Max 90 125 60 Units °C/W °C/W °C/W AO3404 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 VGS=10V, ID=5.8A TJ=125°C VGS=4.5V, ID=5.0A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current IS VDS=5V, ID=5.8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V VDS=24V, VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 10 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 43 A 0.76 VGS=10V, VDS=15V, ID=5.8A mΩ S 1 V 2.5 A 820 pF 102 pF 77 VGS=0V, VDS=0V, f=1MHz mΩ 14.5 680 VGS=0V, VDS=15V, f=1MHz µA pF 3 3.6 Ω 13.88 17 nC 6.78 8.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.12 tD(on) Turn-On DelayTime 4.6 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 1.8 nC nC ns 3.8 5.7 ns 20.9 30 ns 5 7.5 ns IF=5.8A, dI/dt=100A/µs 16.1 Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 7.4 21 10 ns nC VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 6V 5V 4.5V ID(A) ID (A) 20 15 3.5V 12 8 10 125°C 4 VGS=3V 5 VDS=5V 16 4V 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.6 50 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 VGS=10V ID=5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO3404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=5.8A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 15 30 100µs 10µs 10ms 0.1s 1 25 TJ(Max)=150°C TA=25°C 30 1ms 10 20 40 Power W ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000