AOSMD AO4902

AO4902
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
General Description
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
The AO4902 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two identical
MOSFETs are co-packaged in parallel with a Schottky
diode, making them ideal for many bridge and totem pole
applications, for e.g. DDR memory. Standard Product
AO4902 is Pb-free (meets ROHS & Sony 259
specifications). AO4902L is a Green Product ordering
option. AO4902 and AO4902L are electrically identical.
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
D1
S2/A2
G2
S1/A1
G1
1
2
3
4
K1
D2/K2
D2/K2
D1/K1
D1/K1
8
7
6
5
VGS
Gate-Source Voltage
TA=25°C
A
Continuous Drain Current
TA=70°C
B
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward CurrentA
TA=70°C
B
S2
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±12
6.9
V
5.8
A
40
IF
PD
Schottky
30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
A2
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Pulsed Forward Current
K2
A1
G1
SOIC-8
Pulsed Drain Current
D2
30
3
V
2
A
2
40
2
1.44
1.44
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
47.5
62.5
71
32
110
40
W
°C/W
°C/W
AO4902
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=250µA, VGS=0V
30
1
TJ=55°C
5
VDS=0V, VGS= ±12V
100
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
On state drain current
VGS=4.5V, VDS=5V
25
VGS=10V, ID=6.9A
VGS=4.5V, ID=6.0A
27
32
mΩ
VGS=2.5V, ID=5A
42
50
mΩ
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
27
VSD
Crss
1.4
40
Forward Transconductance
Coss
nA
33
gFS
IS
1
µA
22.6
TJ=125°C
Static Drain-Source On-Resistance
Max Units
V
VDS=24V, VGS=0V
ID(ON)
RDS(ON)
Typ
12
16
0.71
846
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
3
A
1050
pF
96
pF
67
pF
VGS=0V, VDS=0V, f=1MHz
1.24
3.6
Ω
9.6
12
nC
VGS=4.5V, VDS=15V, ID=6.9A
1.65
nC
nC
Qgd
Gate Drain Charge
3
tD(on)
Turn-On DelayTime
3.2
4.8
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
ns
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
4.5
6.8
ns
26.3
40
ns
tf
Turn-Off Fall Time
4.8
7
ns
trr
Body Diode Reverse Recovery time
IF=5A, dI/dt=100A/µs
15.5
20
ns
Qrr
Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs
7.9
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.007 0.05
Irm
Maximum reverse leakage current
VR=30V
VR=30V, TJ=125°C
CT
Junction Capacitance
VR=15V
VR=30V, TJ=150°C
0.5
3.2
10
12
37
20
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3V
25
20
12
2.5V
15
ID(A)
ID (A)
VDS=5V
16
4.5V
10
125°C
VGS=2V
5
8
0
0
0
1
2
3
4
0
5
0.5
60
1.5
2
2.5
3
1.7
Normalized On-Resistance
VGS=2.5V
50
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
40
VGS=4.5V
30
20
VGS=10V
1.6
ID=5A
1.5
VGS=10V
VGS=4.5V
1.4
1.3
VGS=2.5V
1.2
1.1
1
0.9
10
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=5A
1.0E-01
50
40
125°C
30
25°C
IS (A)
RDS(ON) (mΩ)
25°C
4
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
20
1.0E-06
10
0
2
4
6
8
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
VDS=15V
ID=6.9A
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
1250
3
2
1
Ciss
1000
750
500
Coss
250
0
Crss
0
0
2
4
6
8
10
12
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
TJ(Max)=150°C
TA=25°C
30
100µs
1ms
Power (W)
10.0
ID (A)
10ms
0.1s
1.0
30
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10
1s
20
10
10s
DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
100
1000
AO4902
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
5
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
100
0.6
Leakage Current (mA)
IF=3A
VF (Volts)
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs. Junction
Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000