AOSMD AO4703L

AO4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4703 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4703 is Pb-free
(meets ROHS & Sony 259 specifications). AO4703L
is a Green Product ordering option. AO4703 and
AO4703L are electrically identical.
A
S
S
G
1
2
3
4
8
7
6
5
VDS (V) = -30V
ID = -12A (VGS =- 20V)
RDS(ON) < 14mΩ (VGS =- 20V)
RDS(ON) < 15mΩ (VGS = -10V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
D/K
D/K
D/K
D/K
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
A
Continuous Drain Current
TA=70°C
B
TA=25°C
Continuous Forward CurrentA
TA=70°C
B
S
A
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±25
-12
V
-10
A
-60
IF
PD
Schottky
-30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
K
G
SOIC-8
Pulsed Drain Current
D
30
4.4
V
3.2
A
3
30
3
2.1
2.1
-55 to 150
-55 to 150
°C
Typ
Max
Units
28
40
54
75
30
21
W
°C/W
40
75
°C/W
AO4703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
60
VGS=-10V, ID=-10A
Static Drain-Source On-Resistance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
VGS=-20V, ID=-10A
11
14
VGS=-4.5V, ID=-10A
25
VDS=-5V, ID=-10A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
nA
20
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-12A
µA
-3
15
Forward Transconductance
Units
±100
16
gFS
Coss
-2.5
12
TJ=125°C
VSD
IS
Max
V
VDS=-24V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
mΩ
26
-0.72
mΩ
S
-1
V
-4.2
A
2076
pF
503
pF
302
pF
2
Ω
37.2
nC
7
nC
Qgd
Gate Drain Charge
10.4
nC
tD(on)
Turn-On DelayTime
12.4
ns
8.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
25.6
ns
12
ns
IF=-12A, dI/dt=100A/µs
33
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
23
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.5
0.007
0.05
Irm
VR=30V
VR=30V, TJ=125°C
3.2
10
VR=30V, TJ=150°C
12
37
20
CT
Maximum reverse leakage current
Junction Capacitance
VR=15V
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4703, AO4703L
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
-8V
25
-6V
VDS=-5V
-5.5V
40
20
15
-ID(A)
-ID (A)
-5V
30
20
-4.5V
10
125°C
10
5
VGS=-4V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
-VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.6
25
20
VGS=-6V
15
10
VGS=-10V
5
0
ID=-10A
1.4
VGS=-10V
1.2
VGS=-4.5V
1
0.8
0
5
10
15
20
25
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=-10A
1.0E+00
40
1.0E-01
30
-IS (A)
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
30
RDS(ON) (mΩ)
1.5
125°C
20
25°C
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
10
1.0E-05
1.0E-06
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4703
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=-15V
ID=-12A
2500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
2000
1500
Coss
1000
Crss
500
0
0
0
5
10
15
20
25
30
35
40
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
100µs
RDS(ON)
limited
10ms
30
20
10
10s
DC
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
25
30
1ms
1s
10
20
TJ(Max)=150°C
TA=25°C
10µs
0.1s
0.1
15
40
TJ(Max)=150°C
TA=25°C
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
100
0.6
IF=3A
Leakage Current (mA)
VF (Volts)
5
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000