AOSMD AO4904L

AO4904
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4904 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4904 is Pb-free (meets ROHS &
Sony 259 specifications). AO4904L is a Green Product
ordering option. AO4904 and AO4904L are electrically
identical.
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
S2
G2
S1/A
G1
1
2
3
4
8
7
6
5
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
D1
D2
D2
D1/K
D1/K
K
A
G1
SOIC-8
VGS
Gate-Source Voltage
TA=25°C
Pulsed Drain Current
A
TA=70°C
B
ID
IDM
S2
MOSFET
TA=25°C
A
TA=70°C
Pulsed Forward Current B
V
V
5.8
A
40
TA=70°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
IF
A
Alpha & Omega Semiconductor, Ltd.
PD
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Units
±12
6.9
IFM
TA=25°C
Schottky
30
VKA
Schottky reverse voltage
Continuous Forward Current
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Continuous Drain Current
D2
30
3
V
2
A
2
40
2
1.44
1.44
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
47.5
62.5
71
32
110
40
W
°C/W
°C/W
AO4904
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
100
nA
1.4
V
22.6
27
33
40
VGS=4.5V, ID=6.0A
27
32
mΩ
VGS=2.5V, ID=5A
42
50
mΩ
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
1
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
Max Units
V
VDS=24V, VGS=0V
IGSS
RDS(ON)
Typ
12
A
16
0.71
846
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
3
A
1050
pF
96
pF
67
pF
VGS=0V, VDS=0V, f=1MHz
1.24
3.6
Ω
9.6
12
nC
VGS=4.5V, VDS=15V, ID=6.9A
1.65
nC
Qgd
Gate Drain Charge
3
tD(on)
Turn-On DelayTime
5.7
8.55
ns
tr
Turn-On Rise Time
13
6.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery time
Qrr
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
nC
37
40
ns
4.2
5.5
ns
IF=5A, dI/dt=100A/µs
15.5
20
Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs
7.9
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.007 0.05
Irm
VR=30V
VR=30V, TJ=125°C
Maximum reverse leakage current
VR=30V, TJ=150°C
CT
Junction Capacitance
VR=15V
ns
nC
0.5
3.2
10
12
37
20
V
mA
pF
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4904
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3V
25
20
2.5V
15
ID(A)
ID (A)
VDS=5V
16
4.5V
10
8
125°C
VGS=2V
5
12
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
1.7
Normalized On-Resistance
60
VGS=2.5V
50
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
40
VGS=4.5V
30
20
VGS=10V
10
0
5
10
15
1.6
ID=5A
1.5
VGS=10V
VGS=4.5V
1.4
1.3
VGS=2.5V
1.2
1.1
1
0.9
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=5A
1.0E-01
50
40
125°C
30
25°C
IS (A)
RDS(ON) (mΩ)
25°C
4
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
20
1.0E-06
10
0
2
4
6
8
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4904
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
VDS=15V
ID=6.9A
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
1250
3
2
Ciss
1000
1
750
500
Coss
250
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
ID (A)
20
25
30
30
10ms
0.1s
1.0
15
T J(Max)=150°C
T A=25°C
100µs
1ms
10
40
Power (W)
10.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
T J(Max)=150°C
T A=25°C
RDS(ON)
limited
Crss
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4904
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
100
0.6
IF=3A
Leakage Current (mA)
VF (Volts)
5
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
T on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000