A-POWER AP10N60W

AP10N60W
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
0.75Ω
ID
G
10A
S
Description
AP10N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The
TO-3P type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
10
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
5.8
A
36
A
156
W
50
mJ
10
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
0.8
℃/W
40
℃/W
1
200803181
AP10N60W
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
600
-
-
V
VGS=10V, ID=4A
-
-
0.75
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
3.8
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=8A
-
45
72
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
16
-
ns
tr
Rise Time
ID=4A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=4.7V
-
48
-
ns
tf
Fall Time
RD=75Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
2380 3800
pF
Coss
Output Capacitance
VDS=15V
-
475
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4.3
-
pF
Min.
Typ.
Tj=25℃, IS=8A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
550
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP10N60W
20
10
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
16
8
10V
6.0V
5.0V
6
V G = 4. 5 V
T C =150 o C
10V
6.0V
12
8
5.0V
4
2
4
V G =4.5V
0
0
0
5
10
15
0
20
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.3
I D =4A
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.2
1.1
1
2
1.6
1.2
0.9
0.8
25
0.8
-50
0
50
100
50
75
100
125
150
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
10
1.4
IS (A)
T j = 150 o C
Normalized VGS(th) (V)
1.2
T j = 25 o C
1
1
0.8
0.6
0.4
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10N60W
f=1.0MHz
10000
C iss
12
I D =8A
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
100
4
C rss
0
1
0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
ID (A)
100us
1ms
1
10ms
100ms
DC
T c =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-3P
E
A
Millimeters
SYMBOLS
φ
c1
D
D1
b1
b2
MIN
NOM
MAX
A
4.50
4.80
5.10
b
b1
b2
c
c1
0.90
1.00
1.30
1.80
2.50
3.20
1.30
--
2.30
0.40
0.60
0.90
1.40
--
2.20
D
19.70
20.00
20.30
D1
14.70
15.00
15.30
E
15.30
--
16.10
e
4.45
5.45
6.45
L
17.50
--
20.50
φ
3.00
3.20
3.40
L
c
1.All Dimensions Are in Millimeters.
b
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-3P
Part Number
Package
10N60W
LOGO
YWWSSS
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW:Week
SSS :Sequence
5