AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant G TO-3P C G E Absolute Maximum Ratings E Parameter Symbol Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-Emitter Voltage ±30 V IC@TC=25℃ Continuous Collector Current 60 A IC@TC=100℃ Continuous Collector Current 30 A ICM Pulsed Collector Current1 160 A IF@TC=100℃ Diode Continunous Forward Current 12 A IFM Diode Pulse Forward Current 75 A PD@TC=25℃ Maximum Power Dissipation 208 W ℃ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ℃ TL Maximum Lead Temp. for Soldering Purposes 300 ℃ , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature . Thermal Data Parameter Symbol Value Units Rthj-c(IGBT) Thermal Resistance Junction-Case 0.6 ℃/W Rthj-c(Diode) Thermal Resistance Junction-Case 1.6 ℃/W Rthj-a Thermal Resistance Junction-Ambient 40 ℃/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVCES Parameter Collect-to-Emitter Breakdown Voltage Test Conditions VGE=0V, IC=250uA Min. 1200 Typ. - Max. - Units V IGES Gate-to-Emitter Leakage Current VGE=±30V, VCE=0V - - ±500 nA ICES Collector-Emitter Leakage Current VCE=1200V, VGE=0V - - 1 mA VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A - 3 3.6 V VGE=15V, IC=60A - 3.8 - V VGE(th) Gate Threshold Voltage VCE=VGE, IC=1mA 3 4.4 7 V Qg Total Gate Charge IC=30A - 55 88 nC Qge Gate-Emitter Charge VCC=500V - 12 - nC Qgc Gate-Collector Charge - 27 - nC td(on) Turn-on Delay Time - 20 - ns tr Rise Time - 20 - ns td(off) Turn-off Delay Time - 65 - ns tf Fall Time VGE=15V VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load - 200 300 ns Eon Turn-On Switching Loss - 1.8 - mJ Eoff Turn-Off Switching Loss - 1.1 - mJ Cies Input Capacitance VGE=0V - 1320 2110 pF Coes Output Capacitance VCE=30V - 105 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 9 - pF V Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VF-1 Forward Voltage IF=10A - 1.7 2 VF-2 Forward Voltage IF=20A - 1.8 2.4 V trr Reverse Recovery Time IF=10A - 80 - ns Qrr Reverse Recovery Charge di/dt = 100 A/µs - 22 - nC Data and specifications subject to change without notice 200630061-1/3 AP30G120SW 160 100 20V 18V 15V 20V 18V 15V 12V o T C =150 C 80 IC , Collector Current (A) IC , Collector Current (A) T C =25 o C 120 12V 80 V GE =10V 40 60 V GE =10V 40 20 0 0 0 3 6 9 0 12 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 6 9 12 Fig 2. Typical Output Characteristics 160 6 V GE = 15 V VCE(sat) ,Saturation Voltage(V) V GE =15V 140 IC , Collector Current(A) 3 V CE , Collector-Emitter Voltage (V) 120 T C =25 ℃ 100 T C =150 ℃ 80 60 40 5 I C = 60 A 4 I C =30A 3 2 20 0 1 0 2 4 6 8 10 12 0 40 80 120 160 Junction Temperature ( o C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz 10000 C ies Capacitance (pF) Normalized VGE(th) (V) 1.4 1.1 C oes 100 0.8 C res 1 0.5 -50 0 50 100 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 150 1 10 100 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2/3 AP30G120SW 1 1000 Normalized Thermal Response (Rthjc) V GE =15V IC, Peak Collector Current(A) T C =125 o C 100 10 Safe Operating Area 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V CE , Collector-Emitter Voltage(V) 0.01 0.1 1 t , Pulse Width (s) Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal Impedance 20 20 TC=150oC 15 VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) o T C =25 C 10 I C = 60 A 5 I C = 30 A I C = 15 A 0 15 10 I C = 60 A 5 I C = 30 A I C = 15 A 0 0 4 8 12 16 20 0 V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE 8 12 16 20 Fig 10. Saturation Voltage vs. VGE 20 VGE , Gate -Emitter Voltage (V) 15 IF , Forward Current (A) 4 V GE , Gate-Emitter Voltage(V) 10 o o T j =150 C T j =25 C 5 0 I C = 3 0A V CC =200V V CC =300V V CC =500V 16 12 8 4 0 0 0.4 0.8 1.2 1.6 2 V F , Forward Voltage (V) Fig11. Forward Characteristic of 2.4 0 20 40 60 80 Q G , Gate Charge (nC) Fig 12. Gate Charge Characterisitics Diode 3/3