AOSMD AO4705

AO4705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4705 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4705 is Pb-free
(meets ROHS & Sony 259 specifications). AO4705L
is a Green Product ordering option. AO4705 and
AO4705L are electrically identical.
A
S
S
G
1
2
3
4
8
7
6
5
VDS (V) = -30V
ID = -10A (VGS = -10V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 16mΩ (VGS = -10V)
SCHOTTKY
VDS (V) = 30V, IF = 5A, VF<[email protected]
D/K
D/K
D/K
D/K
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain CurrentA
TA=70°C
B
TA=25°C
A
Continuous Forward Current
TA=70°C
B
S
A
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±25
-10
V
-8
A
-60
IF
PD
Schottky
-30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
K
G
SOIC-8
Pulsed Drain Current
D
30
5
V
3.5
A
3
30
3
2
2
-55 to 150
-55 to 150
°C
Typ
Max
Units
28
40
54
21
75
30
36
40
67
25
75
30
W
°C/W
°C/W
AO4705
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
60
VGS=-10V, ID=-10A
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS=-20V, ID=-10A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
VGS=-10V, VDS=-15V, ID=-10A
nA
-3
V
16
16
21
10.7
14
25
VGS=0V, VDS=0V, f=1MHz
±100
13
26
VGS=0V, VDS=-15V, f=1MHz
µA
A
VDS=-5V, ID=-10A
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
-2.5
VGS=-4.5V, ID=-10A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Units
-1
TJ=55°C
RDS(ON)
Max
V
VDS=-24V, VGS=0V
VGS(th)
IS
Typ
-0.72
mΩ
mΩ
mΩ
S
-1
V
-4.2
A
2076
pF
503
pF
302
pF
2
Ω
37.2
nC
7
nC
Gate Drain Charge
10.4
nC
tD(on)
Turn-On DelayTime
12.4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
8.2
ns
25.6
ns
tf
Turn-Off Fall Time
12
ns
trr
Body Diode Reverse Recovery Time
IF=-10A, dI/dt=100A/µs
33
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
23
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=3.0A
0.48
0.52
0.07
0.15
Irm
Maximum reverse leakage current
VR=24V
VR=24V, TJ=125°C
4.2
20
VR=24V, TJ=150°C
Junction Capacitance
VR=15V
15
120
60
CT
V
mA
pF
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
The SOA curve provides a single pulse rating.
Rev 4: June 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
-8V
25
-6V
VDS=-5V
-5.5V
40
20
-ID(A)
-ID (A)
-5V
30
20
15
10
-4.5V
125°C
10
5
VGS=-4V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
25
1.6
20
RDS(ON) (mΩ)
Normalized On-Resistance
ID=-10A
VGS=-6V
VGS=-10V
15
10
VGS=-20V
5
VGS=-10V
1.4
VGS=-20V
1.2
1
0.8
0
5
10
15
20
25
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
ID=-10A
1.0E+00
50
1.0E-01
40
30
-IS (A)
RDS(ON) (mΩ)
25
125°C
20
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
10
1.0E-05
1.0E-06
0
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=-15V
ID=-10A
2500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
2000
1500
Coss
1000
Crss
500
0
0
0
5
10
15
20
25
30
35
40
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
40
RDS(ON)
limited
100µs
TJ(Max)=150°C
TA=25°C
10µs
30
1ms
10.0
Power (W)
-ID (Amps)
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
0.1
DC
1
10
0
0.001
100
-VDS (Volts)
D=Ton/T
TJ,PK =TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
20
10
10s
0.1
ZθJA Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
600
10
125°C
Capacitance (pF)
IF (Amps)
1
0.1
0.01
25°C
400
300
200
100
0.001
0.0
0.2
0.4
0.6
0.8
0
1.0
0
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.7
5
1.0E-01
0.6
IF=5A
Leakage Current (A)
VF (Volts)
f = 1MHz
500
0.5
0.4
IF=3A
0.3
0.2
1.0E-02
1.0E-03
VR=24V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
Alpha & Omega Semiconductor, Ltd.
0.01
0.1
1
T
10
100
1000