AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). AOT424L is a Green Product ordering option. AOT424 and AOT424L are electrically identical. VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) TO-220 D G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B ±20 V Junction and Storage Temperature Range 200 IAR 30 A 112 mJ EAR 100 W 50 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 88 ID IDM PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Case Units V 110 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJC Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W AOT424 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V TJ=55°C 5 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 110 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge A VGS=4.5V, ID=30A 4.3 5.5 VDS=5V, ID=30A 106 DYNAMIC PARAMETERS Ciss Input Capacitance Rg V 4 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 3 6 Forward Transconductance Output Capacitance nA 3 VSD Crss 2 0.72 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=30A µA 100 4.7 TJ=125°C gFS Units V 1 ID(ON) Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ mΩ mΩ S 1 V 85 A 3840 pF 590 pF 414 pF 0.54 0.7 Ω 59.6 72 nC 30.4 37 nC 9.5 nC Qgd Gate Drain Charge 19.8 nC tD(on) Turn-On DelayTime 12.5 ns tr Turn-On Rise Time 35.5 ns tD(off) Turn-Off DelayTime 40 ns tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.5Ω, RGEN=3Ω 32.5 trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 35.3 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 30.7 ns 42 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V VDS=5V 50 50 4.0V 40 125°C ID(A) ID (A) 40 30 3.5V 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 5 1.8 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 2.5 4 3 VGS=10V 2 VGS=10V ID=30A 1.6 1.4 VGS=4.5V ID=30A 1.2 1 0.8 0 10 20 30 40 50 60 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 10 ID=30A 1.0E+01 125°C 8 125°C 6 IS (A) RDS(ON) (mΩ) 1.0E+00 4 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=30A 4000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 1ms 20 25 30 80 10ms 0.1s 10 TJ(Max)=175°C TA=25°C 100µs Power (W) ID (Amps) 15 100 10µs 1s 60 40 10s TJ(Max)=175°C TA=25°C 20 DC 0.1 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 1 5 1 10 100 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOT424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 40 tA = 20 0 0.00001 L ⋅ ID BV − V DD 0.001 0.01 60 40 20 100 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 120 Current rating ID(A) 80 0 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175