A-POWER AP4525GEH-A

AP4525GEH-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
40V
RDS(ON)
▼ Good Thermal Performance
▼ Fast Switching Performance
S1
26mΩ
ID
G1
S2
8.3A
P-CH BVDSS
G2
-40V
RDS(ON)
TO-252-4L
40mΩ
ID
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-7A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
40
-40
V
±16
±16
V
Continuous Drain Current
3
8.3
-7.0
A
Continuous Drain Current
3
6.6
-5.6
A
50
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3.125
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Unit
Max.
8
℃/W
Max.
40
℃/W
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200627071-1/7
AP4525GEH-A
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=6A
-
-
26
mΩ
VGS=4.5V, ID=4A
-
-
32
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=6A
-
9
14
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=6A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=3.3Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=15A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2/7
AP4525GEH-A
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-5A
-
-
40
mΩ
VGS=-4.5V, ID=-3A
-
-
60
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
-
5
-
S
o
VDS=-40V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=-5A
-
9
24
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
8.5
-
ns
tr
Rise Time
ID=-5A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=4Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
760
1220
pF
Coss
Output Capacitance
VDS=-25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4525GEH-A
N-Channel
50
50
40
30
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
120
ID=6A
V G =10V
ID=4A
T C =25 o C
Normalized RDS(ON)
100
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
T C = 150 C
ID , Drain Current (A)
40
ID , Drain Current (A)
o
10V
7.0V
5.0V
4.5V
o
T C = 25 C
80
60
1.4
1.0
40
0.6
20
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
14
1.6
Normalized VGS(th) (V)
12
10
IS(A)
T j =150 o C
T j =25 o C
8
6
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4525GEH-A
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =20V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
10ms
100ms
1s
1
o
0.1
T A =25 C
Single Pulse
10s
0.01
Normalized Thermal Response (R thja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=75℃/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4525GEH-A
P-Channel
50
50
40
30
V G = - 3.0V
20
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-10V
-7.0V
-5.0V
-4.5V
T C = 150 o C
-10V
-7.0V
-5.0V
-4.5V
o
T C = 25 C
30
20
V G = - 3.0V
10
10
0
0
0
1
2
3
4
5
0
6
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
200
I D = -3 A
I D = -5A
V G = -10V
T C =25 o C
170
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
140
110
80
1.2
1.0
50
0.8
20
2
4
6
8
25
10
-V GS ,Gate-to-Source Voltage (V)
50
75
100
125
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
14
1.6
Normalized -VGS(th) (V)
12
10
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4525GEH-A
P-Channel
f=1.0MHz
10000
I D = -5 A
V DS = - 2 0 V
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
4
C oss
C rss
100
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
-ID (A)
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10ms
100ms
1s
1
o
0.1
10s
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =-5V
-ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
30
-4.5V
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252(4L)
A
Millimeters
SYMBOLS
B
MIN
NOM
MAX
A
6.40
6.6
6.80
B
5.2
5.35
5.50
C
9.40
9.80
10.20
D
2.40
2.70
3.00
1.27 REF.
P
S
E3
C
M
R
D
S
P
0.50
0.65
0.80
E3
3.50
4.00
4.50
R
0.80
1.00
1.20
G
0.40
0.50
0.60
H
2.20
2.30
2.40
J
0.45
0.50
0.55
K
0.00
0.075
0.15
L
0.90
1.20
1.50
M
5.40
5.60
5.80
1.All Dimensions Are in Millimeters.
G
2.Dimension Does Not Include Mold Protrusions.
H
K
J
L
Part Marking Information & Packing : TO-252(4L)
Part Number
Package Code
meet Rohs requirement
XXXXGEH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence