AO4720 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Max Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain TA=25°C AF Current TA=70°C B Pulsed Drain Current VGS IDSM IDM C IAR Repetitive avalanche energy L=0.3mH C EAR Avalanche Current TA=25°C Power Dissipation PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJL 10 Sec Steady State 30 ±20 V 13 10 10.5 7.8 A 120 A 21 A 66 mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4720 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 ID(ON) VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=13A TJ=125°C VGS=4.5V, ID=11A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current VDS=5V, ID=13A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 20 1.62 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=13A mA 0.1 µA 2 V A 9.3 11.0 13.8 17.3 14 17.5 mΩ 0.5 V 5 A 1600 pF 37 mΩ S 0.40 1267 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 308 pF 118 pF 1.3 2.0 Ω 21 30 nC 10.4 14 nC 3.0 nC Gate Drain Charge 3.6 nC Turn-On DelayTime 5.2 ns 3.8 ns 21.2 ns 4.4 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=13A, dI/dt=300A/µs 11.2 Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs 10.5 17 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4720 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 6V 80 5V 60 4.5V 40 VDS=5V 25 7V 20 ID(A) ID (A) 100 15 125° 10 4V 25°C 20 5 VGS=3.5V 0 0 0 DYNAMIC 1 2 3 4 1 5 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 18 1.8 Normalized On-Resistance 16 VGS=4.5V RDS(ON) (mΩ) 2 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 14 12 VGS=10V 10 8 VGS=10V 1.6 ID=13A 1.4 VGS=4.5V ID=11A 1.2 1 6 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 ID=13A 1.0E+01 125°C 25 20 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4720 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 1600 VDS=15V ID=13A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 1200 800 2 Coss 400 Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 RDS(ON) limited 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1ms 1.0 TJ(Max)=150°C TA=25°C 100µ 10ms 1s 10s DC TJ(Max)=150°C TA=25°C 80 10µs 10.0 0.1 10 100 Power (W) ID (Amps) 100.0 5 60 40 20 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com