AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage VGS ±25 V ID IDM TA=70°C B TA=25°C Power Dissipation Avalanche Current B Units V TA=25°C Continuous Drain Current A Pulsed Drain Current VDS Maximum 10 Sec Steady State 75 Symbol 1.8 2 1.1 1.3 0.7 IAR Repetitive avalanche energy 0.3mH B EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 2.3 2.4 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 15 PD TA=70°C 3.1 RθJA RθJL W 10 A 15 mJ -55 to 150 °C Typ 50 82 41 Max 62.5 110 50 Units °C/W °C/W °C/W www.aosmd.com AO4850 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current 5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 15 VGS=10V, ID=3.1A TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=3.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=30V, ID=3.1A µA 100 nA 2.3 3 V 105 130 158 195 126 165 mΩ 1 V 2.5 A 380 pF A 10 0.77 290 VGS=0V, VDS=30V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 75 VDS=75V, VGS=0V IGSS RDS(ON) Typ mΩ S 54 pF 24 pF 2.4 3.5 Ω 5.14 7 nC 2.34 nC 0.97 nC 1.18 nC 4 ns VGS=10V, VDS=30V, RL=9.7Ω, RGEN=3Ω 3.4 ns 14.4 ns 2.4 trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs 30.2 Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 21.5 ns 45 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 1: May. 2007 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 5V 6V VDS=5V 10V 12 12 4.5V 9 ID(A) ID (A) 9 4V 6 6 125°C 3 3 25°C VGS=3.5V 0 0 0 1 2 3 4 5 1 2 3 200 1.8 170 1.6 140 110 1.4 ID=3.1A 1.2 VGS=4.5V ID=2A VGS=10V, VDS=15V, RL=2.0Ω, RGEN=3Ω VGS=10V 80 50 0 2 IF=7.4A, dI/dt=100A/µs 4 6 8 5 VGS=10V VGS=10V, VDS=15V, ID=7.4A VGS=4.5V 4 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance RDS(ON) (mΩ) VDS (Volts) Fig 1: On-Region Characteristics 1 0.8 0.6 10 I =7.4A, dI/dt=100A/µs (A) F -50 ID Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 210 1.0E+02 ID=3.1A 1.0E+01 180 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 150 1.0E-01 1.0E-02MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 120 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS 25°C PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 90 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-05 60 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=30V ID=3.1A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss Crss 100 0 0 0 1 2 3 4 5 6 0 10 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 20 60 40 TJ(Max)=150°C TA=25°C 10µs VGS=10V, VDS=15V, ID=7.4A30 ID (Amps) RDS(ON) limited 10ms 100µs Power (W) 10.0 0.1s 1ms VGS=10V, VDS=15V, RL=2.0Ω, RGEN=3Ω 1.0 1s TJ(Max)=150°C TA=25°C 0.1 10 DC 10s 0.1 1 0 0.001 IF=7.4A, dI/dt=100A/µs 10 IF=7.4A, VDS (Volts) 100 dI/dt=100A/µs 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com