AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical. VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 D2 G1 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA C Maximum Junction-to-Lead Symbol Alpha & Omega Semiconductor, Ltd. Units V V ±25 8.5 6.5 A 40 2 W 1.28 -55 to 150 TJ, TSTG t ≤ 10s Steady-State Steady-State Maximum 30 RθJA RθJL Typ 48 74 33 °C Max 62.5 110 40 Units °C/W °C/W °C/W AO4816 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 100 nA 3 V 13.5 17 17.5 22 VGS=10V, I D=8.5A 16 20 mΩ VGS=4.5V, I D=5A 36 46 mΩ 1 V 4.3 A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, I D=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 10 A 17 mΩ S 0.76 758 pF 180 pF 128 pF 0.7 Ω 16.5 nC 8.6 nC 2.5 nC 4.8 nC 5.4 ns 5.1 ns 14.4 ns 3.7 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.9 Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.6 Qrr µA 2.4 VGS=20V, I D=8.5A IS Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 10V 45 6V 25 7V 35 ID (A) VDS=5V 20 5V 30 ID(A) 40 25 3.5V 20 15 125°C 10 15 VGS=3V 10 25°C 5 5 0 0 0 1 2 3 4 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 45 1.8 35 Normalized On-Resistance 40 RDS(ON) (mΩ) 3 VGS=4.5V 30 25 20 VGS=10V 15 VGS=20V 10 ID=8.5A 1.6 VGS=10V 1.4 VGS=20V 1.2 1 5 0 5 10 15 20 25 0.8 30 0 60 1.0E+01 50 1.0E+00 ID=8.5A 40 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E-01 IS (A) RDS(ON) (mΩ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 125°C 20 125°C 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 0 0 5 10 15 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=8.5A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 Crss 0 0 4 8 12 16 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 100µs 10ms 0.1s 1s TJ(Max)=150°C TA=25°C 10s 30 20 15 10 0 0.001 0.1 1 25 5 DC 0.1 20 TJ(Max)=150°C TA=25°C 25 Power (W) ID (Amps) 30 10.0 1.0 15 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 100.0 10 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000