AO4624 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4624 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4624 is Pb-free (meets ROHS & Sony 259 specifications). AO4624L is a Green Product ordering option. AO4624 and AO4624L are electrically identical. n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS = -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current TA=70°C Power Dissipation B Avalanche Current 5.8 -5 30 -30 2 2 1.44 1.44 15 20 A 11 20 -55 to 150 -55 to 150 mJ °C PD TA=70°C Repetitive avalanche energy 0.1mH IAR B Junction and Storage Temperature Range EAR TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. V ±20 -6 ID IDM TA=25°C Units V 6.9 TA=25°C B Max p-channel -30 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 A W Max 62.5 110 40 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W AO4624 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Conditions Typ Max 0.002 1 5 100 3 30 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250μA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A 1 20 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω IF=6.9A, dI/dt=100A/μs IF=6.9A, dI/dt=100A/μs 10 Units 1.9 μA nA V A 23 31 34 15.4 0.76 28 38 42 mΩ 1 3 S V A 737 115 73 3 885 13.84 6.74 1.82 3.2 4.6 4.1 20.6 5.2 17 8.1 7 6 30 8 nC nC nC nC ns ns ns ns 17.9 9.8 21.5 11.8 ns nC 4.5 mΩ pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 6V 5V 4.5V ID(A) ID (A) 20 15 3.5V 10 12 8 125°C 4 VGS=3V 5 VDS=5V 16 4V 25°C 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 3.5 4 4.5 1.7 Normalized On-Resistance 60 50 RDS(ON) (mΩ) 0.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 10 1.6 ID=6.9A 1.5 VGS=10V 1.4 VGS=4.5V 1.3 ID=5A 1.2 1.1 1 0.9 0.8 0 5 10 15 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 10 70 ID=6.9A 60 IS Amps RDS(ON) (mΩ) 1 50 125°C 40 125° 0.1 25°C 30 0.01 25°C 20 0.001 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 800 Capacitance (pF) 8 VGS (Volts) 900 VDS=15V ID=6.9A 6 4 2 700 Ciss 600 500 400 300 Coss 200 Crss 100 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 Qg (nC) Figure 7: Gate-Charge characteristics 5 10 15 100 25 30 40 TJ(Max)=150°C TA=25°C 1ms 10 10μs 10ms 0.1s RDS(ON) limited 1 TJ(Max)=150°C TA=25°C 30 100μs Power W ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4624 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250μA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max -0.003 -1 -5 ±100 -2.4 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250μA VGS=-10V, VDS=-5V VGS=-10V, ID=-6A -1.2 30 TJ=125°C VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω IF=-6A, dI/dt=100A/μs IF=-6A, dI/dt=100A/μs Units -2 μA nA V A 27 35 37 45 13 -0.76 45 58 mΩ -1 -4.2 S V A mΩ 920 190 122 3.6 1100 18.5 9.6 2.7 4.5 7.7 5.7 20.2 9.5 22.2 11.6 11.5 8.5 30 14 nC nC nC nC ns ns ns ns 20 12.3 24 15 ns nC 5.4 pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The θJA value in any given application depends on theon user's specific boardboard design. The current rating rating is based on theon t the ≤t 10s≤ thermal resistance The value in any a given application depends the user's specific design. The current is based 10s thermal rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to resistance from junction to drain lead. are obtained using 80 μs pulses, duty cycle 0.5% max. D. thermal The static characteristics in Figures 1 to 6,12,14 D. The static characteristics Figures 1 to 6,12,14 are on obtained 80 μswith pulses, cyclein0.5% FR-4 board 2oz.duty Copper, a stillmax. air environment with T A=25°C. E. These tests are performedinwith the device mounted 1 in 2 using 2 E. These performed withpulse the device The SOA tests curveare provides a single rating.mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 -10V -5V 25 20 -4V -ID(A) -ID (A) 20 15 -3.5V 10 5 VDS=-5V 25 -4.5V -6V 15 10 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 80 Normalized On-Resistance 60 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 5 1.6 70 VGS=-4.5V 50 40 30 VGS=-10V 20 ID=-6A 1.4 VGS=-10V 1.2 VGS=-4.5V ID=-5A 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 90 ID=-6A 1.0E+00 80 1.0E-01 70 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 125°C 50 125°C 1.0E-02 1.0E-03 1.0E-04 40 30 25°C 1.0E-05 25°C 1.0E-06 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1500 10 VDS=-15V ID=-6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 30 Power (W) 0.1s 1ms 10ms 1s 20 10 10s DC 0.1 0.1 15 TJ(Max)=150°C TA=25°C 10μs 100μs RDS(ON) limited 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 Pulse Width 0.1 (s) 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000