A-POWER AP01L60AT

AP01L60AT
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
12Ω
ID
G
160mA
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
G
D
TO-92
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
160
mA
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
100
mA
1
IDM
Pulsed Drain Current
300
mA
[email protected]=25℃
Total Power Dissipation
0.83
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Max.
Value
Unit
150
℃/W
200315072-1/4
AP01L60AT
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
600
-
-
V
-
0.8
-
V/℃
VGS=10V, ID=0.5A
-
-
12
Ω
VDS=VGS, ID=250uA
2
-
4
V
VDS=10V, ID=0.5A
-
0.8
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=0.1A
-
6.0
10
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=1mA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.5
-
nC
VDD=300V
-
6.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
160
mA
IS=160mA, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
AP01L60AT
1.5
1
10V
6.0V
5.5V
5.0V
ID , Drain Current (A)
T A =25 C
0.75
1
0.5
10V
5.0V
T A =150 o C
ID , Drain Current (A)
o
V GS =4.5V
4.5V
0.5
V GS =4.0V
0.25
0
0
0
12
24
36
0
V DS , Drain-to-Source Voltage (V)
10
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =0.5A
V GS =10V
2.4
2
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
-50
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
100
150
v.s. Junction Temperature
4
1
3
VGS(th) (V)
10
IS (A)
50
Fig 4. Normalized On-Resistance
Temperature
T j = 150 o C
0
T j , Junction Temperature ( o C )
o
T j = 25 C
2
0.1
1
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP01L60AT
f=1.0MHz
1000
12
Ciss
I D =0.1A
V DS =480V
100
C (pF)
VGS , Gate to Source Voltage (V)
16
8
Coss
10
4
Crss
0
1
0
2
4
6
8
1
10
19
28
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
0.2
0.6
PD (W)
ID , Drain Current (A)
0.8
0.15
0.1
0.4
0.05
0.2
0
0
25
50
75
100
125
T A , Case Temperature (
o
150
0
50
Fig 9. Maximum Drain Current v.s.
100
T A , Case Temperature (
C)
150
o
C)
Fig 10. Typical Power Dissipation
Case Temperature
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4