AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4926 is Pb-free (meets ROHS & Sony 259 specifications). UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Max FET2 VDS Drain-Source Voltage 30 30 VGS Gate-Source Voltage ±12 ±12 Continuous Drain 9.5 7.3 TA=25°C AF Current TA=70°C 7.8 5.9 IDSM Pulsed Drain Current B Units V V A IDM 40 40 A Avalanche Current B IAR 22 12 A Repetitive avalanche energy L=0.3mH B EAR mJ TA=25°C Power Dissipation PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Thermal Characteristics FET2 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State 73 22 2.0 2.0 1.3 1.3 °C -55 to 150 -55 to 150 Symbol RθJA RθJL Symbol Alpha & Omega Semiconductor, Ltd. W RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W www.aosmd.com AO4926 FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 ID(ON) TJ=125°C VGS=10V, ID=9.5A RDS(ON) TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=7A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=9.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Max 0.02 0.1 10 20 0.1 µA 1.8 2.4 V 11 13.5 17.1 21.3 13 16.0 mΩ 0.5 V 4 A 2574 pF 30 IDSS VGS(th) Typ V VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=9A VGS=10V, VDS=15V, RL=1.6Ω, RGEN=3Ω mA A 78 0.38 1980 VGS=0V, VDS=15V, f=1MHz Units mΩ S 317 pF 111 pF 1.3 2.0 33.0 43 15.0 20 Ω nC 5.3 nC 6.0 nC 5.5 ns 5.5 ns 27.0 ns 4.3 ns trr Body Diode Reverse Recovery Time IF=9.5A, dI/dt=300A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=9.5A, dI/dt=300A/µs 7 13 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4926 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 20 ID(A) ID (A) 60 15 40 10 VGS=3.5V 20 5 0 125° 0 0 1 2 3 4 1 5 1.5 VDS (Volts) 16 2.5 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V 14 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 12 VGS=10V 10 8 VGS=10V ID=9.5A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 1.0E+01 ID=9.5A 25 125°C 1.0E+00 125°C 20 IS (A) RDS(ON) (mΩ ) 25°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4926 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=15V ID=9.5A 6 Capacitance (pF) VGS (Volts) 8 4 Ciss 2000 1500 1000 Crss 2 500 0 Coss 0 0 5 10 15 20 25 30 35 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.0 90 100µs RDS(ON) limited 70 1ms 1.0 10s 1s DC 0.1 TJ(Max)=150°C TA=25°C 80 10ms Power (W) 10.0 ID (Amps) 30 100 10µs 60 50 40 30 TJ(Max)=150°C TA=25°C 20 10 0.0 0.01 0.1 1 VDS (Volts) 10 0 0.0001 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4926 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 0.8 VDS=24V 0.7 VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 0.6 0.5 10A 5A 0.4 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 DYNAMIC 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 20 2.5 trr (ns) 4 Irm (A) 125ºC di/dt=800A/us 12 25ºC Qrr 10 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 50 125ºC di/dt=800A/us Qrr (nC) 0 Irm 2 125ºC 9 1.5 trr S 0 25ºC 6 1 25ºC 25ºC 2 5 S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 25ºC 5 Qrr 4 3 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 25 30 2.5 25ºC 2 9 1.5 trr 25ºC 6 1 2 1 Irm 20 Is=20A 125ºC 12 trr (ns) Qrr (nC) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 S 0 3 0 0 200 0.5 S 125ºC 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AO4926 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max 0.002 1 30 VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 V TJ=55°C VGS=10V, ID=7.3A 5 1 VGS=4.5V, ID=6A 23.5 29 mΩ 48 mΩ VGS=2.5V, ID=5A 34.7 26 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.71 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.3A VGS=10V, VDS=15V, RL=2Ω, RGEN=6Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs IF=7.3A, dI/dt=100A/µs Body Diode Reverse Recovery Time mΩ S 1 V 2.8 A 1100 pF 88 pF 65 SWITCHING PARAMETERS Total Gate Charge Qg Qgd V 24 VDS=5V, ID=7.3A Rg 1.5 35 Forward Transconductance Reverse Transfer Capacitance nA 20 gFS Output Capacitance 100 28 TJ=125°C Static Drain-Source On-Resistance Coss µA A RDS(ON) Crss Units pF 0.95 1.5 Ω 10 12 nC 1.8 nC 3.75 nC 3.2 ns 3.5 ns 21.5 ns 2.7 ns 16.8 21 8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 1: June 2007 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4926 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 10 4 VGS=2V 0 0 0 1 2 3 4 5 0 VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 Normalized On-Resistance 1.8 VGS=4.5V RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics 30 25 20 VGS=10V 15 ID=6A VGS=4.5V 1.5 1.2 VGS=10V ID=7.3A 0.9 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1.0E+01 55 1.0E+00 50 ID=7.3A 1.0E-01 40 125°C IS (A) 45 35 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 RDS(ON) (mΩ ) 0.5 125°C 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 25°C OR USES AS CRITICAL 25 1.0E-04 MARKET. APPLICATIONS 20 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°COF ITS PRODUCTS. AOS RESERVES OUT OF SUCH APPLICATIONS OR USES 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4926 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=7.3A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 100µs 1ms 1.00 10s 1s DC 0.10 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) RDS(ON) limited 30 50 10µs 10.00 10 30 20 10 TJ(Max)=150°C TA=25°C 0 0.01 0.01 0.1 1 VDS (Volts) 10 0.0001 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR OR USES AS CRITICAL D D=T /TTHE CONSUMER MARKET.PAPPLICATIONS on COMPONENTS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS TJ,PK=T A+PDM.ZθJA.RθJA T OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS PRODUCT DESIGN, RθJA=62.5°C/WRESERVES THE RIGHT TOonIMPROVE T Single Pulse NOTICE. FUNCTIONS AND RELIABILITY WITHOUT 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com