AP20G45EH/J Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Description G * High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications C E VCES 450V ICP 130A TO-252(H) C G G C E TO-251(J) E Absolute Maximum Ratings Parameter Symbol Rating Units Collector-Emitter Voltage 450 V Gate-Emitter Voltage ±6 V Pulsed Gate-Emitter Voltage ±8 V ICP Pulsed Collector Current 130 A PD@TC=25℃ Maximum Power Dissipation 20 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ VCES VGE IGEP Electrical Characteristics@Tj=25oC(unless otherwise specified) Parameter Symbol Min. Typ. Max. Units - - 10 uA IGES Gate-Emitter Leakage Current Test Conditions VGE=6V, VCE=0V ICES Collector-Emitter Leakage Current (Tj=25℃) VCE=450V, VGE=0V - - 10 uA VCE(sat) Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed) - 5 8 V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA - - 1.2 V Qg Total Gate Charge IC=40A - 51 - nC Qge Gate-Emitter Charge VCE=300V - 2 - nC Qgc Gate-Collector Charge VGE=5V - 5.4 - nC td(on) Turn-on Delay Time VCC=200V - 5.5 - ns tr Rise Time IC=40A - 72 - ns td(off) Turn-off Delay Time RG=25Ω - 640 - ns tf Fall Time VGE=5V - 2.6 - us Cies Input Capacitance VGE=0V - 2095 - pF Coes Output Capacitance VCE=25V - 145 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 35 - pF Rthj-c Thermal Resistance Junction-Case - - 6 ℃/W Data and specifications subject to change without notice 200124032 AP20G45EH/J 120 160 T C =150 o C o T C =25 C V G =5.0V V G =5.0V IC , Collector Current (A) 120 IC , Collector Current (A) V G =4.5V V G =4.0V 80 V G =3.0V V G =2.0V 40 V G =4.5V 80 V G =4.0V V G =3.0V 40 V G =2.0V V G =1.0V V G =1.0V 0 0 0 2 4 6 8 10 12 0 2 Fig 1. Typical Output Characteristics 6 8 10 12 Fig 2. Typical Output Characteristics 12 160 V CE =8V T C =25 o C V GE = 4.5 V T C =70 o C 10 VCE(sat) , Saturation Voltage (V) T C =100 o C 120 IC , Collector Current (A) 4 V CE , Collector-Emitter Voltage (V) V CE , Collector Emitter Voltage (V) T C =150 o C 80 40 I C = 130A 8 I C = 100A 6 I C = 70A 4 I C = 35A 2 0 0 0 1 2 3 4 V GE , Gate- Emitter Voltage (V) Fig 3. Collector Current v.s. Gate-Emitter Voltage 5 6 0 20 40 60 80 100 120 140 160 o T C , Case Temperature ( C ) Fig 4. Collector- Emitter Saturation Voltage v.s. Case Temperature AP20G45EH/J 160 T C = 25 o C V G =4.5V ICP , Peak Collector Current (A) VGE(th) Gate Threshold Voltage (V) 1.5 1 0.5 0 120 80 40 0 -50 0 50 100 150 0 2 T C , Case Temperature ( o C ) 4 6 8 V GE , Gate-Emitter Voltage (V) Fig 5. Gate-Emitter Cut-Off Voltage Fig 6. Safe Operation Area v.s. Case Temperature f=1.0MHz 10000 8 I CP =40A V CE =300V VGE , Gate-Emitter Voltage (V) Capacitance (pF) Cies 1000 Coes 100 Cres 6 4 2 10 1 8 15 22 29 0 0 V CE , Collector-Emitter Voltage (V) Fig 7. Collector v.s. Collector-Emitter Voltage 15 30 45 60 Q G , Gate Charge (nC) Fig 8. Gate Charge Waveform 75 AP20G45EH/J VCE R 90% C C V R G G CE TO THE OSCILLOSCOPE VCC=200V 10% VGE E + 5 V V GE - td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform V CE TO THE OSCILLOSCOPE C Flasher Vtrig G + 300V V E CM RG _ VCM GE + IGBT 1~3 mA IG IC Fig 11. Gate Charge Test Circuit VG VCM = 300V ICP = 130A CM = 160uF VG = 5V Fig 12. Application Test Circuit