AOP608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical. n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33mΩ (VGS=10V) < 46mΩ (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 PDIP-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 6.3 -5.5 ID 5 -4.4 IDM 20 -20 2.5 2.5 TA=70°C 1.6 1.6 Junction and Storage Temperature Range -55 to 150 -55 to 150 PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 37 74 28 p-ch p-ch p-ch 35 73 32 Units V V ±20 TA=25°C Continuous Drain Current A Max p-channel -40 A W °C Max Units 50 °C/W 90 °C/W 40 °C/W 50 90 40 °C/W °C/W °C/W AOP608 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 40 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.3A VGS=4.5V, ID=5A gFS Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=6.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 2.3 µA 100 nA 3 V A 24.1 TJ=125°C Units V VDS=32V, VGS=0V VSD Max 1 VGS(th) IS Typ 33 40 33.7 46 22 0.77 mΩ mΩ S 1 V 6.3 A 404 pF VGS=0V, VDS=30V, f=1MHz 95 pF 37 pF VGS=0V, VDS=0V, f=1MHz 2.7 Ω 9.2 nC 4.6 nC 1.6 nC VGS=10V, VDS=20V, ID=6.3A Qgs Gate Source Charge Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 4.3 ns tr Turn-On Rise Time 3.4 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=20V, RL=3Ω, RGEN=3Ω 15 ns 2.8 ns IF=6.3A, dI/dt=100A/µs 21.2 Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs 15.8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 20 5V 25 VDS=5V 4.5V 15 4V ID(A) ID (A) 20 15 125°C 10 10 VGS=3.5V 5 5 0 0 1 2 3 4 25°C 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 1.8 Normalized On-Resistance RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 50 40 VGS=4.5V 30 VGS=10V 20 0 5 10 15 VGS=10V ID=6.3A 1.6 VGS=4.5V ID=5A 1.4 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 1.0E+01 ID=6.3A 70 1.0E+00 60 125°C 1.0E-01 50 IS (A) RDS(ON) (mΩ) 3 125°C 40 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=30V ID= 6.3A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss Crss 200 0 0 0 2 4 6 8 0 10 100.0 30 100µs 10ms Power (W) ID (Amps) 40 TJ(Max)=150°C TA=25°C 10µs 10.0 1ms 1s 1.0 10s TJ(Max)=150°C TA=25°C 0.1s 20 10 DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 40 RDS(ON) limited 10 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP608 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5.5A TJ=125°C VGS=-4.5V, ID=-4.6A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-5.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -5 IGSS gFS Units V VDS=-32V, VGS=0V VSD Max -1 VGS(th) IS Typ -1.9 ±100 nA -3 V A 34.7 45 56 70 50.6 63 mΩ mΩ 12 -0.75 S -1 V -5.5 A 657 pF VGS=0V, VDS=-20V, f=1MHz 143 pF 63 pF VGS=0V, VDS=0V, f=1MHz 6.5 Ω 14.2 nC 7.1 nC 2.2 nC VGS=-10V, VDS=-20V, ID=-5.5A Qgs Gate Source Charge Qgd Gate Drain Charge 4.1 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime 26.5 ns tf Turn-Off Fall Time 11.5 ns trr Body Diode Reverse Recovery Time IF=-5.5A, dI/dt=100A/µs 21.9 Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/µs 14.9 ns nC VGS=-10V, VDS=-20V, RL=3.6Ω, RGEN=3Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The 2 A: Theinvalue R θJAapplication is measured with the mounted on board 1in FR-4 board with 2oz. Copper, a stillon airthe environment with T A =25°C. The value any of given depends ondevice the user's specific design. The current rating is in based t ≤ 10s thermal resistance value rating.in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. B: pulse width limitedimpedence by junctionfrom temperature. the sum of the thermal junction to lead RθJL and lead to ambient. C. Repetitive The R θJA israting, C. The The static R θJA ischaracteristics the sum of theinthermal from lead R lead duty to ambient. D. Figuresimpedence 1 to 6,12,14 arejunction obtainedtousing 80θJL µsand pulses, cycle 0.5% max. 2 using 80 µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. SOA1: curve a single pulse rating. Rev Aug provides 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -5V -10V 25 VDS=-5V -4.5V -6V 20 -4V 15 15 -ID(A) -ID (A) 20 -3.5V 10 10 VGS=-3V 5 1 2 3 25°C 5 0 0 125°C 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 60 Normalized On-Resistance 1.8 55 RDS(ON) (mΩ) 2 VGS=-4.5V 50 45 40 VGS=-10V 35 VGS=-10V ID=-5.5A 1.6 1.4 VGS=-4.5V ID=-4.6A 1.2 1 0.8 30 0 0 2 4 6 8 25 10 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 1.0E+01 140 1.0E+00 ID=-5.5A 120 125°C 1.0E-01 125°C 100 -IS (A) RDS(ON) (mΩ) 50 80 60 1.0E-02 1.0E-03 1.0E-04 40 25°C 25°C 1.0E-05 20 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1000 VDS=-30V ID=-5.5A 800 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 600 400 Coss 200 0 0 5 10 Crss 0 15 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 10.0 30 10ms Power (W) ID (Amps) 100µs 1ms 1s 1.0 TJ(Max)=150°C TA=25°C 10s 0.1s 20 10 DC 0.1 0.1 10 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000