AP4407GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
BVDSS
RDS(ON)
ID
D
D
D
D
-30V
14mΩ
-10.7A
G
S
SO-8
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
-30
V
± 25
V
-10.7
A
3
-8.6
A
-50
A
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
PD@TA=25℃
Units
3
1
IDM
Rating
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
201125031
AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Parameter
Typ.
-30
-
-
VGS=-10V, ID=-10A
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
2
Max. Units
-0.015
-
V
V/℃
-
-
14
mΩ
VGS=-4.5V, ID=-5A
-
-
20
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-10A
-
13
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
ID=-10.7A
-
29
46
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
Drain-Source Breakdown Voltage
VGS(th)
IDSS
Test Conditions
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
14
-
nC
VDS=-15V
-
15
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
100
-
ns
tf
Fall Time
RD=15Ω
-
70
-
ns
Ciss
Input Capacitance
VGS=0V
-
2600 4100
pF
Coss
Output Capacitance
VDS=-25V
-
500
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
370
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-10.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10.7A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
25
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
AP4407GM
44
40
o
T A =25 C
-10V
-5.0V
-4.5V
-4.0V
36
-ID , Drain Current (A)
32
-10V
-5.0V
-4.5V
-4.0V
32
28
24
20
16
T A =150 o C
36
28
-ID , Drain Current (A)
40
V G =-3.0V
12
24
20
16
12
V G =-3.0V
8
8
4
4
0
0
0
1
2
0
3
1
Fig 1. Typical Output Characteristics
2
2
Fig 2. Typical Output Characteristics
16
1.80
I D =-10A
I D =-10A
V GS = -10V
1.60
o
Normalized R DS(ON)
T A =25 C
14
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
12
1.40
1.20
1.00
0.80
0.60
10
3
5
7
9
-50
11
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
-IS(A)
-VGS(th) (V)
2
T j =150 o C
T j =25 o C
1.00
1
0.10
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4407GM
f=1.0MHz
14
10000
I D =-10.7A
V DS =-24V
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
Coss
4
Crss
2
100
0
0
20
40
60
1
80
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
-ID (A)
1
100ms
0.1
1s
10s
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q