A-POWER AP4501SSD

AP4501SSD
Advanced Power
Electronics Corp.
N with Schottky AND P-CHANNEL
ENHANCEMENT MODE POWER MOSFET
D2
▼ Simple Drive Requirement
N-CH BVDSS
D2
D1
▼ Low On-resistance
30V
RDS(ON)
D1
▼ Fast Switching
36mΩ
ID
P-CH BVDSS
G2
PDIP-8
G1
S1/A
5.3A
S2
Description
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-30V
RDS(ON)
60mΩ
ID
-4.2A
K
D1
D2
G1
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
G2
A
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
5.3
-4.2
A
3
4.3
-3.5
A
40
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 125
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200221031
AP4501SSD
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.031
-
V/℃
VGS=10V, ID=5.3A
-
-
36
mΩ
VGS=4.5V, ID=4A
-
-
55
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5.3A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)4
VDS=30V, VGS=0V
-
-
100
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
1
mA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=5.3A
-
8.2
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.8
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5.2
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.8
-
ns
tf
Fall Time
RD=15Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
-
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
1.7
A
IS=1.7A, VGS=0V
-
-
1.2
V
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
IS
Source Current ( Body Diode )
2
Forward On Voltage
VSD
Test Conditions
Max. Units
Schottky [email protected]=25℃
℃
Symbol
Parameter
Test Conditions
Max. Units
VF
Forward Voltage Drop
IF=1A
-
-
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=30V
-
-
100
uA
AP4501SSD
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-4.2A
-
-
60
mΩ
VGS=-4.5V, ID=-3A
-
-
80
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Max. Units
VDS=-10V, ID=-4.2A
-
7.2
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current ( Tj =70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
Drain-Source Leakage Current ( Tj =25 C)
2
Qg
Total Gate Charge
ID=-4.2A
-
9
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=15Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
760
-
pF
Coss
Output Capacitance
VDS=-25V
-
330
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
VD=VG=0V , VS=-1.2V
-
-
-1.7
A
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
2
Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
4.IDSS is the leakage current measurement combined with Schottky diode.
Max. Units
AP4501SSD
N-Channel
36
40
20
10
V GS =4. 0 V
ID , Drain Current (A)
ID , Drain Current (A)
30
0
24
5.0V
12
V GS =4.0V
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
2
3
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2
I D= 5 . 3 A
V GS = 10V
Normalized RDS(ON)
I D =5.3A
T A =25 ℃
70
RDS(ON) (mΩ )
10V
8.0V
6.0V
T A =150 o C
10V
8.0V
6.0V
5.0V
T A =25 o C
40
10
1.4
0.8
0.2
2
5
8
11
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100
2.5
10
2
o
T A =25 C
VGS(th) (V)
IS(A)
T A =150 o C
1
1.5
1
0.1
0.5
0
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501SSD
N-Channel
f=1.0MHz
10000
12
VGS , Gate to Source Voltage (V)
I D =5.3A
V
V
V
DS =16V
DS =20V
1000
Ciss
DS =24V
C (pF)
9
6
Coss
Crss
100
3
10
0
0
4
8
12
1
16
7
13
19
25
31
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty Factor = 0.5
0.2
Normalized Thermal Response (Rthja)
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
10s
DC
o
T A =25 C
Single Pulse
0.1
0.05
0.1
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
o
Rthja =90 C/W
0.001
0.01
0.0001
0.1
1
10
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
RG
VDS
0.8 x RATED VDS
G
S
10V
VGS
+
S
+
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
1000
100
VGS
-
1~ 3 mA
I
G
Fig 11. Switching Time Circuit
I
D
Fig 12. Gate Charge Circuit
AP4501SSD
P-Channel
40
36
-10V
-8.0V
o
T A =25 C
-6.0V
-5.0V
20
-6.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V
-8.0V
T A =150 o C
10
24
-5.0V
12
V GS = - 4. 0 V
V GS = - 4. 0 V
0
0
0
1
2
3
4
0
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
120
I D =-4.2A
T A =25 ℃
I D =-4.2A
V GS = -10V
Normalized RDS(ON)
1.6
90
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
60
1.4
1.2
1
0.8
30
0.6
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100
2.5
10
T A =150 o C
1
-VGS(th) (V)
-IS(A)
2
T A =25 o C
1.5
1
0.1
0.5
0
0.01
0.1
0.4
0.7
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501SSD
P-Channel
12
I D =-4.2A
10
V DS =-10V
V DS =-15V
V DS =-20V
8
1000
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
14
6
Coss
100
Crss
4
2
0
10
0
5
10
15
20
25
30
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor = 0.5
10
-ID (A)
1ms
10ms
1
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
0.2
100us
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90 oC/W
0.001
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
0.0001
0.001
0.01
0.1
1
10
100
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
D
D
VDS
OSCILLOSCOPE
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
0.5 x RATED VDS
RG
G
G
S
VGS
S
-10 V
VGS
-1~-3mA
I
G
Fig 11. Switching Time Circuit
1000
t , Pulse Width (s)
I
D
Fig 12. Gate Charge Circuit