A-POWER AP20G45EJ

AP20G45EH/J
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Description
G
* High Input Impedance
* High Pick Current Capability
* 4.5V Gate Drive
* Strobe Flash Applications
C
E
VCES
450V
ICP
130A
TO-252(H)
C
G
G
C
E
TO-251(J)
E
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
450
V
Gate-Emitter Voltage
±6
V
Pulsed Gate-Emitter Voltage
±8
V
ICP
Pulsed Collector Current
130
A
[email protected]=25℃
Maximum Power Dissipation
20
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
VCES
VGE
IGEP
Electrical [email protected]=25oC(unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Units
-
-
10
uA
IGES
Gate-Emitter Leakage Current
Test Conditions
VGE=6V, VCE=0V
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
-
-
10
uA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=4.5V, ICP=130A (Pulsed)
-
5
8
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
-
-
1.2
V
Qg
Total Gate Charge
IC=40A
-
51
-
nC
Qge
Gate-Emitter Charge
VCE=300V
-
2
-
nC
Qgc
Gate-Collector Charge
VGE=5V
-
5.4
-
nC
td(on)
Turn-on Delay Time
VCC=200V
-
5.5
-
ns
tr
Rise Time
IC=40A
-
72
-
ns
td(off)
Turn-off Delay Time
RG=25Ω
-
640
-
ns
tf
Fall Time
VGE=5V
-
2.6
-
us
Cies
Input Capacitance
VGE=0V
-
2095
-
pF
Coes
Output Capacitance
VCE=25V
-
145
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rthj-c
Thermal Resistance Junction-Case
-
-
6
℃/W
Data and specifications subject to change without notice
200124032
AP20G45EH/J
120
160
T C =150 o C
o
T C =25 C
V G =5.0V
V G =5.0V
IC , Collector Current (A)
120
IC , Collector Current (A)
V G =4.5V
V G =4.0V
80
V G =3.0V
V G =2.0V
40
V G =4.5V
80
V G =4.0V
V G =3.0V
40
V G =2.0V
V G =1.0V
V G =1.0V
0
0
0
2
4
6
8
10
12
0
2
Fig 1. Typical Output Characteristics
6
8
10
12
Fig 2. Typical Output Characteristics
12
160
V CE =8V
T C =25 o C
V GE = 4.5 V
T C =70 o C
10
VCE(sat) , Saturation Voltage (V)
T C =100 o C
120
IC , Collector Current (A)
4
V CE , Collector-Emitter Voltage (V)
V CE , Collector Emitter Voltage (V)
T C =150 o C
80
40
I C = 130A
8
I C = 100A
6
I C = 70A
4
I C = 35A
2
0
0
0
1
2
3
4
V GE , Gate- Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
5
6
0
20
40
60
80
100
120
140
160
o
T C , Case Temperature ( C )
Fig 4. Collector- Emitter Saturation Voltage
v.s. Case Temperature
AP20G45EH/J
160
T C = 25 o C
V G =4.5V
ICP , Peak Collector Current (A)
VGE(th) Gate Threshold Voltage (V)
1.5
1
0.5
0
120
80
40
0
-50
0
50
100
150
0
2
T C , Case Temperature ( o C )
4
6
8
V GE , Gate-Emitter Voltage (V)
Fig 5. Gate-Emitter Cut-Off Voltage
Fig 6. Safe Operation Area
v.s. Case Temperature
f=1.0MHz
10000
8
I CP =40A
V CE =300V
VGE , Gate-Emitter Voltage (V)
Capacitance (pF)
Cies
1000
Coes
100
Cres
6
4
2
10
1
8
15
22
29
0
0
V CE , Collector-Emitter Voltage (V)
Fig 7. Collector v.s. Collector-Emitter Voltage
15
30
45
60
Q G , Gate Charge (nC)
Fig 8. Gate Charge Waveform
75
AP20G45EH/J
VCE
R
90%
C
C V
R
G
G
CE
TO THE
OSCILLOSCOPE
VCC=200V
10%
VGE
E
+
5 V
V GE
-
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
V CE
TO THE
OSCILLOSCOPE
C
Flasher
Vtrig
G
+
300V
V
E
CM
RG
_
VCM
GE
+
IGBT
1~3 mA
IG
IC
Fig 11. Gate Charge Test Circuit
VG
VCM = 300V
ICP = 130A
CM = 160uF
VG = 5V
Fig 12. Application Test Circuit