AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1704 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =50A (VGS = 10V) RDS(ON) < 7.8mΩ (VGS = 10V) RDS(ON) < 9.8mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage I TC=25°C Continuous Drain B Current ID IDM Pulsed Drain Current Avalanche Current C TC=25°C EAR Junction and Storage Temperature Range A Alpha & Omega Semiconductor, Ltd. A 94 mJ W 4.3 W 2.8 TJ, TSTG t ≤ 10s Steady-State Steady-State 25 25 -55 to 175 Symbol A A 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C A 14 PD TC=100°C TA=25°C Power Dissipation V 120 IDSM IAR C A ±12 18 TA=70°C Power Dissipation B Units V 43 TA=25°C Repetitive avalanche energy L=0.3mH Maximum 30 50 TC=100°C Continuous Drain H Current SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode RθJA RθJC Typ 24 53 2.4 °C Max 29 64 3.0 Units °C/W °C/W °C/W www.aosmd.com AOL1704 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, V GS=0V VDS=24V, V GS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=4.5V, VDS=5V 120 TJ=125°C SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1.8 2.4 V A 8 9.8 95 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance µA VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Diode Continuous Current I Gate resistance mA VGS=4.5V, ID=20A VSD Rg 20 11.5 Forward Transconductance Crss 0.1 5 9.2 gFS Output Capacitance 0.04 7.8 Static Drain-Source On-Resistance 0.36 2800 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=20A mΩ mΩ S 0.5 V 50 A 3640 pF 390 pF 145 VGS=0V, VDS=0V, f=1MHz Units V 6.5 RDS(ON) Coss Max 0.1 VGS=10V, ID=20A IS Typ pF 0.8 1.2 42 50 19 23 Ω nC 7 nC Qgd Gate Drain Charge 6 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 12 VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω 7 ns 31 ns 5 ns 16 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. I. The maximum current rating is limited by bond-wires. Rev1: Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 90 4.0V VDS=5V 25 4.5V 6V ID(A) ID (A) 20 3.5V 60 125° 15 25°C 10 30 VGS=3.0V 5 0 0 1 2 3 4 0 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 12 1.8 ID=20A Normalized On-Resistance 11 10 RDS(ON) (mΩ) 2 VGS=4.5V 9 8 7 6 VGS=10V 5 VGS=10V 1.6 1.4 VGS=4.5V 1.2 1 4 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 ID=20A 1.0E+01 14 125°C 1.0E+00 12 25°C 125°C IS (A) RDS(ON) (mΩ) 30 10 8 1.0E-01 1.0E-02 1.0E-03 6 25°C 1.0E-04 4 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4.50E-09 10 4.00E-09 3.50E-09 VDS=15V ID=20A 6 Capacitance (nF) VGS (Volts) 8 4 Ciss 3.00E-09 2.50E-09 2.00E-09 1.50E-09 Coss 1.00E-09 2 Crss 5.00E-10 0 0.00E+00 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 120 1000.0 110 10µs 100µs RDS(ON) limited 10.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 100 Power (W) ID (Amps) 100.0 90 80 70 60 50 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 40 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T C+PDM.ZθJc.RθJc RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TC=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 120 TC=150°C 60 40 20 50 40 30 20 10 0 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 0 1.0E-03 25 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 160 140 50 TJ(Max)=150°C TA=25°C 120 40 Power (W) Current rating ID(A) 50 30 20 100 80 60 40 10 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 0.001 0.00001 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=64°C/W Single Pulse 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 0.8 VSD(V) 1.0E-02 IR (A) VDS=24V 1.0E-03 VDS=12V 0.7 20A 0.6 10A 0.5 5A 0.4 0.3 1.0E-04 IS=1A 0.2 0.1 0 0 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 48 di/dt=1000A/us 25ºC 24 Qrr 9 125ºC 16 Irm (A) Qrr (nC) 12 6 Irm 8 25ºC 125ºC 10 trr (ns) 125ºC 2.40 di/dt=1000A/us 11 15 32 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 12 18 40 50 2.10 1.80 25ºC trr 9 1.50 8 1.20 7 25ºC S 0.90 6 0.60 5 3 0.30 125ºC 4 0 5 10 15 20 25 30 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 40 15 Is=20A 16 25ºC Qrr 8 3 trr (ns) 6 Irm (A) Qrr (nC) 125ºC 25 30 2.50 2.00 14 9 20 Is=20A 125ºC 25ºC 16 15 18 12 24 10 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 125ºC 32 5 25ºC 1.50 12 10 25ºC 8 125ºC S 0 0.00 0 0 S 1.0E-05 trr S 6 1.00 0.50 Irm 0 0 0 600 800 1000 1200 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt 200 400 Alpha & Omega Semiconductor, Ltd. 4 0 200 400 600 800 1000 0.00 1200 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com