AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4703 is Pb-free (meets ROHS & Sony 259 specifications). AO4703L is a Green Product ordering option. AO4703 and AO4703L are electrically identical. A S S G 1 2 3 4 8 7 6 5 VDS (V) = -30V ID = -12A (VGS =- 20V) RDS(ON) < 14mΩ (VGS =- 20V) RDS(ON) < 15mΩ (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D/K D/K D/K D/K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C A Continuous Drain Current TA=70°C B TA=25°C Continuous Forward CurrentA TA=70°C B S A MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State t ≤ 10s A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±25 -12 V -10 A -60 IF PD Schottky -30 IFM TA=25°C Maximum Junction-to-Lead ID IDM VKA Schottky reverse voltage Pulsed Forward Current K G SOIC-8 Pulsed Drain Current D 30 4.4 V 3.2 A 3 30 3 2.1 2.1 -55 to 150 -55 to 150 °C Typ Max Units 28 40 54 75 30 21 W °C/W 40 75 °C/W AO4703 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V 60 VGS=-10V, ID=-10A Static Drain-Source On-Resistance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=-20V, ID=-10A 11 14 VGS=-4.5V, ID=-10A 25 VDS=-5V, ID=-10A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance nA 20 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12A µA -3 15 Forward Transconductance Units ±100 16 gFS Coss -2.5 12 TJ=125°C VSD IS Max V VDS=-24V, VGS=0V IGSS RDS(ON) Typ mΩ mΩ 26 -0.72 mΩ S -1 V -4.2 A 2076 pF 503 pF 302 pF 2 Ω 37.2 nC 7 nC Qgd Gate Drain Charge 10.4 nC tD(on) Turn-On DelayTime 12.4 ns 8.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω 25.6 ns 12 ns IF=-12A, dI/dt=100A/µs 33 Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 23 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 0.007 0.05 Irm VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C 12 37 20 CT Maximum reverse leakage current Junction Capacitance VR=15V V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4703, AO4703L P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V -8V 25 -6V VDS=-5V -5.5V 40 20 15 -ID(A) -ID (A) -5V 30 20 -4.5V 10 125°C 10 5 VGS=-4V 25°C 0 0 0 1 2 3 4 5 0 0.5 1 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.6 25 20 VGS=-6V 15 10 VGS=-10V 5 0 ID=-10A 1.4 VGS=-10V 1.2 VGS=-4.5V 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=-10A 1.0E+00 40 1.0E-01 30 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics 30 RDS(ON) (mΩ) 1.5 125°C 20 25°C 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 10 1.0E-05 1.0E-06 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4703 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-12A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 2000 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 100µs RDS(ON) limited 10ms 30 20 10 10s DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 25 30 1ms 1s 10 20 TJ(Max)=150°C TA=25°C 10µs 0.1s 0.1 15 40 TJ(Max)=150°C TA=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 IF=3A Leakage Current (mA) VF (Volts) 5 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000