A-POWER AP04N70BI

AP04N70BI
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
2.4Ω
ID
G
4A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
4
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
2.5
A
15
A
33
W
0.26
W/℃
100
mJ
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
4
A
EAR
Repetitive Avalanche Energy
4
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data & specifications subject to change without notice
200302072-1/6
AP04N70BI
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
2.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=4A
-
16.7
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
23.8
-
ns
tf
Fall Time
RD=75Ω
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=4A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature
o
2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/6
AP04N70BI
2.5
2
T C =25 o C
T C =150 o C
V G =10V
V G =10V
2
V G =6.0V
1.5
V G =5.0V
V G =5.0V
ID , Drain Current (A)
ID , Drain Current (A)
V G =6.0V
1.5
V G =4.5V
1
V G =4.5V
1
V G =4.0V
0.5
0.5
V G =4.0V
V G =3.5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =2A
2.4
V G =10V
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0.8
0
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
AP04N70BI
4.5
40
4
3.5
3
2.5
PD (W)
ID , Drain Current (A)
30
2
20
1.5
10
1
0.5
0
0
25
50
75
100
125
T c , Case Temperature (
o
0
150
50
100
T c , Case Temperature (
C)
Fig 5. Maximum Drain Current v.s.
150
o
C)
Fig 6. Typical Power Dissipation
Case Temperature
1
10
ID (A)
100us
1
1ms
10ms
100ms
0.1
1s
Normalized Thermal Response (R thjc)
100
DUTY=0.5
0.2
0.1
0.1
0.05
t
0.01
DC
o
T c =25 C
Single Pulse
PDM
0.02
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
0.01
1
10
100
V DS (V)
Fig 7. Maximum Safe Operating Area
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4/6
AP04N70BI
f=1.0MHz
16
10000
I D =4A
12
V DS =320V
Ciss
V DS =400V
10
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
4
Crss
2
0
1
0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
100
4
10
T j =150 o C
T j = 25 o C
IS (A)
VGS(th) (V)
3
2
1
1
0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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AP04N70BI
VDS
RD
VDS
D
RG
90%
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6/6