AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1408 is Pb-free (meets ROHS & Sony 259 specifications). AOL1408L is a Green Product ordering option. AOL1408 and AOL1408L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) Ultra SO-8TM Top View D S Fits SOIC8 footprint ! Bottom tab connected to drain D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage G TC=25°C Continuous Drain Current B,G TC=100°C Maximum 30 Units V ±20 V 85 B ID IDM 73 A 200 Pulsed Drain Current Continuous Drain TA=25°C G Current TA=70°C C Avalanche Current IDSM IAR 14 30 A Repetitive avalanche energy L=0.1mH C EAR 45 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C 18 W 50 2.1 PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case C Alpha & Omega Semiconductor, Ltd. 100 PD W 1.3 -55 to 175 Symbol RθJA RθJC Typ 19.6 48 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W AOL1408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V VDS=24V, VGS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime tD(on) Turn-On Rise Time tr Turn-Off DelayTime tD(off) Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max 0.005 1 5 100 3 V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250μA VGS=10V, VDS=5V VGS=10V, ID=20A 1 200 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Units 1.8 3.2 4.3 4.9 85 0.7 4 5.2 6 6060 638 355 0.45 7000 96.4 46.4 13.6 15.6 15.7 14.2 55.5 14 31 24 115 55 1 85 0.6 21 21 75 21 38 29 μA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1. Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 VDS=5V 10V 50 50 4.5V 40 3.5V 30 ID(A) ID(A) 40 VGS=3V 20 20 10 25°C 10 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 0 5 1 6.0 Normalized On-Resistance VGS=4.5V 5.0 4.5 4.0 VGS=10V 3.5 3.0 2.5 2.0 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 4 ID=20A 1.6 1.4 VGS=4.5V VGS=10V 1.2 1 0.8 0 20 40 60 80 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 14 1.0E+02 ID=20A 1.0E+01 12 125°C 1.0E+00 IS (A) 10 RDS(ON) (mΩ) 1.5 1.8 5.5 RDS(ON) (mΩ) 125°C 30 TC=100°C TA=25°C 125°C 8 6 1.0E-01 1.0E-02 25°C 1.0E-03 25°C -55 to 175 4 1.0E-04 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOL1408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=15V ID=20A Capacitance (pF) VGS (Volts) 8 Ciss 7000 6 4 2 6000 5000 4000 3000 Coss 2000 Crss 1000 0 0 20 40 60 80 0 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=175°C TC=25°C 800 100μs RDS(ON) limited 10 Power (W) ID (Amps) 10 1000 10μs 1ms 10ms DC TJ(Max)=175°C TC=25°C 1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 600 400 200 0.1 ZθJC Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 0.00001 80 60 40 20 0 0.0001 0.001 0.01 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 100 80 80 60 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 100 40 20 60 40 20 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000