AO4480 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AO4480 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 15.5mΩ (VGS = 4.5V) ESD Rating: 4KV HBM UIS Tested Rg,Ciss,Coss,Crss Tested D D D D D S S S G G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25°C Units V ±20 V 14 TA=70°C IDSM IDM Pulsed Drain Current B TA=25°C Power Dissipation B Avalanche Current Maximum 40 70 3.1 PD TA=70°C A 11 W 2.0 IAR 30 A Repetitive avalanche energy 0.3mH B EAR 135 mJ Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 59 16 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4480 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 70 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=4.5V, ID=5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=14A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=14A µA 3 11.5 13 12 V mΩ 15.5 mΩ 1 V 4 A 1920 pF 50 0.7 1600 VGS=0V, VDS=20V, f=1MHz uA A 9 TJ=125°C Forward Transconductance 5 ±100 VGS=10V, ID=14A VSD Units V VDS=32V, VGS=0V Zero Gate Voltage Drain Current gFS Max 40 IDSS IS Typ S 320 pF 100 pF 3.4 Ω 22 nC 10.5 nC 4.2 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=20V, RL=1.5Ω, RGEN=3Ω 13.2 ns 3.5 ns IF=14A, dI/dt=100A/µs 31 Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/µs 33 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 80 -40°C VDS=5V 5V 25°C 80 4V 125°C 60 ID(A) ID (A) 60 40 40 VGS=3.5V 20 20 VGS=3V -40°C 125°C 25°C 0 0 0 1 2 3 4 2 5 2.5 3 3.5 14 1.6 Normalized On-Resistance 12 RDS(ON) (mΩ) 4.5 10 VGS=10V 8 6 0 5 10 15 20 25 5 5.5 500 150 60 VGS=4.5V 30 VGS=10V ID=14A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 30 1.0E+00 25 ID=14A 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 125°C 15 1.0E-02 1.0E-03 -40°C 1.0E-04 10 25°C 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=20V ID=14A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1600 1200 800 Coss Crss 400 0 0 4 8 12 16 20 0 24 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10ms 1.0 10s 0.0 0.01 1s DC TJ(Max)=150°C TA=25°C 0.1 Power (W) 100ms RDS(ON) limited TJ(Max)=150°C Tc=25°C 80 1ms 40 500 150 60 100 10.0 ID (Amps) 15 10µs 100µs 60 40 20 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 10 ZθJA Normalized Transient Thermal Resistance 10 0 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 0.1 0.01 0.00001 PD Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com