AOSMD AO4918L

AO4918
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
The AO4918 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4918 is Pb-free (meets ROHS &
Sony 259 specifications). AO4918L is a Green Product
ordering option. AO4918 and AO4918L are electrically
identical.
VDS (V) = 30V
VDS(V) = 30V
ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V
RDS(ON) < 14.5mΩ
<18mΩ
(VGS = 10V)
<27mΩ
(VGS = 4.5V)
RDS(ON) < 16mΩ
Q2
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
B
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
A
Current
B
TA=25°C
Power Dissipation
TJ, TSTG
TA=25°C
Pulsed Diode Forward Current
A
PD
Symbol
VDS
TA=70°C
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
A
G1
IDM
TA=25°C
Q2
Q1
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
TA=25°C
A
Current
ID
TA=70°C
Pulsed Drain Current
D2
G2
S1
S2
Max Q1
30
Max Q2
30
Units
V
±12
±20
V
9.3
7.4
8.3
6.7
A
40
40
2
2
1.28
-55 to 150
1.28
-55 to 150
Maximum Schottky
30
W
°C
Units
V
3
IF
2.2
IFM
20
PD
TJ, TSTG
2
1.28
-55 to 150
A
W
°C
AO4918
Parameter: Thermal Characteristics MOSFET Q1
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Parameter: Thermal Characteristics MOSFET Q2
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
C
Steady-State
Maximum Junction-to-Lead
Symbol
Thermal Characteristics Schottky
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
RθJA
RθJL
RθJA
RθJL
Typ
53
81.9
30.5
Max
62.5
110
40
Units
Typ
53
81.9
30.5
Max
62.5
110
40
Units
50.4
86
26.6
62.5
110
40
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
°C/W
°C/W
°C/W
AO4918
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
IDSS
Min
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=9.3A
TJ=125°C
VGS=4.5V, ID=8.8A
Forward Transconductance
VSD
Diode+Schottky Forward Voltage
IS=1A
Maximum Body-Diode+Schottky Continuous Current
IS
VDS=5V, ID=9.3A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance (FET + Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=9.3A
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
30
3.2
10
mA
12
20
100
nA
1.1
2
VGS=10V, VDS=15V, RL=1.6Ω,
RGEN=3Ω
V
A
11.7
14.5
15.4
19
13.1
16
37
0.46
mΩ
mΩ
S
0.5
V
3.5
A
3740 4488
pF
295
pF
186
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
V
0.007 0.05
VR=30V, TJ=150°C
gFS
Max Units
30
VR=30V
VR=30V, TJ=125°C
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Typ
pF
0.86
1.1
Ω
30.5
37
nC
4.5
nC
8.5
nC
6
9
ns
8.2
12
ns
54.5
75
ns
10.5
15
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode + Schottky Reverse Recovery Time
IF=9.3A, dI/dt=100A/µs
23.5
28
ns
Qrr
Body Diode + Schottky Reverse Recovery Charge
IF=9.3A, dI/dt=100A/µs
13.3
16
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev4: August 2005.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4918
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
10V
25
4.5V
30
20
ID(A)
2.5V
ID (A)
VDS=5V
20
VGS=2V
15
125°C
10
10
5
25°C
0
0
0
1
2
3
4
0.5
5
1
14
Normalized On-Resistance
RDS(ON) (mΩ)
2
2.5
1.8
13
VGS=4.5V
12
VGS=10V
11
10
0
5
10
15
20
25
ID=9.3A
1.6
VGS=4.5V
1.4
VGS=10V
1.2
1
0.8
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
1.0E+01
30
125°C
1.0E+00
ID=9.3A
25
1.0E-01
20
IS (A)
RDS(ON) (mΩ)
1.5
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
15
1.0E-02
25°C
1.0E-03
25°C
10
FET+SCHOTTKY
1.0E-04
1.0E-05
5
0
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
Alpha Omega Semiconductor, Ltd.
1.0
AO4918
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
5
VDS=15V
ID=9.3A
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
Ciss
3
2
1000
Coss FET+SCHOTTKY
1
Crss
0
0
5
10
15
20
25
30
100
35
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
RDS(ON)
limited
TJ(Max)=150°C, TA=25°C
100µs
30
10µs
Power (W)
1ms
10.0
ID (A)
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000
AO4918
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
VGS=10V, ID=8.3A
TJ=125°C
VGS=4.5V, ID=7A
gFS
Forward Transconductance
VSD
Diode+Schottky Forward Voltage
IS=1A
Maximum Body-Diode+Schottky Continuous Current
VDS=5V, ID=8.3A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
VGS=0V, VDS=15V, f=1MHz
Max Units
V
0.004
IDSS
IS
Typ
1
5
1.8
100
nA
3
V
A
14.9
18
22
27
21.6
27
mΩ
0.5
V
3
A
23
0.45
VGS=10V, VDS=15V, ID=8.3A
mΩ
S
1040 1250
pF
180
pF
110
VGS=0V, VDS=0V, f=1MHz
µA
0.7
pF
0.85
Ω
19.2
24
nC
9.36
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.2
tD(on)
Turn-On DelayTime
5.2
7.5
ns
tr
Turn-On Rise Time
4.4
6.5
ns
tD(off)
Turn-Off DelayTime
17.3
25
ns
tf
Turn-Off Fall Time
3.3
5
ns
trr
Body Diode Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
16.7
21
ns
Qrr
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
6.7
10
nC
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
2.6
nC
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4918
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
30
10V
25
25
3.5V
4.5V
15
10
VDS=5V
20
ID(A)
20
ID (A)
30
4V
125°C
15
10
VGS=3V
25°C
5
5
0
0
0
1
2
3
4
1
5
1.5
26
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ)
22
18
VGS=10V
14
10
5
10
15
20
3
3.5
4
180
110
0.7
1.7
0
2.5
VGS (Volts)
1040
Figure 2: Transfer
Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
25
1.6
ID=8.3A
1.5
VGS=10V
VGS=4.5V
1.4
1.3
1.2
1.1
1
0.9
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
1.0E+01
60
1.0E+00
ID=8.3A
50
125°C
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
2
30
1.0E-02
25°C
1.0E-03
125°C
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4918
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
1500
10
VDS=15V
ID=8.5A
Capacitance (pF)
VGS (Volts)
8
1250
6
4
Ciss
1000
2
750
500
Coss
Crss
250
0
0
4
8
12
16
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
1ms
10µs
ID (A)
15
180
110
0.7
30
10ms
0.1s
1.0
10
40
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
5
20
25
30
VDS (Volts)
Figure 8: Capacitance
1040 Characteristics
Power (W)
10.0
f=1MHz
VGS=0V
1s
TJ(Max)=150°C
TA=25°C
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000