AOSMD AO4700L

AO4700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 4.5V)
The AO4700 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for non-synchronous DC-DC conversion
applications. Standard Product AO4700 is Pb-free (meets
ROHS & Sony 259 specifications). AO4700L is a Green
Product ordering option. AO4700 and AO4700L are
electrically identical.
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
SCHOTTKY
VDS (V) = 30V, IF = 4A, VF<[email protected]
D
K
S
A
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current A
Pulsed Drain Current
TA=70°C
B
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward Current A
Pulsed Forward Current
TA=70°C
B
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
C
Steady-State
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
30
V
V
5.8
A
30
IF
PD
Schottky
±20
6.9
IFM
TA=25°C
Maximum Junction-to-Lead
ID
MOSFET
30
4
V
2.6
A
2
40
2
1.28
1.28
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
44
62.5
73
31
110
40
W
°C/W
°C/W
AO4700
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
20
VGS=10V, I D=6.9A
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, I D=5.0A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=6.9A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
Units
V
VDS=24V, VGS=0V
VGS(th)
IS
Max
30
IGSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, I D=6.9A
10
µA
100
nA
1.9
3
V
22.5
28
31.3
38
34.5
42
mΩ
1
V
3
A
A
15.4
mΩ
S
0.76
680
pF
102
pF
77
pF
3
Ω
13.84
nC
6.74
nC
1.82
nC
3.2
nC
4.6
ns
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
4.1
ns
20.6
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
5.2
ns
trr
Body Diode Reverse Recovery Time
IF=6.9A, dI/dt=100A/µs
16.5
Body Diode Reverse Recovery Charge
IF=6.9A, dI/dt=100A/µs
7.8
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=3.0A
0.45
0.5
0.07
0.15
Irm
VR=24V
VR=24V, TJ=125°C
4.2
20
VR=24V, TJ=150°C
15
120
60
Qrr
CT
Maximum reverse leakage current
Junction Capacitance
VR=15V
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
6V
5V
4.5V
20
12
ID(A)
ID (A)
VDS=5V
16
4V
15
3.5V
10
8
125°C
4
VGS=3V
5
25°C
0
0
0
1
2
3
4
0
5
0.5
Normalized On-Resistance
50
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
1.6
60
VGS=4.5V
40
30
20
VGS=10V
10
0
5
10
15
VGS=10V
ID=5A
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
20
0
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=5A
50
IS Amps
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
0.0
10
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
10
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=6.9A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
5
Qg (nC)
Figure 7: Gate-Charge characteristics
100
Power W
ID (Amps)
25
30
TJ(Max)=150°C
TA=25°C
10µs
10ms
0.1s
1
20
40
30
100µs
1ms
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
AO4700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
600
1.00E+01
125°C
f = 1MHz
500
Capacitance (pF)
IF (Amps)
1.00E+00
1.00E-01
1.00E-02
400
300
200
100
25°C
1.00E-03
0
0.0
0.2
0.4
0.6
0.8
1.0
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
1.0E-01
0.6
IF=5A
Leakage Current (A)
VF (Volts)
5
0.5
0.4
IF=3A
0.3
0.2
1.0E-02
1.0E-03
VR=24V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Toff
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000