A-POWER AP2625GY

AP2625GY
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D2
D1
▼ Low Gate Drive
▼ Surface Mount Package
-30V
RDS(ON)
185mΩ
ID
G2
G1
BVDSS
- 2A
S2
S1
Description
D2
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial applications.
S1
D1
G2
SOT-26
S2
G1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-30
V
±12
V
3
-2.0
A
3
-1.6
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
[email protected]=25℃
Total Power Dissipation
1.2
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
110
℃/W
201023073-1/4
AP2625GY
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-1.6A
-
-
185
mΩ
VGS=-2.5V, ID=-1A
-
-
265
mΩ
-0.3
-
-1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
-
3.3
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-2A
-
4
6
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
265
425
pF
Coss
Output Capacitance
VDS=-25V
-
42
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
32
-
pF
Min.
Typ.
Max.
Units
IS=-1A, VGS=0V
-
-
-1.2
V
IS=-2A, VGS=0V,
-
21
-
ns
dI/dt=100A/µs
-
16
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP2625GY
20
15
T A = 150 o C
- 10 V
-7.0V
-5.0V
-4.5V
15
- 10 V
-7.0V
-5.0V
-4.5V
12
-ID , Drain Current (A)
-ID , Drain Current (A)
T A = 25 o C
10
V G =- 2.5 V
5
9
V G =- 2.5 V
6
3
0
0
0
1
2
3
4
5
6
7
0
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
220
1.6
I D =- 1.6 A
V G = -4.5 V
ID=-1A
T A =25 o C
1.4
Normalized RDS(ON)
200
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
180
160
140
1.2
1.0
0.8
0.6
120
0
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
2.4
2.0
Normalized -VGS(th) (V)
1.4
-IS(A)
1.6
1.2
T j =150 o C
T j =25 o C
0.8
1.0
0.6
0.4
0.2
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2625GY
f=1.0MHz
1000
10
V DS =-24V
I D =-2A
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
4
C oss
C rss
2
0
10
0
2
4
6
8
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
1ms
1
10ms
0.1
100ms
1s
DC
o
T A =25 C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 180℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SOT-26
G
L
L
Millimeters
C
A
SYMBOLS
MIN
NOM
MAX
A
2.70
2.90
3.10
B
2.60
2.80
3.00
C
1.40
1.60
1.80
D
0.30
0.43
0.55
E
0.00
0.05
0.10
B
D
H
1.20REF
G
1.90REF
I
0.12REF
J
0.37REF
L
0.95REF
H
E
I
1.All Dimension Are In Millimeters.
J
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-26
Part Number
Y9XX
Date Code