AP2451GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
2928-8
N-CH BVDSS
20V
RDS(ON)
G2
S2
G1
S1
ID
5A
P-CH BVDSS
Description
-20V
RDS(ON)
75mΩ
ID
-3.7A
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
37mΩ
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
±12
±12
V
Continuous Drain Current
3
5
-3.7
A
Continuous Drain Current
3
4
-3
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200119051
AP2451GY
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=6A
-
-
32
mΩ
VGS=4.5V, ID=5A
-
-
37
mΩ
VGS=2.5V, ID=3A
-
-
55
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=5V, ID=5A
-
13
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V, VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=5A
-
9
15
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=10Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
620
990
pF
Coss
Output Capacitance
VDS=20V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
AP2451GY
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4A
-
-
57
mΩ
VGS=-4.5V, ID=-3A
-
-
75
mΩ
VGS=-2.5V, ID=-1A
-
-
105
mΩ
-0.5
-
-1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-3A
-
10
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V ,VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-3A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=-16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-10V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
26
-
ns
tf
Fall Time
RD=10Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1180
pF
Coss
Output Capacitance
VDS=-20V
-
160
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Gate Resistance
f=1.0MHz
-
6.6
10
Ω
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state.
AP2451GY
N-Channel
20
20
o
T A =25 C
5.0 V
4.5 V
3.5 V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T A = 150 o C
5.0 V
4.5 V
3.5 V
2.5 V
12
8
4
2.5 V
12
8
V G = 1.5 V
4
V G = 1.5 V
0
0
0
1
2
3
0
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D =5A
V G =4.5V
I D =3A
40
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
35
1.4
1.0
30
0.6
25
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
1.5
Normalized VGS(th) (V)
4
IS(A)
3
T j =150 o C
T j =25 o C
2
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j ,Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2451GY
N-Channel
f=1.0MHz
1000
ID=5A
V DS = 16 V
C iss
9
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
100
C rss
3
10
0
0
4
8
12
Q G , Total Gate Charge (nC)
16
1
20
Fig 7. Gate Charge Characteristics
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
100us
ID (A)
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =155o C/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
AP2451GY
P-Channel
20
20
-5.0 V
- 4.5 V
- 3.5 V
-ID , Drain Current (A)
15
-5.0 V
- 4.5 V
- 3.5 V
o
T A = 150 C
16
-ID , Drain Current (A)
o
T A = 25 C
- 2.5 V
10
5
12
- 2.5 V
8
4
V G = - 1.5 V
V G = - 1.5 V
0
0
0
1
2
3
4
0
1
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.5
90
I D = -3 A
V G = -4.5 V
I D = -1 A
o
Normalized R DS(ON)
T A =25 C
RDS(ON) (mΩ )
70
50
1.2
0.9
0.6
30
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.5
Normalized -VGS(th) (V)
3
-IS(A)
2
-V DS , Drain-to-Source Voltage (V)
2
T j =150 o C
T j =25 o C
1
1.1
0.7
0.3
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2451GY
P-Channel
f=1.0MHz
12
1000
I D =-3A
V DS =-16V
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
4
C oss
2
C rss
100
0
0.0
3.0
6.0
9.0
12.0
15.0
18.0
1
21.0
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
-ID (A)
10
Normalized Thermal Response (Rthja)
Duty factor =0.5
100us
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=155oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
T j =150 o C
QG
20
-4.5V
QGS
QGD
10
Charge
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q