AOSMD AO5800E

AO5800E
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO5800E uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SC89-6L footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
RoHS compliant
VDS (V) = 60V
ID = 0.4A (VGS = 10V)
RDS(ON) < 1.6Ω (VGS = 10V)
RDS(ON) < 1.9Ω (VGS = 4.5V)
ESD PROTECTED!
D2
D1
SC-89-6
G2
D1
S2
G1
G2
S1
D2
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A, F
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
1.6
0.4
W
0.24
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
0.3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
0.4
TA=25°C
Power Dissipation A
Maximum
60
RθJA
RθJL
Typ
275
360
300
Max
330
450
350
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO5800E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
1.6
TJ=55°C
5
VDS=0V, VGS=±10V
VDS=0V, VGS=±4.5V
nA
V
1.3
1.6
2.45
3
VGS=4.5V, ID=0.3A
1.5
1.9
TJ=125°C
A
Forward Transconductance
VDS=5V, ID=0.4A
0.5
VSD
Diode Forward Voltage
IS=0.1A,VGS=0V
Maximum Body-Diode Continuous Current
0.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
µA
2.5
gFS
Output Capacitance
±1
±100
Static Drain-Source On-Resistance
Coss
µA
1.6
VGS=10V, ID=0.4A
Crss
Units
V
VDS=48V, VGS=0V
Zero Gate Voltage Drain Current
IS
Max
60
IDSS
RDS(ON)
Typ
41
VGS=0V, VDS=30V, f=1MHz
VGS=10V, VDS=30V, RL=75Ω,
RGEN=3Ω
Ω
Ω
S
1
V
0.4
A
50
pF
9
pF
6
pF
39.2
ns
35.7
ns
261
ns
79
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=0.4A, dI/dt=100A/µs, VGS=-9V
11.3
Qrr
Body Diode Reverse Recovery Charge IF=0.4A, dI/dt=100A/µs, VGS=-9V
7.5
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 0: Aug 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5800E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
2
-40°C
6V
10V
VDS=5V
0.8
1.5
25°C
ID(A)
ID (A)
125°C
0.6
4.5V
1
0.4
4V
0.5
VGS=3.0V
0.2
3 5V
0
0
0
1
2
3
4
5
0
1
3
Normalized On-Resistance
2.5
RDS(ON) (Ω)
3
4
5
2.6
VGS=4.5V
2
VGS=10V
1.5
1
VGS=10V
ID=0.4A
2.2
1.8
VGS=4.5V
ID=0.3A
1.4
1.0
0.6
0
0.5
1
1.5
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+00
4
125°C
ID=0.4A
3.5
1.0E-01
125°C
IS (A)
3
RDS(ON) (Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
2.5
25°C
1.0E-02
-40°C
1.0E-03
2
25°C
1.0E-04
1.5
1.0E-05
1
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.4
0.8
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO5800E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10
VDS=30V
ID=0.4A
Ciss
50
Capacitance (pF)
VGS (Volts)
8
6
4
2
40
30
Coss
20
Crss
10
0
0
0.0
0.3
0.6
0.9
1.2
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10.00
30
40
50
60
14
TJ(Max)=150°C, T A=25°C
RDS(ON)
limited
10µs
12
100µs
10
1ms
10ms
0.1s
0.10
1s
10s
TJ(Max)=150°C
TA=25°C
8
6
4
DC
0.01
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
ID (Amps)
1.00
10
2
0
0.0001
0.00
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=330°C/W
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com