AP15N03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
30V
RDS(ON)
80mΩ
ID
G
15A
S
Description
G D
S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03GJ) is available for low-profile applications.
G
D
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
± 20
15
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1
A
9
A
50
A
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
28
W
Linear Derating Factor
0.22
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.8
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200227032
AP15N03GH/J
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
-
-
80
mΩ
VGS=4.5V, ID=6A
-
-
100
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=18A
-
16
-
S
VDS=30V, VGS=0V
`
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
ID=8A
-
-
±100
nA
-
4.6
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.1
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
3
nC
VDS=15V
-
4.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=8A
-
22.5
-
ns
td(off)
Turn-off Delay Time
RG=3.4Ω,VGS=10V
-
12.2
-
ns
tf
Fall Time
RD=1.9Ω
-
3.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
160
-
pF
Coss
Output Capacitance
VDS=25V
-
107
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
32
-
pF
Min.
Typ.
-
-
15
A
-
-
50
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Tj=25℃, IS=15A, VGS=0V
Max. Units
AP15N03GH/J
40
50
T C =150 o C
T C =25 o C
V G =10V
V G =10V
40
V G =8.0V
ID , Drain Current (A)
ID , Drain Current (A)
30
V G =8.0V
30
V G =6.0V
20
V G =6.0V
20
10
10
V G =4.0V
V G =4.0V
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
1.8
I D =8A
I D =8A
Normalized R DS(ON)
RDS(ON) (mΩ )
V G =10V
1.6
T C =25 o C
80
70
60
1.4
1.2
1.0
50
0.8
40
0.6
2
3
4
5
6
7
8
9
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
11
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
20
40
15
30
PD (W)
ID , Drain Current (A)
AP15N03GH/J
20
10
10
5
0
0
25
50
75
100
125
0
150
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thjc)
DUTY=0.5
ID (A)
10us
10
100us
1ms
T c =25 o C
Single Pulse
10ms
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
DC
1
0.01
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP15N03GH/J
f=1.0MHz
16
1000
I D =8A
VGS , Gate to Source Voltage (V)
14
V DS =16V
12
V DS =20V
V DS =24V
Ciss
C (pF)
10
8
Coss
100
6
4
Crss
2
0
0
1
2
3
4
5
6
7
8
9
10
10
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
VGS(th) (V)
IS (A)
T j =150 o C
T j =25 o C
1
1
0
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP15N03GH/J
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q