AOSMD AO9926E

AO9926E
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO9926E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO9926E is Pb-free (meets ROHS & Sony 259
specifications). AO9926EL is a Green Product
ordering option. AO9926E and AO9926EL are
VDS (V) = 20V
ID = 8A (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 4.5V)
RDS(ON) < 25mΩ (VGS = 2.5V)
RDS(ON) < 33mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
D2
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
S1
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Maximum
20
Units
V
±8
V
30
2
W
1.28
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6.4
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
S2
8
TA=25°C
Power Dissipation A
G2
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
AO9926E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
µA
VDS=0V, VGS=±8V
±10
µA
1
V
TJ=125°C
VGS=2.5V, ID=7A
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
21
25
30
21
25
mΩ
33
mΩ
29
0.76
mΩ
S
1
V
2.5
A
1160
pF
187
pF
146
pF
VGS=0V, VDS=0V, f=1MHz
1.5
Ω
16
nC
VGS=4.5V, VDS=10V, ID=8A
0.8
nC
3.8
nC
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
tD(on)
18
25
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
A
VDS=5V, ID=8A
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
0.6
VGS=1.8V, ID=6A
VSD
Output Capacitance
µA
±1
Forward Transconductance
Coss
5
VDS=0V, VGS=±4.5V
gFS
Crss
V
TJ=55°C
VGS=4.5V, ID=8A
IS
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=16V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=5V, VDS=10V, RL=1.25Ω,
RGEN=3Ω
6.2
ns
12.7
ns
51.7
ns
16
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
17.8
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
6.8
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO9926E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
8V
VGS=5V
VGS =2V
15
20
ID(A)
ID(A)
VGS =1.5V
10
10
125°C
5
VGS =1V
25°C
0
0
0
1
2
3
4
5
0.0
VDS(Volts)
0.5
1.0
Figure 1: On-Regions Characteristics
40
2.0
2.5
1.6
Normalize ON-Resistance
ID=8A
RDS(ON)(mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
VGS =1.8V
30
VGS =2.5V
20
VGS =4.5V
VGS=1.8V
1.4
VGS=2.5V
VGS=4.5V
1.2
1.0
10
0
5
10
15
20
0.8
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
60
ID=8A
1E+00
125°C
1E-01
40
IS(A)
RDS(ON)(mΩ)
50
125°C
30
1E-02
1E-03
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
8
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO9926E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
5
VDS=10V
ID=8A
1600
Capacitance (pF)
VGS(Volts)
4
3
2
Ciss
1200
800
Crss
400
1
0
0
0
5
10
15
0
20
TJ(Max)=150°C
TA=25°C
10
15
20
40
RDS(ON)
limited
10µs
1ms
0.1s
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
ID (Amps)
10.0
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
Coss
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000