AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications). AOD408L is a Green Product ordering option. AOD408 and AOD408L are electrically identical. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain Current G C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 18 IAR 18 A EAR 40 mJ 40 60 2.5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM Junction and Storage Temperature Range A ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B V 18 TC=25°C TC=100°C Pulsed Drain Current Units V RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD408 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=10A VDS=5V, ID=18A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Max 5 nA 1.8 2.5 V 13.6 18 18 24 20.6 27 A 25 0.75 VGS=10V, V DS=15V, ID=18A mΩ 1 V 18 A 1250 pF 180 0.7 mΩ S pF 110 VGS=0V, VDS=0V, f=1MHz µA 100 1040 VGS=0V, VDS=15V, f=1MHz Units V VDS=24V, V GS=0V IDSS IS Typ pF 0.85 Ω 19.8 25 nC 9.8 12.5 nC 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=0.82Ω, RGEN=3Ω 3.9 ns 17.4 ns 3.2 ns IF=18A, dI/dt=100A/µs 19 IF=18A, dI/dt=100A/µs 8 25 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 3: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 3.5V 20 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 24 1.6 VGS=4.5V VGS=10V Normalized On-Resistance 22 RDS(ON) (mΩ) 2.5 20 18 16 VGS=10V 14 12 10 0 5 10 15 20 ID=18A 1.4 VGS=4.5V 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 1.0E-01 ID=18A IS (A) RDS(ON) (mΩ) 40 30 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1250 Capacitance (pF) 8 VGS (Volts) 1500 VDS=15V ID=18A 6 4 Ciss 1000 750 500 2 Coss 250 0 0 4 8 12 16 Crss 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 10.0 1ms 10µs 10ms 0.1s 100µs 1s 1.0 10s T J(Max)=150°C T A=25°C DC 1 10 100 VDS (Volts) 1 30 30 20 0 0.001 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 25 10 0.1 0.1 20 T J(Max)=150°C T A=25°C 40 Power (W) RDS(ON) limited ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 T on Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000