A-POWER AP4500GM

AP4500GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
N-CH BVDSS
D2
20V
RDS(ON)
D2
D1
D1
30mΩ
ID
G2
S2
SO-8
S1
6A
P-CH BVDSS
G1
-20V
50mΩ
RDS(ON)
Description
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-5A
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
20
-20
V
±12
±12
V
3
6
-5
A
3
4.8
-4
A
20
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200609031
AP4500GM
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
20
-
-
V
-
0.037
-
V/℃
VGS=4.5V, ID=6A
-
-
30
mΩ
VGS=2.5V, ID=5.2A
-
-
45
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VDS=10V, ID=6A
-
18.5
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=16V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
ID=6A
-
9
15
nC
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.2
-
nC
VDS=10V
-
29
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
65
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=4.5V
-
60
-
ns
tf
Fall Time
RD=10Ω
-
50
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
480
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
AP4500GM
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Min. Typ. Max. Units
-20
-
-
V
-
-0.037
-
V/℃
VGS=-4.5V, ID=-2.2A
-
-
50
mΩ
VGS=-2.5V, ID=-1.8A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-1
V
VDS=-10V, ID=-2.2A
-
2.5
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
Drain-Source Leakage Current (Tj=25 C)
2
±100 nA
Qg
Total Gate Charge
ID=-5A
-
14
20
nC
Qgs
Gate-Source Charge
VDS=-16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.6
-
nC
VDS=-10V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-2.2A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
58
-
ns
tf
Fall Time
RD=4.5Ω
-
38
-
ns
Ciss
Input Capacitance
VGS=0V
-
940 1500 pF
Coss
Output Capacitance
VDS=-20V
-
400
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=-1.8A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-2.2A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
21
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4500GM
N-Channel
25
25
20
15
10
V GS =2.0V
15
10
V GS =2.0V
5
5
0
0
0
1
2
3
4
0
5
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D =6A
40
I D =6A
V GS =4.5V
1.6
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ )
4.5V
3.5V
3.0V
2.5V
T A =150 o C
4.5V
3.5V
3.0V
2.5V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
20
35
30
1.4
1.2
1.0
25
0.8
20
0.6
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100.00
1.5
10.00
T j =150 o C
1.00
VGS(th) (V)
IS(A)
1
T j =25 o C
0.5
0.10
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4500GM
N-Channel
f=1.0MHz
6
1000
I D =6A
V DS =10V
Ciss
4
C (pF)
VGS , Gate to Source Voltage (V)
5
3
Coss
100
Crss
2
1
0
10
0
2
4
6
8
10
12
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
1ms
ID (A)
13
V DS (V)
10ms
1
100ms
1s
10s
DC
o
0.1
T A =25 C
Single Pulse
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak T j = P DM x R thja + Ta
Rthja =135o C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS (V)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP4500GM
P-Channel
25
25
4.5V
4.0V
3.5V
3.0V
-ID , Drain Current (A)
20
T A =150 o C
15
10
4.5V
4.0V
3.5V
3.0V
20
-ID , Drain Current (A)
T A =25 o C
V GS =2. 5 V
15
V GS =2. 5 V
10
5
5
0
0
0
1
2
3
4
0
5
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D =-2.2A
T A =25 ℃
90
I D =-2.2A
V GS = -4.5V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
80
70
60
50
1.4
1.2
1
0.8
40
0.6
30
2
3
4
-50
5
-V GS (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100.00
1
0.8
T j =150 o C
1.00
-VGS(th) (V)
-IS(A)
10.00
T j =25 o C
0.6
0.4
0.10
0.2
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j ,Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4500GM
P-Channel
f=1.0MHz
10000
I D =-5A
V DS =-16V
5
1000
4
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
6
3
Coss
Crss
100
2
1
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
Normalized Thermal Response (R thja)
Duty Factor = 0.5
1ms
-ID (A)
10ms
1
100ms
1s
0.1
o
10s
DC
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q