AOSMD AOP601L

AOP601
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
-30V
VDS (V) = 30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28mΩ
< 35mΩ (VGS = -10V)
< 43mΩ
< 58mΩ (VGS = -4.5V)
Schottky
VDS=30V, I F=3A, VF<[email protected]
The AOP601 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
D2
PDIP-8
D1
K
S2
G2
S1/A
G1
1
2
3
4
D2
D2
D1/K
D1/K
8
7
6
5
P-ch
N-ch
G2
A
G1
S2
S1
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
Current A
TA=25°C
TA=70°C
Pulsed Drain Current
B
TA=25°C
TA=70°C
Power Dissipation
ID
IDM
PD
Max p-channel
-30
±20
7.5
-6.6
6
-5.3
30
-30
2.5
2.5
1.6
1.6
-55 to 150
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Parameter
Reverse Voltage
Continuous Forward
Current A
Symbol
VDS
Maximum Schottky
30
TA=25°C
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation
A
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
V
4
ID
IDM
PD
TJ, TSTG
2.7
A
20
2.5
1.6
-55 to 150
W
°C
AOP601
Thermal Characteristics: n-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics: p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
40
67
33
Max
50
80
40
Units
°C/W
°C/W
°C/W
Typ
38
66
30
Max
50
80
40
Units
°C/W
°C/W
°C/W
Typ
42
70
34
Max
50
80
40
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.
AOP601
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
Units
30
V
1
VDS=24V, VGS=0V
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7.5A
1.8
100
nA
3
V
A
22.6
28
33
43
TJ=125°C
VGS=4.5V, ID=6.0A
gFS
Forward Transconductance
VSD
IS
Schottky+ Body Diode Forward Voltage IS=1A
Maximum Body-Diode+Schottky Continuous Current
VDS=5V, ID=7.5A
12
µA
16
mΩ
mΩ
S
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance. (Schottky+FET)
Coss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7.5A
0.45
0.5
4
A
680
pF
102
pF
77
pF
3
Ω
13.84
nC
6.74
nC
1.82
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
4.6
ns
tr
Turn-On Rise Time
4.1
ns
tD(off)
Turn-Off DelayTime
20.6
ns
tf
Turn-Off Fall Time
5.2
ns
trr
Body Diode Reverse Recovery time
IF=7.5A, dI/dt=100A/µs
16.5
ns
Qrr
Body Diode Reverse Recovery charge
IF=7.5A, dI/dt=100A/µs
7.8
nC
VGS=10V, VDS=15V, RL=2.0Ω,
RGEN=6Ω
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.5
0.007
0.05
Irm
Maximum reverse leakage current
VR=30V
VR=30V, TJ=125°C
3.2
10
VR=30V, TJ=150°C
Junction Capacitance
VR=15V
12
37
20
CT
2
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
25
20
6V
5V
4.5V
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
10
8
125°C
4
VGS=3V
5
25°C
0
0
0
1
2
3
4
0
5
0.5
Normalized On-Resistance
1.6
50
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
1.7
60
VGS=4.5V
40
30
20
VGS=10V
VGS=10V
ID=7.5A
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
10
0
5
10
15
0.8
20
0
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
70
60
ID=7.5A
1.0E+00
50
IS Amps
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
40
30
125°C
1.0E-01
1.0E-02
25°C
25°C
20
1.0E-03
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
MOSFET+Schottky
1.0
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1000
10
VDS=15V
ID=7.5A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
Coss(FET+Schottky)
200
100
0
0
2
4
6
8
10
12
Crss
0
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
1ms
100µs
20
25
30
TJ(Max)=150°C
TA=25°C
30
10µs
10ms
0.1s
1
15
40
Power W
ID (Amps)
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000
AOP601
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-30
-5
VDS=0V, VGS=±20V
±100
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
-2.4
35
45
VGS=-4.5V, ID=-5A
44
58
VDS=-5V, ID=-6.6A
13
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6.6A
VGS=-10V, VDS=-15V, RL=2.3Ω,
RGEN=3Ω
µA
nA
V
A
37
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
-2
28
VGS=-10V, ID=-6.6A
Output Capacitance
Units
-1
TJ=55°C
ID(ON)
Coss
Max
V
VDS=-24V, VGS=0V
VGS(th)
IS
Typ
-0.76
mΩ
mΩ
S
-1
V
-4.2
A
920
pF
190
pF
122
pF
3.6
Ω
18.5
nC
9.6
nC
2.7
nC
4.5
nC
7.7
ns
5.7
ns
20.2
ns
9.5
ns
trr
Body Diode Reverse Recovery Time
IF=-6.6A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs
8.8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
-10V
25
VDS=-5V
25
20
20
-4V
-ID(A)
-ID (A)
30
-4.5V
-6V
-5V
15
10
-3.5V
10
15
5
5
VGS=-3V
125°C
25°C
0
0
0
0
1
2
3
4
0.5
5
1.5
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
1.6
ID=-6.6A
55
Normalized On-Resistance
VGS=-4.5V
50
RDS(ON) (mΩ)
1
45
40
35
30
VGS=-10V
25
20
15
1.4
VGS=-10V
VGS=-4.5V
1.2
1
10
0
5
10
15
20
25
0.8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
65
1.0E+00
ID=-6.6A
60
1.0E-01
125°C
1.0E-02
50
125°C
45
-IS (A)
RDS(ON) (mΩ)
55
1.0E-03
40
1.0E-04
35
25°C
30
25
25°C
1.0E-05
1.0E-06
0.0
20
3
4
5
7
8
9
10
-V6GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
1500
10
VDS=-15V
ID=-6.6A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
250
0
0
0
4
8
12
16
20
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
0.1s
1ms
10ms
1s
25
30
TJ(Max)=150°C
TA=25°C
20
10
10s
DC
0
0.001
0.1
0.1
20
30
Power (W)
RDS(ON)
limited
1.0
15
40
TJ(Max)=150°C, TA=25°C
10.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Crss
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000