A-POWER AP4511M

AP4511M
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1
D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
SO-8
SO-8
S2
G1 S2
S1 G1
S1
G2
G2
Description
35V
RDS(ON)
25mΩ
ID
P-CH BVDSS
RDS(ON)
ID
7A
-35V
40mΩ
-6.1A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
35
-35
V
±20
±20
V
Continuous Drain Current
3
7
-6.1
A
Continuous Drain Current
3
5.7
-5
A
30
-30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201122041
AP4511M
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
35
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=7A
-
18
25
mΩ
VGS=4.5V, ID=5A
-
29
37
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=7A
-
9
-
S
o
VDS=35V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=28V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=7A
-
11
18
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
AP4511M
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-35
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-6A
-
32
40
mΩ
VGS=-4.5V, ID=-4A
-
50
60
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
9
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-35V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-28V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
VGS(th)
IGSS
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
2
Max. Units
Qg
Total Gate Charge
ID=-6A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=-28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-18V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=18Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.2
7.8
Ω
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
IS=-6A, VGS=0V
-
20
-
ns
dI/dt=-100A/µs
-
12
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
AP4511M
N-Channel
50
50
T A = 25 o C
10V
7.0V
5.0V
40
10V
7.0V
T A = 150 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
30
20
V G =3.0V
10
30
20
V G =3.0V
10
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
1.8
40
ID=5A
ID=7A
V G =10V
1.6
T A =25 o C
Normalized RDS(ON)
35
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
30
1.4
1.2
1.0
25
0.8
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
6
5
Normalized VGS(th) (V)
1.3
IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.1
0.9
0.7
1
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4511M
N-Channel
f=1.0MHz
1000
14
10
C oss
8
C (pF)
VGS , Gate to Source Voltage (V)
C iss
I D =7A
V DS =28V
12
6
C rss
100
4
2
0
10
0
5
10
15
20
25
1
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10us
10
ID (A)
13
1ms
10ms
1
100ms
o
T A =25 C
Single Pulse
0.1
Duty factor=0.5
02
01
0.1
0 05
0 02
0 01
PDM
t
0.01
Si
T
Duty factor = t/T
Peak T j = P DM x R thja + Ta
Rthja =135o C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
AP4511M
P-Channel
50
50
-10V
7 0V
o
T A = 25 C
T A = 150 C
40
30
20
V
3 0V
-ID , Drain Current (A)
40
-ID , Drain Current (A)
-10V
-7.0V
o
30
20
V
10
10
3 0V
0
0
0
1
2
3
4
0
5
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
60
I D = -4 A
55
I D =-6A
V G =-10V
o
T A =25 C
Normalized R DS(ON)
1.2
RDS(ON) (mΩ )
50
45
40
1.0
0.8
35
0.6
30
-50
3
5
7
9
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
6
Normalized -VGS(th) (V)
5
4
-IS(A)
0
11
T j =150 o C
3
T j =25 o C
2
1.3
1.1
0.9
0.7
1
0.5
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4511M
P-Channel
f=1.0MHz
10000
14
I D = -6 A
V DS = - 28V
10
C (pF)
-VGS , Gate to Source Voltage (V)
12
8
C iss
1000
6
4
C oss
2
C rss
0
100
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
T =25 o C
1s
0.1
DC
0.1
P DM
0.01
t
T
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=135oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
T j =150 o C
QG
20
-4.5V
QGS
QGD
10
Charge
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q