APEX PB51A

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FEATURES
• WIDE SUPPLY RANGE — ±15V to ±150V
• HIGH OUTPUT CURRENT —
1.5A Continuous (PB51), 2.0A Continuous (PB51A)
• VOLTAGE AND CURRENT GAIN
• HIGH SLEW —
50V/µs Minimum (PB51)
75V/µs Minimum (PB51A)
• PROGRAMMABLE OUTPUT CURRENT LIMIT
• HIGH POWER BANDWIDTH — 320 kHz Minimum
• LOW QUIESCENT CURRENT — 12mA Typical
• EVALUATION KIT — EK29
12-PIN SIP
PACKAGE STYLE DP
Formed leads available. See package styles ED & EE
APPLICATIONS
• HIGH VOLTAGE INSTRUMENTATION
• ELECTROSTATIC TRANSDUCERS & DEFLECTION
• PROGRAMMABLE POWER SUPPLIES UP TO 280V P-P
EQUIVALENT SCHEMATIC
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DESCRIPTION
The PB51 is a high voltage, high current amplifier designed
to provide voltage and current gain for a small signal, general
purpose op amp. Including the power booster within the feedback loop of the driver amplifier results in a composite amplifier
with the accuracy of the driver and the extended output voltage
range and current capability of the booster. The PB51 can also
be used without a driver in some applications, requiring only
an external current limit resistor to function properly.
The output stage utilizes complementary MOSFETs, providing symmetrical output impedance and eliminating second
breakdown limitations imposed by Bipolar Transistors. Internal
feedback and gainset resistors are provided for a pin-strapable
gain of 3. Additional gain can be achieved with a single external
resistor. Compensation is not required for most driver/gain
configurations, but can be accomplished with a single external
capacitor. Enormous flexibility is provided through the choice
of driver amplifier, current limit, supply voltage, voltage gain,
and compensation.
This hybrid circuit utilizes a beryllia (BeO) substrate, thick
film resistors, ceramic capacitors and semiconductor chips to
maximize reliability, minimize size and give top performance.
Ultrasonically bonded aluminum wires provide reliable interconnections at all operating temperatures. The 12-pin Power
SIP package is electrically isolated.
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EXTERNAL CONNECTIONS
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TYPICAL APPLICATION
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APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL [email protected]
1
PB51 • PB51A
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at TC = 25°C1
INPUT VOLTAGE, referred to COM
TEMPERATURE, pin solder—10s max.
TEMPERATURE, junction1
TEMPERATURE RANGE, storage
OPERATING TEMPERATURE RANGE, case
SPECIFICATIONS
PARAMETER
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
POWER SUPPLY
VOLTAGE, ±VS4
CURRENT, quiescent
THERMAL
RESISTANCE, AC junction to case5
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
TEST CONDITIONS2
MIN
Full temperature range3
25
3
AV = 3
AV = 10
f = 10kHz, AVCL = 10, CC = 22pF
f = 200kHz, AVCL = 10, CC = 22pF
Io = 1.5A (PB58), 2A (PB58A)
Io = 1A
Io = .1A
Full temperature range
Full temperature range
RL = 100, 2V step
VC = 100 Vpp
CC = 22pF, AV = 25, Vcc = ±100
CC = 22pF, AV = 3, Vcc = ±30
Full temperature range
VS = ±15
VS = ±60
VS = ±150
Full temp. range, f > 60Hz
Full temp. range, f < 60Hz
Full temperature range
Meets full range specifications
VS–11
VS–10
VS–8
1.5
50
160
±156
–25
PB51
TYP
±.75
–4.5
50
3
10
±10
±15
10
60
MAX
300V
2.0A
83W
±15V
260°C
175°C
–40 to +85°C
–25 to +85°C
MIN
±1.75
–7
*
25
±15
±25
VS –8
VS –7
VS –5
*
PB51A
TYP
*
*
*
*
*
*
*
*
*
MAX
UNITS
±1.0
*
V
mV/°C
k
pF
V/V
%
%
°
°
*
*
*
VS–15 VS–11
*
*
*
*
2.0
75
*
*
*
240
*
*
*
100
2200
2
320
100
1
±60
11
12
14
±150
1.2
1.6
30
25
1.3
1.8
*
18
85
*
*
*
*
*
*
*
*
*
V
V
V
A
V/µs
pF
µs
kHz
kHz
MHz
*
*
*
*
*
V
mA
mA
mA
°C/W
°C/W
°C/W
°C
NOTES: * The specification of PB51A is identical to the specification for PB51 in applicable column to the left.
1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, TC = 25°C unless otherwise noted.
3. Guaranteed by design but not tested.
4. +VS and –VS denote the positive and negative supply rail respectively.
5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
6. +VS/–VS must be at least 15V above/below COM.
CAUTION
The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to
temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
2
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TYPICAL PERFORMANCE
GRAPHS
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PB51 • PB51A
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APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL [email protected]
3
PB51 • PB51A
OPERATING
CONSIDERATIONS
GENERAL
STABILITY
Please read Application Note 1 "General Operating Considerations" which covers stability, supplies, heat sinking, mounting,
current limit, SOA interpretation, and specification interpretation. Visit www.apexmicrotech.com for design tools that help
automate tasks such as calculations for stability, internal power
dissipation, current limit; heat sink selection; Apex’s complete
Application Notes library; Technical Seminar Workbook; and
Evaluation Kits.
Stability can be maximized by observing the following
guidelines:
1. Operate the booster in the lowest practical gain.
2. Operate the driver amplifier in the highest practical effective
gain.
3. Keep gain-bandwidth product of the driver lower than the
closed loop bandwidth of the booster.
4. Minimize phase shift within the loop.
A good compromise for (1) and (2) is to set booster gain from
3 to 10 with total (composite) gain at least a factor of 3 times
booster gain. Guideline (3) implies compensating the driver
as required in low composite gain configurations. Phase shift
within the loop (4) is minimized through use of booster and loop
compensation capacitors Cc and Cf when required. Typical
values are 5pF to 33pF.
Stability is the most difficult to achieve in a configuration where
driver effective gain is unity (ie; total gain = booster gain). For
this situation, Table 1 gives compensation values for optimum
square wave response with the op amp drivers listed.
CURRENT LIMIT
For proper operation, the current limit resistor (RCL) must be
connected as shown in the external connection diagram. The
minimum value is 0.33 with a maximum practical value of 47.
For optimum reliability the resistor value should be set as high
as possible. The value is calculated as follows:
+IL=.65/RCL+ .010, -IL = .65/RCL.
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SAFE OPERATING AREA
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NOTE: The output stage is protected against transient flyback.
However, for protection against sustained, high energy flyback, external fast-recovery diodes should be used.
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COMPOSITE AMPLIFIER CONSIDERATIONS
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Cascading two amplifiers within a feedback loop has many
advantages, but also requires careful consideration of several
amplifier and system parameters. The most important of these
are gain, stability, slew rate, and output swing of the driver.
Operating the booster amplifier in higher gains results in a
higher slew rate and lower output swing requirement for the
driver, but makes stability more difficult to achieve.
GAIN SET
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FIGURE 2. NON-INVERTING COMPOSITE AMPLIFIER.
SLEW RATE
The slew rate of the composite amplifier is equal to the slew
rate of the driver times the booster gain, with a maximum value
equal to the booster slew rate.
OUTPUT SWING
The booster’s closed-loop gain is given by the equation
above. The composite amplifier’s closed loop gain is determined
by the feedback network, that is: –Rf/Ri (inverting) or 1+Rf/Ri
(non-inverting). The driver amplifier’s “effective gain” is equal
to the composite gain divided by the booster gain.
Example: Inverting configuration (figure 1) with
R i = 2K, R f = 60K, R g = 0 :
Av (booster) = (6.2K/3.1K) + 1 = 3
Av (composite) = 60K/2K = – 30
Av (driver) = – 30/3 = –10
The maximum output voltage swing required from the driver
op amp is equal to the maximum output swing from the booster
divided by the booster gain. The Vos of the booster must also
be supplied by the driver, and should be subtracted from the
available swing range of the driver. Note also that effects of
Vos drift and booster gain accuracy should be considered when
calculating maximum available driver swing.
This data
sheet has been carefullyCORPORATION
checked and is believed
to beNORTH
reliable, however,
no responsibility
is assumed for
possible inaccuracies
omissions.
All specifications are
subject to 1change
without
notice.
APEX
MICROTECHNOLOGY
• 5980
SHANNON
ROAD • TUCSON,
ARIZONA
85741 •orUSA
• APPLICATIONS
HOTLINE:
(800)
546-2739
4
PB51U REV D OCTOBER 2004 © 2004 Apex Microtechnology Corp.