AOU405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications. Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications). AOU405L is a Green Product ordering option. AOU405 and AOU405L are electrically identical. VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A -18 IAR -18 A EAR 40 mJ -40 60 2.5 W 1.6 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 30 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V -18 TA=100°C G Repetitive avalanche energy L=0.1mH Maximum -30 RθJA RθJC Typ 16.7 40 1.8 Max 25 50 2.5 Units °C/W °C/W °C/W AOU405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 VDS=-24V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 VGS=-10V, ID=-18A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-18A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -0.003 -1 V ±100 nA -2.4 V 28 34 40 47 48 60 mΩ -1 V -18 A 1100 pF A 17 -0.76 VGS=-10V, VDS=-15V, ID=-18A mΩ S 190 pF 122 VGS=0V, VDS=0V, f=1MHz µA -2 920 VGS=0V, VDS=-15V, f=1MHz Units -5 VGS(th) IS Max TJ=55°C IGSS RDS(ON) Typ pF 4.5 Ω 18.7 23 nC 9.7 11.7 nC 3.6 Qgs Gate Source Charge Qgd Gate Drain Charge 5.4 tD(on) Turn-On DelayTime 9 13 ns tr Turn-On Rise Time 25 35 ns 20 30 ns 12 18 ns 21.4 26 16 ns nC VGS=-10V, VDS=-15V, RL=0.82Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs IF=-18A, dI/dt=100A/µs 2.54 13 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. I. Revision 0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 -10V -6V VDS=-5V 25 -4.5V 30 -ID(A) -ID (A) 20 -4V 20 -3.5V 15 10 10 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 100 1.60 Normalized On-Resistance 90 VGS=-4.5V 80 RDS(ON) (mΩ) 1 70 60 50 40 VGS=-10V 30 VGS=-4.5V 1.40 ID=-10A VGS=-10V 1.20 ID=-18A 1.00 0.80 20 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 120 1.0E+00 100 ID=-18A 1.0E-01 125°C 125°C 60 40 -IS (A) RDS(ON) (mΩ) 80 1.0E-02 1.0E-03 1.0E-04 25°C 20 25°C 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-18A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 400 TJ(Max)=175°C, TA=25°C TJ(Max)=175°C TA=25°C 10µs RDS(ON 300 1ms ) Power (W) 100.0 -ID (Amps) Crss 250 10ms 1.0 100 DC 0.1 0.1 1 200 10 100 -VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 16 tA = 12 Power Dissipation (W) ID(A), Peak Avalanche Current 20 L ⋅ ID BV − V DD 8 TA=25°C 4 0 0.00001 0.001 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 T CASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 T CASE (°C) Figure 13: Power De-rating (Note B) 20 Current rating ID(A) 40 0 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 60 175 175