AOSMD AP30G120SW

AP30G120SW
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High speed switching
VCES
▼ Low Saturation Voltage
VCE(sat)[email protected]=30A
IC
1200V
30A
C
▼ CO-PAK, IGBT with FRD
▼ RoHS Compliant
G
TO-3P
C
G
E
Absolute Maximum Ratings
E
Parameter
Symbol
Rating
Units
VCES
Collector-Emitter Voltage
1200
V
VGE
Gate-Emitter Voltage
±30
V
[email protected]=25℃
Continuous Collector Current
60
A
[email protected]=100℃
Continuous Collector Current
30
A
ICM
Pulsed Collector Current1
160
A
[email protected]=100℃
Diode Continunous Forward Current
12
A
IFM
Diode Pulse Forward Current
75
A
[email protected]=25℃
Maximum Power Dissipation
208
W
℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
℃
TL
Maximum Lead Temp. for Soldering Purposes
300
℃
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Parameter
Symbol
Value
Units
Rthj-c(IGBT)
Thermal Resistance Junction-Case
0.6
℃/W
Rthj-c(Diode)
Thermal Resistance Junction-Case
1.6
℃/W
Rthj-a
Thermal Resistance Junction-Ambient
40
℃/W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVCES
Parameter
Collect-to-Emitter Breakdown Voltage
Test Conditions
VGE=0V, IC=250uA
Min.
1200
Typ.
-
Max.
-
Units
V
IGES
Gate-to-Emitter Leakage Current
VGE=±30V, VCE=0V
-
-
±500
nA
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
-
3
3.6
V
VGE=15V, IC=60A
-
3.8
-
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=1mA
3
4.4
7
V
Qg
Total Gate Charge
IC=30A
-
55
88
nC
Qge
Gate-Emitter Charge
VCC=500V
-
12
-
nC
Qgc
Gate-Collector Charge
-
27
-
nC
td(on)
Turn-on Delay Time
-
20
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-off Delay Time
-
65
-
ns
tf
Fall Time
VGE=15V
VCC=600V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
-
200
300
ns
Eon
Turn-On Switching Loss
-
1.8
-
mJ
Eoff
Turn-Off Switching Loss
-
1.1
-
mJ
Cies
Input Capacitance
VGE=0V
-
1320
2110
pF
Coes
Output Capacitance
VCE=30V
-
105
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
V
Electrical Characteristics of [email protected]=25℃(unless otherwise specified)
VF-1
Forward Voltage
IF=10A
-
1.7
2
VF-2
Forward Voltage
IF=20A
-
1.8
2.4
V
trr
Reverse Recovery Time
IF=10A
-
80
-
ns
Qrr
Reverse Recovery Charge
di/dt = 100 A/µs
-
22
-
nC
Data and specifications subject to change without notice
200630061-1/3
AP30G120SW
160
100
20V
18V
15V
20V
18V
15V
12V
o
T C =150 C
80
IC , Collector Current (A)
IC , Collector Current (A)
T C =25 o C
120
12V
80
V GE =10V
40
60
V GE =10V
40
20
0
0
0
3
6
9
0
12
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
160
6
V GE = 15 V
VCE(sat) ,Saturation Voltage(V)
V GE =15V
140
IC , Collector Current(A)
3
V CE , Collector-Emitter Voltage (V)
120
T C =25 ℃
100
T C =150 ℃
80
60
40
5
I C = 60 A
4
I C =30A
3
2
20
0
1
0
2
4
6
8
10
12
0
40
80
120
160
Junction Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
10000
C ies
Capacitance (pF)
Normalized VGE(th) (V)
1.4
1.1
C oes
100
0.8
C res
1
0.5
-50
0
50
100
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
150
1
10
100
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2/3
AP30G120SW
1
1000
Normalized Thermal Response (Rthjc)
V GE =15V
IC, Peak Collector Current(A)
T C =125 o C
100
10
Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V CE , Collector-Emitter Voltage(V)
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
20
20
TC=150oC
15
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
10
I C = 60 A
5
I C = 30 A
I C = 15 A
0
15
10
I C = 60 A
5
I C = 30 A
I C = 15 A
0
0
4
8
12
16
20
0
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
8
12
16
20
Fig 10. Saturation Voltage vs. VGE
20
VGE , Gate -Emitter Voltage (V)
15
IF , Forward Current (A)
4
V GE , Gate-Emitter Voltage(V)
10
o
o
T j =150 C
T j =25 C
5
0
I C = 3 0A
V CC =200V
V CC =300V
V CC =500V
16
12
8
4
0
0
0.4
0.8
1.2
1.6
2
V F , Forward Voltage (V)
Fig11. Forward Characteristic of
2.4
0
20
40
60
80
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
Diode
3/3